Freescale Semiconductor
Technical Data
MRF1518
Rev. 6, 3/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 520 MHz. The high gain and broadband performance of this device
make it ideal for large- signal, common source amplifier applications in 12.5 volt
mobile FM equipment.
•
Specified Performance @ 520 MHz, 12.5 Volts
Output Power — 8 Watts
D
Power Gain — 11 dB
Efficiency — 55%
•
Capable of Handling 20:1 VSWR, @ 15.5 Vdc,
520 MHz, 2 dB Overdrive
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal
Impedance Parameters
G
•
RF Power Plastic Surface Mount Package
•
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
•
N Suffix Indicates Lead - Free Terminations
S
•
Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm,
7 Inch Reel.
MRF1518NT1
MRF1518T1
520 MHz, 8 W, 12.5 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
C
= 25°C
(1)
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
- 0.5, +40
±
20
4
62.5
0.50
- 65 to +150
150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
1. Calculated based on the formula P
D
=
TJ – TC
R
θJC
Rating
1
Package Peak Temperature
260
Unit
°C
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF1518NT1 MRF1518T1
1
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Current
(V
DS
= 40 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 12.5 Vdc, I
D
= 100
µA)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 12.5 Vdc, V
GS
= 0, f = 1 MHz)
Functional Tests
(In Freescale Test Fixture)
Common- Source Amplifier Power Gain
(V
DD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
Drain Efficiency
(V
DD
= 12.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
G
ps
η
10
50
11
55
—
—
dB
%
C
iss
C
oss
C
rss
—
—
—
66
33
4.5
—
—
—
pF
pF
pF
V
GS(th)
V
DS(on)
1.0
—
1.6
0.4
2.1
—
Vdc
Vdc
I
DSS
I
GSS
—
—
—
—
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
MRF1518NT1 MRF1518T1
2
RF Device Data
Freescale Semiconductor
V
GG
C8
C7
B2
+
C6
R4
B1
R3
C16
C15
C14
+
V
DD
C13
L1
C5
R2
Z6
R1
N1
RF
INPUT
C1
C2
C3
C4
Z1
Z2
Z3
Z4
Z5
DUT
C9
C10
C11
C12
Z7
Z8
Z9
Z10
N2
RF
OUTPUT
B1, B2
C1, C12
C2, C3, C10, C11
C4
C5, C16
C6, C13
C7, C14
C8, C15
C9
L1
N1, N2
R1
R2
R3
Short Ferrite Beads, Fair Rite Products
(2743021446)
240 pF, 100 mil Chip Capacitors
0 to 20 pF Trimmer Capacitors
82 pF, 100 mil Chip Capacitor
120 pF, 100 mil Chip Capacitors
10
µF,
50 V Electrolytic Capacitors
1,200 pF, 100 mil Chip Capacitors
0.1
mF,
100 mil Chip Capacitors
30 pF, 100 mil Chip Capacitor
55.5 nH, 5 Turn, Coilcraft
Type N Flange Mounts
15
Ω
Chip Resistor (0805)
51
Ω,
1/2 W Resistor
10
Ω
Chip Resistor (0805)
R4
Z1
Z2
Z3
Z4
Z5, Z6
Z7
Z8
Z9
Z10
Board
33 kΩ, 1/8 W Resistor
0.451″ x 0.080″ Microstrip
1.005″ x 0.080″ Microstrip
0.020″ x 0.080″ Microstrip
0.155″ x 0.080″ Microstrip
0.260″ x 0.223″ Microstrip
0.065″ x 0.080″ Microstrip
0.266″ x 0.080″ Microstrip
1.113″ x 0.080″ Microstrip
0.433″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 1. 450 - 520 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 450 - 520 MHz
12
Pout , OUTPUT POWER (WATTS)
10
470 MHz
8
500 MHz
6
520 MHz
4
2
V
DD
= 12.5 Vdc
0
0
0.1
0.3
0.2
0.4
P
in
, INPUT POWER (WATTS)
0.5
0.6
−20
0
1
2
4
5
6
7
8
3
P
out
, OUTPUT POWER (WATTS)
9
10
11
450 MHz
0
V
DD
= 12.5 Vdc
IRL, INPUT RETURN LOSS (dB)
−5
470 MHz
−10
450 MHz
−15
520 MHz
500 MHz
Figure 2. Output Power versus Input Power
Figure 3. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
3
TYPICAL CHARACTERISTICS, 450 - 520 MHz
17
450 MHz
15
Eff, DRAIN EFFICIENCY (%)
13
GAIN (dB)
11
9
7
V
DD
= 12.5 Vdc
5
0
1
2
3
4
5
6
7
8
P
out
, OUTPUT POWER (WATTS)
9
10
11
520 MHz
500 MHz
470 MHz
80
70
60
50
520 MHz
40
500 MHz
30
20
V
DD
= 12.5 Vdc
10
0
0
1
2
3
4
5
6
7
8
9
P
out
, OUTPUT POWER (WATTS)
10
11
12
450 MHz
470 MHz
Figure 4. Gain versus Output Power
Figure 5. Drain Efficiency versus Output Power
12
Pout , OUTPUT POWER (WATTS)
10 470 MHz
450 MHz
8
520 MHz
6 500 MHz
4
2
0
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
V
DD
= 12.5 Vdc
P
in
= 26.2 dBm
70
65
Eff, DRAIN EFFICIENCY (%)
60
55
50
45
40
35
30
0
200
400
600
I
DQ
, BIASING CURRENT (mA)
800
1000
V
DD
= 12.5 Vdc
P
in
= 26.2 dBm
470 MHz
450 MHz
500 MHz
520 MHz
Figure 6. Output Power versus Biasing Current
Figure 7. Drain Efficiency versus
Biasing Current
12
Pout , OUTPUT POWER (WATTS)
11
10
9
8
7
6
5
4
3
2
8
9
10
11
12
13
500 MHz
I
DQ
= 150 mA
P
in
= 26.2 dBm
14
15
16
520 MHz
470 MHz
450 MHz
Eff, DRAIN EFFICIENCY (%)
80
75
70
65
60
55
50
45
40
35
30
8
9
10
11
12
13
I
DQ
= 150 mA
P
in
= 26.2 dBm
14
15
16
520 MHz
500 MHz
450 MHz
470 MHz
V
DD
, SUPPLY VOLTAGE (VOLTS)
V
DD
, SUPPLY VOLTAGE (VOLTS)
Figure 8. Output Power versus Supply Voltage
Figure 9. Drain Efficiency versus Supply Voltage
MRF1518NT1 MRF1518T1
4
RF Device Data
Freescale Semiconductor
B1
V
GG
+
C8
C7
C6
C5
L1
R1
N1
RF
INPUT
L2
C1
C2
C3
C4
C9
C10
Z1
Z2
Z3
Z4
DUT
Z5
Z6
Z7
C12
B2
C13
C14
+
C15
V
DD
Z8
C11
N2
RF
OUTPUT
B1, B2
C1, C9
C2
C3, C4
C5
C6, C13
C7, C14
C8
C10
C11, C12
C15
L1, L2
Long Ferrite Beads, Fair Rite Products
12 pF, 100 mil Chip Capacitors
6.8 pF, 100 mil Chip Capacitor
20 pF, 100 mil Chip Capacitors
51 pF, 100 mil Chip Capacitor
1000 pF, 100 mil Chip Capacitors
0.039
µF,
100 mil Chip Capacitors
1
µF,
20 V Tantalum Chip Capacitor
3 pF, 100 mil Chip Capacitor
51 pF, 100 mil Chip Capacitors
22
µF,
35 V Tantalum Chip Capacitor
18.5 nH, 5 Turn, Coilcraft
N1, N2
R1
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Board
Type N Flange Mounts
47
Ω
Chip Resistor (0805)
1.145″ x 0.080″ Microstrip
0.786″ x 0.080″ Microstrip
0.115″ x 0.223″ Microstrip
0.145″ x 0.223″ Microstrip
0.260″ x 0.223″ Microstrip
0.081″ x 0.080″ Microstrip
0.104″ x 0.080″ Microstrip
1.759″ x 0.080″ Microstrip
Glass Teflon
, 31 mils, 2 oz. Copper
Figure 10. 820 - 850 MHz Broadband Test Circuit
TYPICAL CHARACTERISTICS, 820 - 850 MHz
12
Pout , OUTPUT POWER (WATTS)
10
8
6
4
2
V
DD
= 12.5 Vdc
0
0
0.1
0.2
0.4
0.3
P
in
, INPUT POWER (WATTS)
0.5
0.6
−40
1
2
3
5
7
8
9
4
6
P
out
, OUTPUT POWER (WATTS)
10
11
12
840 MHz
830 MHz
820 MHz
850 MHz
0
V
DD
= 12.5 Vdc
IRL, INPUT RETURN LOSS (dB)
−10
850 MHz
840 MHz
820 MHz
−20
−30
830 MHz
Figure 11. Output Power versus Input Power
Figure 12. Input Return Loss
versus Output Power
MRF1518NT1 MRF1518T1
RF Device Data
Freescale Semiconductor
5
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