MG200Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS65H
High Power & High Speed Switching
Applications
Unit: mm
·
·
·
High input impedance
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
E1
E2
C1
E2
G1 E1/C2
G2
JEDEC
JEITA
TOSHIBA
Weight: 430 g (typ.)
―
―
2-109C4A
Maximum Ratings
(Tc
=
25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
V
Isol
Terminal
Mounting
¾
¾
Rating
1200
±20
200
400
200
400
1310
150
-40
to 125
2500
(AC 1 minute)
3
3
Unit
V
V
A
Forward current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque
A
W
°C
°C
V
N▪m
1
2002-10-04
MG200Q2YS65H
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Switching time
Turn-on time
Turn-off delay time
Fall time
Turn-off time
Forward voltage
Reverse recovery time
Thermal resistance
Turn-on
Switching loss
Turn-off
E
off
Symbol
I
GES
I
CES
V
GE (off)
V
CE (sat)
C
ies
t
d (on)
t
r
t
on
t
d (off)
t
f
t
off
V
F
t
rr
R
th (j-c)
E
on
I
F
=
200 A, V
GE
=
0
I
F
=
200 A, V
GE
= -10
V,
di/dt
=
700 A/ms
Transistor stage
Diode stage
Inductive load
V
CC
=
600 V, I
C
=
200 A
V
GE
= ±15
V, R
G
=
4.7
W
Tc
=
125°C
Inductive load
V
CC
=
600 V, I
C
=
200 A
V
GE
= ±15
V, R
G
=
4.7
W
Test Condition
V
GE
= ±20
V, V
CE
=
0
V
CE
=
1200 V, V
GE
=
0
I
C
=
200 mA, V
CE
=
5 V
I
C
=
200 A,
V
GE
=
15 V
Tc
=
25°C
Tc
=
125°C
Min
¾
¾
4.0
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
Typ.
¾
¾
¾
3.0
3.6
17000
0.05
0.05
0.10
0.55
0.05
0.60
2.4
0.1
¾
¾
20
17
Max
±500
2.0
7.0
4.0
¾
¾
¾
¾
¾
¾
0.15
¾
3.5
¾
0.095
0.21
¾
mJ
¾
V
ms
°C/W
ms
Unit
nA
mA
V
V
pF
V
CE
=
10 V, V
GE
=
0, f
=
1 MHz
Note: Switching time measurement circuit and input/output waveforms
R
G
-V
GE
I
C
R
G
I
F
V
GE
0
90%
10%
t
rr
L
V
CC
I
C
V
CE
0
10%
t
d (off)
t
off
t
f
10%
t
d (on)
t
on
t
r
90%
90%
2
2002-10-04
MG200Q2YS65H
I
C
– V
CE (sat)
400
20 V
18 V
15 V
12 V
400
I
C
– V
CE (sat)
20 V
12 V
18 V
10 V
15 V
(A)
300
(A)
Collector current
I
C
10 V
300
Collector current
I
C
200
PC
=
1310 W
200
VGE
=
8 V
100
100
VGE
=
8 V
Common emitter
Tc
=
25°C
2
4
6
8
10
0
0
0
0
Common emitter
Tc
=
125°C
2
4
6
8
10
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
V
CE
– V
GE
16
Common emitter
Tc
=
25°C
16
V
CE
– V
GE
Common emitter
Tc
=
125°C
(V)
V
CE
12
V
CE
Collector-emitter voltage
(V)
12
Collector-emitter voltage
8
8
IC
=
400 A
4
200 A
IC
=
400 A
4
200 A
100 A
0
0
4
8
12
16
20
100 A
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
200
Common emitter
VCE
=
5 V
400
Common cathode
VGE
=
0
I
F
– V
F
(A)
150
(A)
Forward current I
F
Tc
=
125°C
300
Collector current
I
C
100
200
Tc
=
125°C
25°C
50
-40°C
0
0
100
25°C
4
8
12
16
0
0
1
2
3
4
Gate-emitter voltage V
GE
(V)
Forward voltage
V
F
(V)
3
2002-10-04
MG200Q2YS65H
Switching time – I
C
1
: Tc
=
25°C
: Tc
=
125°C
Common emitter
VCC
=
600 V
VGE
= ±15
V
RG
=
4.7
W
1
Switching time – I
C
toff
td (off)
(ms)
Switching time
0.1
tr
td (on)
Switching time
ton
(ms)
0.1
tf
Common emitter
VCC
=
600 V
VGE
= ±15
V
RG
=
4.7
W
: Tc
=
25°C
: Tc
=
125°C
100
1000
0.01
10
100
1000
0.01
10
Collector current
I
C
(A)
Collector current
I
C
(A)
Switching time – R
G
1
: Tc
=
25°C
: Tc
=
125°C
10
ton
td (on)
Switching time – R
G
Common emitter
VCC
=
600 V
IC
=
200 A
VGE
= ±15
V
toff
(ms)
tr
(ms)
1
Switching time
Switching time
0.1
td (off)
0.1
tf
Common emitter
VCC
=
600 V
IC
=
200 A
VGE
= ±15
V
0.01
1
10
100
0.01
1
: Tc
=
25°C
: Tc
=
125°C
10
100
Gate resistance R
G
(9)
Gate resistance R
G
(9)
Switching loss – I
C
100
: Tc
=
25°C
: Tc
=
125°C
Eon
Eoff
10
Edsw
1000
Switching loss – R
G
Common emitter
VCC
=
600 V
IC
=
200 A
VGE
= ±15
V
Eon
Eoff
(mJ)
(mJ)
Switching loss
100
Switching loss
1
Common emitter
VCC
=
600 V
VGE
= ±15
V
RG
=
4.7
W
100
1000
10
0.1
10
1
1
: Tc
=
25°C
: Tc
=
125°C
10
Edsw
100
Collector current
I
C
(A)
Gate resistance R
G
(9)
4
2002-10-04
MG200Q2YS65H
V
CE
, V
GE
– Q
G
1600
Common emitter
RL
=
3
W
Tc
=
25°C
1200
VCE
=
0
800
600 V
400 V
200 V
400
4
8
12
16
100000
C – V
CE
(V)
(V)
V
CE
Cies
Gate-emitter voltage V
GE
(pF)
10000
Coes
Cres
1000
Common emitter
VGE
=
0
f
=
1 MHz
Tc
=
25°C
100
0.01
Collector-emitter voltage
0
0
400
800
1200
1600
2000
Capacitance C
0.1
1
10
100
Charge Q
G
(nC)
Collector-emitter voltage
V
CE
(V)
Short circuit SOA
6
1000
Reverse bias SOA
5
(x times)
(A)
Collector current
I
C
4
3
2
VCC
<
900 V
=
1
Tj
<
125°C
=
tw
=
5
ms
0
0
200
400
600
800
1000
1200
1400
100
Collector current
10
1
Tj
<
125°C
=
VGE
= ±15
V
RG
=
4.7
W
0.1
0
500
1000
1500
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
R
th (t)
– t
w
1
Transient thermal resistance
R
th (t)
(°C/W)
Diode stage
0.1
Transistor stage
0.01
Tc
=
25°C
0.001
0.001
0.01
0.1
1
10
Pulse width
t
w
(s)
5
2002-10-04
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