AUTOMOTIVE GRADE
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
•
•
•
•
•
•
•
•
•
•
•
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μS
short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature Coefficient
Soft Recovery Co-Pak Diode
Tight parameter distribution
Lead-Free,
RoHS Compliant
Automotive Qualified *
E
C
G
C
G
E
C
AUIRGP4066D1
AUIRGP4066D1-E
V
CES
= 600V
I
C(Nominal)
= 75A
t
SC
≥
5μs, T
J(max)
= 175°C
n-channel
C
V
CE(on)
typ. = 1.70V
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
G C
E
TO-247AC
AUIRGP4066D1
TO-247AD
AUIRGP4066D1-E
G
G ate
Standard Pack
Form
Tube
Tube
C
C ollector
E
Em itter
Complete Part Number
Ordering Information
Base part number
AUIRGP4066D1
AUIRGP4066D1-E
Package Type
TO-247AC
TO-247AD
Quantity
25
25
AUIRGP4066D1
AUIRGP4066D1-E
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional
operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated
conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions. Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
NOMINAL
I
CM
I
LM
I
F NOMINAL
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
ST G
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current V
GE
= 15V
Clamped Inductive Load Current V
GE
= 20V
Diode Nominal Current
Max.
600
140
90
75
225
300
75
300
±20
±30
454
227
-55 to +175
Units
V
g
d
c
Diode Maximum Forward Current
d
g
A
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.33
0.53
–––
–––
Units
°C/W
Thermal Resistance
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
f
Thermal Resistance Junction-to-Case-(each Diode)
f
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
*Qualification
standards can be found at http://www.irf.com/
1
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©
2013 International Rectifier
May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Δ
Δ
V
(B R)CES
/ T
J
Min.
600
—
—
—
—
4.0
—
—
—
—
—
—
—
Typ.
—
0.30
1.70
2.0
2.1
—
-13
50
3.0
10
1.60
1.54
—
Max.
—
—
2.1
—
—
6.5
—
—
200
—
1.77
—
±100
Units
V
V/°C
V
V
S
μA
mA
V
nA
Conditions
V
GE
= 0V, I
C
= 200μA
Co
llecto
r-to-Emitte Bre kdo n Vo ge
r
a w
lta
T empera
ture Co of Brea
eff.
kdow Vo ge
n lta
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
f
d
= 150°C
d
= 175°C
d
V
GE
= 0V, I
C
= 15mA (25°C-175°C)
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
I
C
= 75A, V
GE
= 15V, T
J
I
C
= 75A, V
GE
= 15V, T
J
V
CE
= V
GE
, I
C
= 2.1mA
V
CE
= 50V, I
C
= 75A, PW = 25μs
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
I
F
= 75A
I
F
= 75A, T
J
= 175°C
V
GE
= ±20V
V
CE(on)
V
GE(th)
Δ
Δ
V
GE(t h)
/ T J
gfe
I
CES
V
FM
I
GES
mV/°C V
CE
= V
GE
, I
C
= 20mA (25°C - 175°C)
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
150
40
60
4240
2170
6410
50
80
200
60
6210
2815
9025
45
70
240
80
4470
350
140
Max.
225
60
90
5190
3060
8250
70
100
230
80
—
—
—
—
—
—
—
—
—
—
Units
I
C
= 75A
nC
V
GE
= 15V
V
CC
= 400V
Conditions
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 10Ω, L = 100μH, T
J
= 25°C
E nergy los s es include tail & diode revers e recovery
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
ns
R
G
= 10Ω, L = 100μH
TJ = 25°C
I
C
= 75A, V
CC
= 400V, V
GE
=15V
μJ
R
G
=10Ω, L=100μH, T
J
= 175°C
E nergy los s es include tail & diode revers e recovery
I
C
= 75A, V
CC
= 400V, V
GE
=15V
ns
R
G
=10Ω, L=100μH
T
J
= 175°C
V
GE
= 0V
pF
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
V
CC
= 480V, Vp
600V
Rg = 10Ω, V
GE
= +20V to 0V
V
CC
= 400V, Vp
600V
Rg = 10Ω, V
GE
= +15V to 0V
T
J
= 175°C
V
CC
= 400V, I
F
= 75A
V
GE
= 15V, Rg = 10Ω, L =100μH
FULL SQUARE
5
—
—
—
—
680
240
50
—
—
—
—
μs
μJ
ns
A
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 100μH, R
G
= 50Ω, tested in production
I
LM
≤
400A.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
R
θ
is measured at T
J
of approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 120A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
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©
2013 International Rectifier
May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
150
125
100
75
50
25
0
25
50
75
100
TC (°C)
125
150
175
500
400
Ptot (W)
IC (A)
300
200
100
0
25
50
75
100
T C (°C)
125
150
175
Fig. 1
- Maximum DC Collector Current vs.
Case Temperature
1000
Fig. 2
- Power Dissipation vs. Case
Temperature
1000
100
10μsec
100μsec
100
IC (A)
IC (A)
10
1msec
DC
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
VCE (V)
100
1000
1
10
100
VCE (V)
1000
Fig. 3
- Forward SOA
T
C
= 25°C, T
J
≤
175°C; V
GE
=15V
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
250
200
Fig. 4
- Reverse Bias SOA
T
J
= 175°C; V
GE
=20V
150
100
50
0
0
2
4
6
150
100
50
0
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
ICE (A)
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp =
≤
60μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp =
≤
60μs
May 02, 2013
3
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©
2013 International Rectifier
AUIRGP4066D1/AUIRGP4066D1-E
300
250
200
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
250
200
-40°C
25°C
175°C
ICE (A)
150
100
50
0
0
2
4
6
8
10
IF (A)
150
100
50
0
0.0
1.0
2.0
VF (V)
3.0
4.0
VCE (V)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp =
≤
60μs
20
18
16
14
Fig. 8
- Typ. Diode Forward Characteristics
tp =
≤
60μs
20
18
16
14
VCE (V)
VCE (V)
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 38A
ICE = 75A
12
10
8
6
4
2
0
ICE = 150A
ICE = 38A
ICE = 75A
ICE = 150A
15
20
5
10
VGE (V)
15
20
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
20
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
300
IC, Collector-to-Emitter Current (A)
18
16
14
250
200
150
100
50
0
T J = 25°C
T J = 175°C
VCE (V)
12
10
8
6
4
2
0
5
10
ICE = 38A
ICE = 75A
ICE = 150A
15
VGE (V)
20
4
6
8
10
12
14
16
18
VGE, Gate-to-Emitter Voltage (V)
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp =
≤
60μs
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©
2013 International Rectifier
May 02, 2013
AUIRGP4066D1/AUIRGP4066D1-E
18000
16000
14000
12000
Swiching Time (ns)
tdOFF
1000
Energy (μJ)
10000
8000
6000
4000
2000
0
0
25
50
75
EON
100
tF
tR
EOFF
tdON
10
100
125
150
0
50
IC (A)
100
150
IC (A)
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 100μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
15000
13000
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 100μH; V
CE
= 400V, R
G
= 10Ω; V
GE
= 15V
10000
9000
7000
5000
EON
Swiching Time (ns)
11000
Energy (μJ)
1000
tdOFF
100
tF
tR
tdON
EOFF
3000
1000
0
25
50
Rg (Ω)
75
100
10
0
20
40
60
R G (Ω)
80
100
120
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 100μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
60
55
50
45
RG = 10Ω
RG =
22Ω
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 100μH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
55
50
45
IRR (A)
IRR (A)
RG = 47Ω
RG = 100Ω
40
35
30
25
20
20
40
60
80
100
120
140
160
IF (A)
40
35
30
25
0
20
40
60
80
100
RG (Ω)
Fig. 17
- Typ. Diode I
RR
vs. I
F
T
J
= 175°C
Fig. 18
- Typ. Diode I
RR
vs. R
G
T
J
= 175°C
5
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©
2013 International Rectifier
May 02, 2013
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