VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
Ultralow V
F
Hyperfast Rectifier for Discontinuous Mode PFC,
15 A FRED Pt
®
FEATURES
2
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
1
3
• Designed and qualified according to JEDEC
®
-JESD 47
2L TO-220AC
Base
cathode
2
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
State of the art, ultralow V
F
, soft-switching hyperfast
rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
1
Cathode
3
Anode
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Package
Circuit configuration
15 A
600 V
0.85 V
60 ns
175 °C
2L TO-220AC
Single
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Peak repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 154 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
15
250
30
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
0.99
0.85
0.1
15
20
8.0
MAX.
-
1.05
0.92
10
120
-
-
μA
pF
nH
V
UNITS
Revision: 23-Nov-17
Document Number: 96175
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
TYP.
60
190
220
320
19
26
2.2
4.3
MAX.
120
270
-
-
-
-
-
-
A
μC
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
Peak recovery current
Reverse recovery charge
I
RRM
Q
rr
THERMAL MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance, junction-to-case
Thermal resistance, junction-to-ambient per
leg
Thermal resistance, case-to-heatsink
Weight
Mounting torque
Marking device
Case style 2L TO-220AC
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth,
and greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6.0
(5.0)
TYP.
-
1.0
-
0.5
2.0
0.07
-
MAX.
175
1.3
70
-
-
-
12
(10)
15ETL06
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
I
F
- Instantaneous Forward Current (A)
100
100
T
J
= 175 °C
I
R
- Reverse Current (µA)
10
T
J
= 150 °C
T
J
= 125 °C
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1
T
J
= 100 °C
T
J
= 75 °C
0.1
T
J
= 50 °C
T
J
= 25 °C
0.01
1
0.4
0.001
0.6
0.8
1.0
1.2
1.4
1.6
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Revision: 23-Nov-17
Document Number: 96175
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETL06-M3
www.vishay.com
100
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
180
25
RMS limit
Allowable Case Temperature (°C)
170
DC
160
Square wave (D = 0.50)
Rated V
R
applied
Average Power Loss (W)
20
15
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
150
10
140
See note (1)
130
0
5
10
15
20
25
5
DC
0
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 23-Nov-17
Document Number: 96175
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETL06-M3
www.vishay.com
Vishay Semiconductors
9000
I
F
= 30 A
I
F
= 15 A
8000
7000
6000
I
F
= 30 A
I
F
= 15 A
500
400
Q
rr
(nC)
t
rr
(ns)
300
5000
4000
3000
200
100
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
2000
1000
0
100
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
0
100
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
di
(rec)M
/dt
(5)
0.75 I
RRM
(1)
di
F
/dt
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 23-Nov-17
Document Number: 96175
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-15ETL06-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
15
2
E
3
T
4
L
5
06
6
-M3
7
Vishay
Semiconductors
product
Current rating (15 = 15 A)
E =
single
diode
T = TO-220, D
2
PAK (TO-263AB)
L = ultralow V
F
hyperfast recovery
Voltage rating (06 = 600 V)
Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-15ETL06-M3
QUANTITY PER T/R
50
MINIMUM ORDER QUANTITY
1000
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
www.vishay.com/doc?96156
www.vishay.com/doc?95391
www.vishay.com/doc?96051
Revision: 23-Nov-17
Document Number: 96175
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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