STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600 V, 0.145
Ω
typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet
-
production data
TAB
Features
Order codes
3
1
V
DS
@ T
jmax
R
DS(on)
max
I
D
D
2
PAK
1
STB26NM60ND
3
2
STF26NM60ND
650 V
STP26NM60ND
STW26NM60ND
0.175
21 A
TO-220FP
TAB
•
100% avalanche tested
3
1
2
2
1
3
•
Low input capacitance and gate charge
•
Low gate input resistance
•
Extremely high dv/dt and avalanche
capabilities
TO-220
TO-247
Figure 1. Internal schematic diagram
Applications
•
Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Table 1. Device summary
Order codes
STB26NM60ND
STF26NM60ND
26NM60ND
STP26NM60ND
STW26NM60ND
TO-220
TO-247
Tube
Marking
Packages
D²PAK
TO-220FP
Packaging
Tape and reel
November 2013
This is information on a product in full production.
DocID025283 Rev 1
1/23
www.st.com
Contents
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1
Electrical characteristics (curves)
............................. 7
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
2/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol
Parameter
D
2
PAK, TO-220,
TO-247
600
±25
21
13
84
190
40
40
2500
–55 to 150
150
21
(1)
13
(1)
84(1)
35
Unit
TO-220FP
V
V
A
A
A
W
V/ns
V/ns
V
°C
°C
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
dv/dt
(3)
dv/dt
(4)
V
ISO
T
stg
T
J
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
C
= 25 °C
Drain current (continuous) at T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
C
=25 °C)
Storage temperature
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3.
4.
I
SD
≤
21 A, di/dt
≤
400 A/µs, V
DD
= 80% V
(BR)DSS
V
DS
≤
480 V
Table 3. Thermal data
Value
Symbol
Parameter
D²PAK
R
thj-case
R
thj-amb
R
thj-pcb(1)
Thermal resistance junction-
case max
Thermal resistance junction-
ambient max
Thermal resistance junction-
pcb max
30
0.66
TO-220FP
3.57
62.5
TO-220
0.66
50
TO-247
°C/W
°C/W
°C/W
Unit
1. When mounted on 1inch² FR-4 board, 2 oz Cu
DocID025283 Rev 1
3/23
23
Electrical ratings
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Table 4. Avalanche characteristics
Symbol
I
AR
E
AS
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
J
max)
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AS
, V
DD
= 50 V)
Value
4
100
Unit
A
mJ
4/23
DocID025283 Rev 1
STB26NM60ND, STF26NM60ND, STP26NM60ND, STW26NM60ND
Electrical characteristics
2
Electrical characteristics
(T
CASE
=25 °C unless otherwise specified).
Table 5. On/off states
Value
Symbol
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source
on- resistance
Test conditions
Min.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
I
D
= 1 mA, V
GS
= 0
V
DS
= 600 V
V
DS
= 600 V @T
C
= 125 °C
V
GS
= ± 25 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 10.5 A
3
4
0.145
600
1
100
±100
5
0.175
Typ.
Max.
V
µA
µA
nA
V
Ω
Unit
Table 6. Dynamic
Symbol
C
iss
C
oss
C
rss
C
oss eq.(1)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Intrinsic gate resistance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
Test conditions
Min.
-
-
-
V
GS
= 0, V
DS
= 0 to 480 V
V
DD
= 300 V, I
D
= 10.5 A
R
G
= 4.7
Ω
V
GS
= 10 V
(see Figure 23),
(see Figure 18)
V
DD
= 480 V, I
D
= 21 A,
V
GS
= 10 V,
(see Figure 19)
f = 1 MHz, I
D
= 0
-
-
-
-
-
-
-
-
-
Typ.
1817
90
4.4
270
22
14.5
69
27.5
54.6
9.1
32.5
2.5
Max.
-
-
-
-
-
-
-
-
-
-
-
-
Unit
pF
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Ω
1. C
oss eq
. is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
DocID025283 Rev 1
5/23
23
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