WMS128K8-XXX
HI-RELIABILITY PRODUCT
128Kx8 MONOLITHIC SRAM, SMD 5962-96691
(pending)
FEATURES
s
Access Times 70, 85, 100, 120ns
s
Revolutionary, Center Power/Ground Pinout
JEDEC Approved
• 32 lead Ceramic SOJ (Package 101)
s
Evolutionary, Corner Power/Ground Pinout
JEDEC Approved
• 32 pin Ceramic DIP (Package 300)
• 32 lead Ceramic SOJ (Package 101)
• 32 lead Ceramic Flat Pack (Package 206)
s
MIL-STD-883 Compliant Devices Available
s
Commercial, Industrial and Military Temperature Range
s
5 Volt Power Supply
s
Low Power CMOS
s
2V Data Retention Devices Available
(Low Power Version)
s
TTL Compatible Inputs and Outputs
REVOLUTIONARY PINOUT
32 CSOJ (DR)
EVOLUTIONARY PINOUT
32 DIP
32 CSOJ (DE)
32 FLATPACK (FE)
TOP VIEW
A0
A1
A2
A3
CS
I/O1
I/O2
V
CC
GND
I/O3
I/O4
WE
A4
A5
A6
A7
TOP VIEW
A16
A15
A14
A13
OE
I/O8
I/O7
GND
V
CC
I/O6
I/O5
A12
A11
A10
A9
A8
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
NC/CS2*
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
* NC for single chip select devices
CS
2
for dual chip select devices
PIN DESCRIPTION
A
0-16
I/O
0-7
CS
OE
WE
V
CC
GND
Address Inputs
Data Input/Output
Chip Select
Output Enable
Write Enable
+5.0V Power
Ground
February 2000 Rev. 2
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating T emperatur e
Storage T emperatur e
Signal V oltage Relative to GND
Symbol
T
A
T
STG
V
G
T
J
V
CC
-0.5
Min
-55
-65
-0.5
Max
+125
+150
Vcc+0.5
150
7.0
Unit
°C
°C
V
°C
V
CS
H
L
L
L
OE
X
L
H
X
WE
X
H
H
L
TRUTH TABLE
Mode
Standby
Read
Out Disable
Write
Data I/O
High Z
Data Out
High Z
Data In
Power
Standby
Active
Active
Active
2
SRAM MONOLITHICS
Junction T emperatur e
Supply V oltage
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply V oltage
Input High V oltage
Input Low V oltage
Symbol
V
CC
V
IH
V
IL
Min
4.5
2.2
-0.5
Max
5.5
V
CC
+ 0.3
+0.8
Unit
V
V
V
CAPACITANCE
(T
A
= +25°C)
Parameter
Input capacitance
Symbol
C
IN
Condition
V
IN
= 0V, f = 1.0MHz
Package
32 Pin CSOJ, DIP,
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
Outputcapicitance
C
OUT
V
OUT
= 0V, f = 1.0MHz
32 Pin CSOJ, DIP,
Flat Pack Evolutionary
32 Pin CSOJ Revolutionary
This parameter is guaranteed by design but not tested.
Speed (ns)
70 to 120
70 to 120
70 to 120
70 to 120
Max
12
20
12
20
Unit
pF
pF
pF
pF
DC CHARACTERISTICS
(V
CC
= 5.0V, GND = 0V, T
A
= -55°C to +125°C)
Parameter
Input Leakage Current
Output Leakage Current
Operating Supply Current
Standby Current
Output Low Voltage
Output High Voltage
NOTE: DC test conditions: V
Sym
I
LI
I
LO
I
CC
I
SB
V
OL
V
OH
Conditions
Min
V
CC
= 5.5, V
IN
= GND to V
CS = V
IH
, OE = V
CS = V
IL
, OE = V
CS = V
IH
, OE = V
IH
, V
OUT
CC
-70
Max
10
10
30
1.0
0.4
2.4
-85
Min
Max
10
10
30
1.0
0.4
2.4
Min
-100
Max
10
10
30
0.6
0.4
Min
-120
Max
10
10
30
0.6
0.4
Units
µA
µA
mA
mA
V
V
= GND to V
CC
IH
, f = 5MHz, Vcc = 5.5
IH
, f = 5MHz, Vcc = 5.5
I
OL
= 2.1mA, Vcc = 4.5
I
OH
= -1.0mA, Vcc = 4.5
2.4
2.4
IH
= V
CC
-0.3V, V
IL
= 0.3V
DATA RETENTION CHARACTERISTICS
(T
A
= -55°C to +125°C)
Parameter
DataRetention
Supply Voltage
DataRetention
Current
Symbol
Conditions
Min
V
DR
I
CCDR1
CS
≥
V
CC
-0.2V
V
CC
= 3V
2.0
20
-70
Typ
Max
5.5
400
Min
2.0
20
-85
Typ
Max
5.5
400
Min
2.0
20
-100
Typ
Max
5.5
400
Min
2.0
20
-120
Typ
Units
Max
5.5
400
V
µA
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
2
WMS128K8-XXX
AC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55°C To +125°C)
Parameter
Read Cycle
Read Cycle Time
Address Access Time
Output Hold from Address Change
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
t
RC
t
AA
t
OH
t
ACS
t
OE
t
CLZ
1
t
OLZ
1
t
CHZ
1
t
OHZ
1
5
5
25
25
3
70
35
5
5
25
25
Symbol
Min
70
70
3
85
45
5
5
35
35
-70
Max
Min
85
85
3
100
50
5
5
35
35
-85
Max
Min
100
100
3
120
60
-100
Max
Min
120
120
-120
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
2
SRAM MONOLITHICS
1. This parameter is guaranteed by design but not tested.
AC CHARACTERISTICS
(V
CC
= 5.0V, T
A
= -55°C To +125°C)
Parameter
Write Cycle
Write Cycle Time
Chip Select to End of Write
Address Valid to End of Write
Data Valid to End of Write
Write Pulse Width
Address Setup Time
Address Hold Time
Output Active from End of Write
Write Enable to Output in High Z
Data Hold Time
t
WC
t
CW
t
AW
t
DW
t
WP
t
AS
t
AH
t
OW
1
t
WHZ
t
DH
1
Symbol
Min
70
60
60
30
50
0
5
5
-70
Max
Min
85
75
75
35
55
0
5
5
25
0
0
-85
Max
Min
100
80
80
40
70
0
5
5
30
0
-100
Max
Min
120
100
100
50
80
0
5
5
35
0
-120
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
35
ns
ns
1. This parameter is guaranteed by design but not tested.
AC TEST CIRCUIT
I
OL
Current Source
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Typ
V
IL
= 0, V
5
1.5
1.5
IH
= 3.0
Unit
V
ns
V
V
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
Output Timing Reference Level
(Bipolar Supply)
I
OH
Current Source
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z
0
= 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
3
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WMS128K8-XXX
TIMING WAVEFORM - READ CYCLE
t
RC
ADDRESS
t
AA
2
SRAM MONOLITHICS
CS
t
RC
ADDRESS
t
ACS
t
CLZ
OE
t
CHZ
t
AA
t
OH
DATA I/O
PREVIOUS DATA VALID
DATA VALID
t
OE
t
OLZ
DATA I/O
HIGH IMPEDANCE
t
OHZ
DATA VALID
READ CYCLE 1 (CS = OE = V
IL
, WE = V
IH
)
READ CYCLE 2 (WE = V
IH
)
WRITE CYCLE - WE CONTROLLED
t
WC
ADDRESS
t
AW
t
CW
CS
t
AH
t
AS
WE
t
WP
t
OW
t
WHZ
t
DW
t
DH
DATA I/O
DATA VALID
WRITE CYCLE 1, WE CONTROLLED
WRITE CYCLE - CS CONTROLLED
t
WC
ADDRESS
WS32K32-XHX
t
AS
t
AW
t
CW
t
AH
CS
t
WP
WE
t
DW
DATA I/O
DATA VALID
t
DH
WRITE CYCLE 2, CS CONTROLLED
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
4
WMS128K8-XXX
PACKAGE 101:
32 LEAD, CERAMIC SOJ
21.1 (0.830)
±
0.25 (0.010)
0.2 (0.008)
±
0.05 (0.002)
3.96 (0.156) MAX
0.89 (0.035)
Radius TYP
2
9.55 (0.376)
±
0.25 (0.010)
11.23 (0.442)
±
0.30 (0.012)
SRAM MONOLITHICS
1.27 (0.050)
±
0.25 (0.010)
PIN 1 IDENTIFIER
1.27 (0.050) TYP
19.1 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
PACKAGE 206:
32 LEAD, CERAMIC FLAT PACK
20.83 (0.820)
±
0.25 (0.010)
3.18 (0.125) MAX
PIN 1
IDENTIFIER
10.41 (0.410)
±
0.13 (0.005)
7.87 (0.310)
±
0.13 (0.005)
6.35 (0.250)
MIN
0.43 (0.017)
±
0.05 (0.002)
0.127 (0.005)
+ 0.05 (0.002)
– 0.025 (0.001)
1.27 (0.050) TYP
19.05 (0.750) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
