OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8
运算放大器, 10 uV 最大补偿, 2.5 MHz 波段 宽度, PDIP8
参数名称 | 属性值 |
是否Rohs认证 | 不符合 |
零件包装代码 | DIP |
包装说明 | DIP, DIP8,.3 |
针数 | 8 |
Reach Compliance Code | unknow |
ECCN代码 | EAR99 |
放大器类型 | OPERATIONAL AMPLIFIER |
架构 | CHOPPER-STAB |
最大平均偏置电流 (IIB) | 0.001 µA |
25C 时的最大偏置电流 (IIB) | 0.00005 µA |
最小共模抑制比 | 110 dB |
标称共模抑制比 | 130 dB |
频率补偿 | YES |
最大输入失调电压 | 10 µV |
JESD-30 代码 | R-GDIP-T8 |
JESD-609代码 | e0 |
低-偏置 | YES |
低-失调 | YES |
负供电电压上限 | -16 V |
标称负供电电压 (Vsup) | -15 V |
功能数量 | 1 |
端子数量 | 8 |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
封装主体材料 | CERAMIC, GLASS-SEALED |
封装代码 | DIP |
封装等效代码 | DIP8,.3 |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
峰值回流温度(摄氏度) | NOT SPECIFIED |
电源 | 5/+-15 V |
可编程功率 | YES |
认证状态 | Not Qualified |
座面最大高度 | 5.08 mm |
标称压摆率 | 3 V/us |
最大压摆率 | 1.8 mA |
供电电压上限 | 16 V |
标称供电电压 (Vsup) | 15 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子面层 | Tin/Lead (Sn/Pb) |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
标称均一增益带宽 | 2500 kHz |
最小电压增益 | 10000000 |
宽度 | 7.62 mm |
Base Number Matches | 1 |
LTC1150CJ8 | LTC1150 | LTC1150MJ8 | LTC1150CN8 | LTC1150_03 | LTC1150CS8 | |
---|---|---|---|---|---|---|
描述 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 |
放大器类型 | OPERATIONAL AMPLIFIER | OP-AMP | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OP-AMP | OPERATIONAL AMPLIFIER |
最大输入失调电压 | 10 µV | 10 mV | 10 µV | 10 µV | 10 mV | 10 µV |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 | 8 |
温度等级 | INDUSTRIAL | INDUSTRIAL | MILITARY | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | - | 不符合 |
零件包装代码 | DIP | - | DIP | DIP | - | SOIC |
包装说明 | DIP, DIP8,.3 | - | DIP, DIP8,.3 | DIP, DIP8,.3 | - | 0.150 INCH, PLASTIC, SO-8 |
针数 | 8 | - | 8 | 8 | - | 8 |
Reach Compliance Code | unknow | - | compli | _compli | - | _compli |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | - | EAR99 |
架构 | CHOPPER-STAB | - | CHOPPER-STAB | CHOPPER-STAB | - | CHOPPER-STAB |
最大平均偏置电流 (IIB) | 0.001 µA | - | 0.0025 µA | 0.001 µA | - | 0.001 µA |
25C 时的最大偏置电流 (IIB) | 0.00005 µA | - | 0.00003 µA | 0.00005 µA | - | 0.00005 µA |
最小共模抑制比 | 110 dB | - | 110 dB | 110 dB | - | 110 dB |
标称共模抑制比 | 130 dB | - | 130 dB | 130 dB | - | 130 dB |
频率补偿 | YES | - | YES | YES | - | YES |
JESD-30 代码 | R-GDIP-T8 | - | R-GDIP-T8 | R-PDIP-T8 | - | R-PDSO-G8 |
JESD-609代码 | e0 | - | e0 | e0 | - | e0 |
低-偏置 | YES | - | YES | YES | - | YES |
低-失调 | YES | - | YES | YES | - | YES |
负供电电压上限 | -16 V | - | -16 V | -16 V | - | -16 V |
标称负供电电压 (Vsup) | -15 V | - | -15 V | -15 V | - | -15 V |
最高工作温度 | 85 °C | - | 125 °C | 85 °C | - | 85 °C |
最低工作温度 | -40 °C | - | -55 °C | -40 °C | - | -40 °C |
封装主体材料 | CERAMIC, GLASS-SEALED | - | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
封装代码 | DIP | - | DIP | DIP | - | SOP |
封装等效代码 | DIP8,.3 | - | DIP8,.3 | DIP8,.3 | - | SOP8,.25 |
封装形状 | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | - | RECTANGULAR |
封装形式 | IN-LINE | - | IN-LINE | IN-LINE | - | SMALL OUTLINE |
峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | 235 |
电源 | 5/+-15 V | - | 5/+-15 V | 5/+-15 V | - | 5/+-15 V |
可编程功率 | YES | - | YES | YES | - | YES |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | - | Not Qualified |
座面最大高度 | 5.08 mm | - | 5.08 mm | 4.445 mm | - | 1.75 mm |
标称压摆率 | 3 V/us | - | 3 V/us | 3 V/us | - | 3 V/us |
最大压摆率 | 1.8 mA | - | 1.8 mA | 1.8 mA | - | 1.8 mA |
供电电压上限 | 16 V | - | 16 V | 16 V | - | 16 V |
标称供电电压 (Vsup) | 15 V | - | 15 V | 15 V | - | 15 V |
表面贴装 | NO | - | NO | NO | - | YES |
技术 | CMOS | - | CMOS | CMOS | - | CMOS |
端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
端子节距 | 2.54 mm | - | 2.54 mm | 2.54 mm | - | 1.27 mm |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | - | 20 |
标称均一增益带宽 | 2500 kHz | - | 2500 kHz | 2500 kHz | - | 2500 kHz |
最小电压增益 | 10000000 | - | 10000000 | 10000000 | - | 10000000 |
宽度 | 7.62 mm | - | 7.62 mm | 7.62 mm | - | 3.9 mm |
器件名 | 厂商 | 描述 |
---|---|---|
TC901CPA | TelCom Semiconductor, Inc. (Microchip Technology) | OP-AMP, 15 uV OFFSET-MAX, 0.8 MHz BAND WIDTH, PDIP8 |
LTC1150MJ8 | Linear ( ADI ) | OP-AMP, 10 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP8 |
LTC1150CN | Linear ( ADI ) | IC OP-AMP, 5 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, PDIP14, PLASTIC, DIP-14, Operational Amplifier |
LTC1150CH | Linear ( ADI ) | IC OP-AMP, 5 uV OFFSET-MAX, 2.5 MHz BAND WIDTH, MBCY8, METAL CAN, TO-5, 8 PIN, Operational Amplifier |
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