VISHAY
1N4150
Vishay Semiconductors
Fast Switching Diode
Features
• Silicon Epitaxial Planar Diode
• Low forward voltage drop
• High forward current capability
Applications
High speed switch and general purpose use in com-
puter and industrial applications
94 9367
Mechanical Data
Case:
DO-35 Glass Case
Weight:
approx. 300 mg
Packaging Codes/Options:
D3/10 K per 13" reel (8 mm tape), 30 K/box
D4/3 K per 7" reel (8 mm tape), 30 K/box
Parts Table
Part
1N4150
Type differentiation
Single Diodes
Ordering code
Remarks
DO35
Package
1N4150-TAP / 1N4150-TR Ammopack / Tape and
Reel
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Average peak forward current
Forward current
Average forward current
Power dissipation
V
R
= 0
V
R
= 0
l = 4 mm, T
L
= 45 °C
l = 4 mm, T
L
≤
25 °C
t
p
= 1 µs
Test condition
Sub type
Symbol
V
RRM
V
R
I
FSM
I
FRM
I
F
I
FAv
P
V
P
V
Value
50
50
4
600
300
150
440
500
Unit
V
V
A
mA
mA
mA
mW
mW
Maximum Thermal Resistance
T
amb
= 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Test condition
l = 4 mm, T
L
= constant
Symbol
R
thJA
T
j
T
stg
Value
350
175
- 65 to + 175
Unit
K/W
°C
°C
Document Number 85522
Rev. 5, 21-Nov-02
www.vishay.com
1
1N4150
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further
notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85522
Rev. 5, 21-Nov-02
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