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IRF6691: 产品描述MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC; 产品类别半导体分立半导体; 文件大小626KB，共12页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/

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MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	MOSFET
RoHS	N
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	DirectFET-MT
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	32 A
Rds On - Drain-Source Resistance	1.8 mOhms
Vgs - Gate-Source Voltage	12 V
Qg - Gate Charge	47 nC
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Single Quad Drain Dual Source
Pd-功率耗散 Pd - Power Dissipation	2.8 W
Channel Mode	Enhancement
系列 Packaging	Tube
高度 Height	0.7 mm
长度 Length	6.35 mm
Transistor Type	1 N-Channel
类型 Type	HEXFET Power MOSFET plus Schottky Diode
宽度 Width	5.05 mm
Fall Time	10 ns
Moisture Sensitive	Yes
Rise Time	95 ns
工厂包装数量 Factory Pack Quantity	4800
Typical Turn-Off Delay Time	25 ns
Typical Turn-On Delay Time	23 ns

	IRF6691	IRF6691TR1
描述	MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC	MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
Product Attribute	Attribute Value	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)
产品种类 Product Category	MOSFET	MOSFET
RoHS	N	N
技术 Technology	Si	Si
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	DirectFET-MT	DirectFET-MT
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	20 V	20 V
Id - Continuous Drain Current	32 A	32 A
Rds On - Drain-Source Resistance	1.8 mOhms	1.8 mOhms
Vgs - Gate-Source Voltage	12 V	12 V
Qg - Gate Charge	47 nC	47 nC
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Single Quad Drain Dual Source	Single Quad Drain Dual Source
Pd-功率耗散 Pd - Power Dissipation	2.8 W	2.8 W
Channel Mode	Enhancement	Enhancement
高度 Height	0.7 mm	0.7 mm
长度 Length	6.35 mm	6.35 mm
Transistor Type	1 N-Channel	1 N-Channel
类型 Type	HEXFET Power MOSFET plus Schottky Diode	HEXFET Power MOSFET plus Schottky Diode
宽度 Width	5.05 mm	5.05 mm
Fall Time	10 ns	10 ns
Moisture Sensitive	Yes	Yes
Rise Time	95 ns	95 ns
工厂包装数量 Factory Pack Quantity	4800	1000
Typical Turn-Off Delay Time	25 ns	25 ns
Typical Turn-On Delay Time	23 ns	23 ns
系列 Packaging	Tube	Reel

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