STB70NH03L
N-channel 60V - 0.0075Ω - 70A - D
2
PAK
STripFET™ III Power MOSFET for DC-DC conversion
General features
Type
STB70NH03L
■
■
■
■
V
DSS
30V
R
DS(on)
< 0.009Ω
I
D
60A
(1)
R
DS(on)
x Qg industry benchmark
Conduction losses reduced
1
3
Switching losses reduced
Low threshold device
D²PAK
Description
The device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at
very high output currents.
Internal schematic diagram
Applications
■
Switching application
O
codes
Order
Part number
STB70NH03LT4
Marking
B70NH03L
Package
D²PAK
Packaging
Tape & reel
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July 2006
Rev 6
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www.st.com
15
Contents
STB70NH03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
7
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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STB70NH03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D (1)
I
D (1)
I
DM (2)
P
TOT
E
AS (3)
T
stg
T
J
Absolute maximum ratings
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
-55 to 175
Operating Junction Temperature
300
Value
30
30
± 20
60
43
240
858
Unit
V
V
V
A
A
A
W
1. Value limited by wire bonding
2. Pulse width limited by safe oper`ting area
3. Starting T
J
= 25
o
C, ID = 30A, V
DD
= 20V
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
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Value
1.87
62.5
300
s)
t(
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W/°C
mJ
°C
Unit
°C/W
°C/W
°C
3/15
Electrical characteristics
STB70NH03L
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage
Current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= max rating
V
DS
= max rating
T
C
= 125°C
V
GS
= ± 20 V
V
DS
= V
GS
V
GS
= 10 V
V
GS
= 5 V
I
D
= 250 µA
I
D
= 30 A
I
D
= 30 A
1
Min
30
1
10
±100
Typ
Max
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
0.0075 0.0095
0.0135 0.009
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Test conditions
V
DS
= 10 V
V
DS
= 10V f = 1 MHz V
GS
= 0
R
G
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Gate Input Resistance
Turn-on delay time
Rise time
Turn-off delay Time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Third-quadrant gate
charge
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f = 1 MHz gate DC bias = 0
test signal level = 20 mV
open drain
so
b
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I
D
= 18 A
et
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P
e
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od
r
25
s)
t(
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Max
Typ
Unit
S
pF
pF
pF
2200
380
49
1.5
21
95
19
15
15.7
8.3
3.4
15
21
Ω
V
DD
= 15 V
R
G
= 4.7
Ω
I
D
= 30 A
V
GS
= 5 V
ns
ns
V
DD
= 15V I
D
= 70A
V
GS
= 5V
V
DS
< 0 V V
GS
= 10 V
nC
nC
nC
nC
Q
gls(2)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. Gate charge for synchronous operation . See
Chapter 6: Appendix A
4/15
STB70NH03L
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 30 A
V
GS
= 0
32
51
3.2
Test conditions
Min
Typ
Max
60
240
1.3
Unit
A
A
V
ns
nC
A
(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I = 60 A di/dt = 100A/µs
Reverse recovery charge
SD
T
J
= 150°C
V
DD
= 20 V
Reverse recovery current
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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