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IS61WV102416ALL-20MI

产品描述SRAM 16M (1Mx16) 20ns Async SRAM
产品类别存储   
文件大小242KB,共20页
制造商ISSI(芯成半导体)
官网地址http://www.issi.com/
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IS61WV102416ALL-20MI概述

SRAM 16M (1Mx16) 20ns Async SRAM

IS61WV102416ALL-20MI规格参数

参数名称属性值
Product AttributeAttribute Value
制造商
Manufacturer
ISSI(芯成半导体)
产品种类
Product Category
SRAM
RoHSN
Memory Size16 Mbit
Organization1 M x 16
Access Time20 ns
接口类型
Interface Type
Parallel
电源电压-最大
Supply Voltage - Max
2.2 V
电源电压-最小
Supply Voltage - Min
1.65 V
Supply Current - Max60 mA
最小工作温度
Minimum Operating Temperature
- 40 C
最大工作温度
Maximum Operating Temperature
+ 85 C
安装风格
Mounting Style
SMD/SMT
封装 / 箱体
Package / Case
BGA-48
系列
Packaging
Tray
Memory TypeSDR
类型
Type
Asynchronous
Moisture SensitiveYes
工厂包装数量
Factory Pack Quantity
220

文档预览

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IS61WV102416ALL
IS61WV102416BLL
IS64WV102416BLL
1M x 16  HIGH-SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH 3.3V SUPPLY
FEATURES
• High-speed access times:
8, 10, 20 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for greater
noise immunity
• Easy memory expansion with CE and OE op-
tions
CE power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single power supply
V
dd
1.65V to 2.2V (IS61WV102416ALL)
speed = 20ns for V
dd
1.65V to 2.2V
V
dd
2.4V to 3.6V (IS61/64WV102416BLL)
speed = 10ns for V
dd
2.4V to 3.6V
speed = 8ns for V
dd
3.3V + 5%
• Packages available:
– 48-ball miniBGA (9mm x 11mm)
– 48-pin TSOP (Type I)
• Industrial and Automotive Temperature Support
• Lead-free available
• Data control for upper and lower bytes
MAY 2012
are high-speed, 16M-bit static RAMs organized as 1024K
words by 16 bits. It is fabricated using
ISSI
's high-perfor-
mance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
high-performance and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The device is packaged in the JEDEC standard 48-pin
TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
DESCRIPTION
The
ISSI
IS61WV102416ALL/BLL and IS64WV102416BLL
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1024K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.  F
05/09/12
1

IS61WV102416ALL-20MI相似产品对比

IS61WV102416ALL-20MI IS61WV102416ALL-20MI-TR IS61WV102416BLL-10MI IS64WV102416BLL-10MA3-TR
描述 SRAM 16M (1Mx16) 20ns Async SRAM SRAM 16M (1Mx16) 20ns Async SRAM SRAM 16M 3.3V 10ns 1M x 16 Async SRAM SRAM 16M (1Mx16) 10ns Async SRAM
Product Attribute Attribute Value Attribute Value Attribute Value -
制造商
Manufacturer
ISSI(芯成半导体) ISSI(芯成半导体) ISSI(芯成半导体) -
产品种类
Product Category
SRAM SRAM SRAM -
RoHS N N N -
Memory Size 16 Mbit 16 Mbit 16 Mbit -
Organization 1 M x 16 1 M x 16 1 M x 16 -
Access Time 20 ns 20 ns 10 ns -
接口类型
Interface Type
Parallel Parallel Parallel -
电源电压-最大
Supply Voltage - Max
2.2 V 2.2 V 3.6 V -
电源电压-最小
Supply Voltage - Min
1.65 V 1.65 V 2.4 V -
Supply Current - Max 60 mA 60 mA 95 mA -
最小工作温度
Minimum Operating Temperature
- 40 C - 40 C - 40 C -
最大工作温度
Maximum Operating Temperature
+ 85 C + 85 C + 85 C -
安装风格
Mounting Style
SMD/SMT SMD/SMT SMD/SMT -
封装 / 箱体
Package / Case
BGA-48 BGA-48 BGA-48 -
系列
Packaging
Tray Reel Tray -
Memory Type SDR SDR SDR -
类型
Type
Asynchronous Asynchronous Asynchronous -
Moisture Sensitive Yes Yes Yes -
工厂包装数量
Factory Pack Quantity
220 2000 220 -
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