Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
−
Junction−to−Case
Thermal Resistance
−
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Value
2.0
62.5
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current, (V
D
= Rated V
DRM
, V
RRM
; Gate Open) T
J
= 25°C
T
J
= 110°C
ON CHARACTERISTICS
Peak On-State Voltage, (I
TM
=
"11
A Peak, Pulse Width
v
2 ms, Duty Cycle
v
2%)
Gate Trigger Current (Continuous DC), (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
Gate Trigger Voltage (Continuous DC), (V
D
= 12 V, R
L
= 100
W)
MT2(+), G(+); MT2(+), G(−); MT2(−), G(−)
MT2(−), G(+)
Gate Non−Trigger Voltage (Continuous DC), (V
D
= 12 V, T
C
= 110°C, R
L
= 100
W)
All Four Quadrants
Holding Current, (V
D
= 12 Vdc, Initiating Current =
"200
mA, Gate Open)
Gate−Controlled Turn−On Time, (V
D
= Rated V
DRM
, I
TM
= 16 A Peak, I
G
= 30 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off-State Voltage,
(V
D
= Rated V
DRM
, Exponential Waveform, T
C
= 110°C)
Critical Rate of Rise of Commutation Voltage, (V
D
= Rated V
DRM
, I
TM
= 11.3 A,
Commutating di/dt = 4.1 A/ms, Gate Unenergized, T
C
= 80°C)
dv/dt
dv/dt(c)
−
−
25
5.0
−
−
V/ms
V/ms
V
TM
I
GT
−
−
−
−
−
0.2
−
−
−
−
−
−
−
−
−
1.5
1.8
5.0
10
2.0
2.5
−
15
−
V
mA
I
DRM
,
I
RRM
−
−
−
−
10
2.0
mA
mA
Symbol
Min
Typ
Max
Unit
V
GT
V
V
GD
I
H
t
gt
V
mA
ms
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2
MAC228A Series
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC228A Series
110
P(AV), AVERAGE POWER (WATTS)
TC , CASE TEMPERATURE (
°
C)
a
= 30°
60°
90°
98
120°
180°
92
a
a
= CONDUCTION ANGLE
80
0
1.0
2.0
3.0
4.0
5.0
dc
a
10
a
8.0
a
a
= CONDUCTION ANGLE
T
J
≈
110°C
4.0
60°
30°
90°
a
= 180°
120°
dc
104
6.0
86
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
6.0
7.0
8.0
I
T(RMS)
, RMS ON-STATE CURRENT (AMP)
Figure 1. RMS Current Derating
Figure 2. On−State Power Dissipation
ORDERING INFORMATION
Device
MAC228A4
MAC228A4G
MAC228A6
MAC228A6G
MAC228A6T
MAC228A6TG
MAC228A8
MAC228A8G
MAC228A8T
MAC228A8TG
MAC228A10
MAC228A10G
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
Shipping
†
500 Units / Bulk
500 Units / Bulk
500 Units / Bulk
500 Units / Bulk
50 Units / Rail
50 Units / Rail
500 Units / Bulk
500 Units / Bulk
50 Units / Rail
50 Units / Rail
500 Units / Bulk
500 Units / Bulk
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MAC228A Series
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.036
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.91
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
−T−
B
4
SEATING
PLANE
F
T
C
S
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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