STL20NF06LAG
Automotive-grade N-channel 60 V, 27 mΩ typ., 20 A STripFET™ II
Power MOSFET in a PowerFLAT™ 5x6 package
Datasheet - production data
Features
Order code
STL20NF06LAG
V
DS
60 V
R
DS(on)
max.
40 mΩ
I
D
20 A
P
TOT
75 W
Designed for Automotive applications and
AEC-Q101 qualified
PowerFLAT™ 5x6 with wettable flanks
Logic level V
GS(th)
Maximum junction temperature: T
J
= 175 °C
Applications
Figure 1: Internal schematic diagram
D(5, 6, 7, 8)
8
5
Switching applications
7
6
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
is specifically designed to minimize input
capacitance and gate charge. It is therefore ideal
as a primary switch in advanced high-efficiency
isolated DC-DC converters for Telecom and
Computer applications. It is also suitable for any
application with low gate charge drive
requirements.
G(4)
1
S(1, 2, 3)
2
3
4
Top View
Table 1: Device summary
Order code
STL20NF06LAG
Marking
20NF06L
Package
PowerFLAT™ 5x6
Packing
Tape and reel
September 2015
DocID028240 Rev 1
1/14
www.st.com
This is information on a product in full production.
Contents
STL20NF06LAG
Contents
1
2
3
4
Electrical ratings ............................................................................. 3
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
Test circuits ..................................................................................... 8
Package information ....................................................................... 9
4.1
4.2
PowerFLAT™ 5x6 WF type R package information .......................... 9
PowerFLAT™ 5x6 WF packing information .................................... 11
5
Revision history ............................................................................ 13
2/14
DocID028240 Rev 1
STL20NF06LAG
Electrical ratings
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
V
DS
V
GS
I
D
(1)(2)
I
DM
(1)(3)
I
D
(4)
I
DM
P
TOT
P
TOT
T
stg
T
j
Notes:
(1)
This
Parameter
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
case
= 25 °C
Drain current (continuous) at T
case
= 100 °C
Drain current (pulsed)
Drain current (continuous) at T
pcb
= 25 °C
Drain current (continuous) at T
pcb
= 100 °C
Drain current (pulsed)
Total dissipation at T
case
= 25 °C
Total dissipation at T
pcb
= 25 °C
Storage temperature
Operating junction temperature
Value
60
±20
20
20
80
7.4
5.2
29.6
75
4.8
-55 to 175
Unit
V
V
A
A
A
A
W
°C
value is rated according to R
thj-c
.
limited by package.
(2)
Current
(3)
(4)
Pulse width is limited by safe operating area.
This value is rated according to R
thj-pcb
.
Table 3: Thermal data
Symbol
R
thj-case
R
thj-pcb
(1)
Notes:
(1)
Parameter
Thermal resistance junction-case
Thermal resistance junction-pcb
Value
2.0
31.3
Unit
°C/W
When mounted on a 1-inch² FR-4, 2 Oz copper board, t < 10 s.
Table 4: Avalanche characteristics
Symbol
I
AV
E
AS
(1)
Notes:
(1)
Parameter
Avalanche current, not repetitive
Single pulse avalanche energy
Value
7.4
210
Unit
A
mJ
starting T
j
= 25 °C, I
D
= I
AV
.
DocID028240 Rev 1
3/14
Electrical characteristics
STL20NF06LAG
2
Electrical characteristics
(T
case
= 25 °C unless otherwise specified)
Table 5: Static
Symbol
V
(BR)DSS
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current
Gate-body leakage current
Gate threshold voltage
Static drain-source on-
resistance
Test conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, V
DS
= 60 V
V
GS
= 0 V, V
DS
= 60 V,
T
C
= 125 °C
V
DS
= 0 V, V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 4 A
V
GS
= 5 V, I
D
= 4 A
Table 6: Dynamic
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 25 V, I
D
= 7.4 A,
V
GS
= 10 V (see
Figure 15:
"Gate charge test circuit")
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0 V
Test conditions
Min.
-
-
-
-
-
-
Typ.
670
170
56
22.5
2.5
7
Max.
-
-
-
-
-
-
nC
pF
Unit
1
27
32
Min.
60
1
100
±100
2.5
40
50
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 7: Switching times
Symbol
t
d(on)
t
r
t
d(off)
t
f
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 30 V, I
D
= 3.7 A
R
G
= 4.7 Ω, V
GS
= 10 V
(see
Figure 14: "Switching
times test circuit for
resistive load"
and
Figure
19: "Switching time
waveform")
Min.
-
-
-
-
Typ.
7
15.4
36.8
7.7
Max.
-
-
-
-
ns
Unit
4/14
DocID028240 Rev 1
STL20NF06LAG
Table 8: Source-drain diode
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Notes:
(1)
(2)
Electrical characteristics
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
V
GS
= 0 V, I
SD
= 7.4 A
I
SD
= 7.4 A,
di/dt = 100 A/µs, V
DD
= 48 V
(see
Figure 16: "Test circuit
for inductive load switching
and diode recovery times")
Test conditions
Min.
-
-
-
-
-
-
28
31.6
2.26
Typ.
Max.
7.4
29.6
1.5
Unit
A
A
V
ns
nC
A
Pulse width is limited by safe operating area.
Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028240 Rev 1
5/14
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