MUR8100E, MUR880E
MUR8100E is a Preferred Device
SWITCHMODEt
Power Rectifiers
Ultrafast “E’’ Series with High Reverse
Energy Capability
The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
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•
20 mJ Avalanche Energy Guaranteed
•
Excellent Protection Against Voltage Transients in Switching
•
•
•
•
•
•
•
•
•
Inductive Load Circuits
Ultrafast 75 Nanosecond Recovery Time
175°C Operating Junction Temperature
Popular TO−220 Package
Epoxy Meets UL 94 V−0 @ 0.125 in.
Low Forward Voltage
Low Leakage Current
High Temperature Glass Passivated Junction
Reverse Voltage to 1000 V
Pb−Free Packages are Available*
ULTRAFAST RECTIFIERS
8.0 A, 800 V
−
1000 V
1
4
3
4
TO−220AC
CASE 221B
1
3
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.9 Grams (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MARKING DIAGRAM
AY WWG
U8xxxE
KA
A
Y
WW
G
U8xxxE
KA
=
=
=
=
=
Assembly Location
Year
Work Week
Pb−Free Package
Device Code
xxx = 100 or 80
= Diode Polarity
ORDERING INFORMATION
Device
MUR8100E
MUR8100EG
MUR880E
MUR880EG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Package
TO−220
TO−220
(Pb−Free)
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Preferred
devices are recommended choices for future use
and best overall value.
June, 2008
−
Rev. 4
1
Publication Order Number:
MUR8100E/D
MUR8100E, MUR880E
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
R
, T
C
= 150°C) Total Device
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 150°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction and Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FM
I
FSM
T
J
, T
stg
Value
Unit
V
800
1000
8.0
16
100
−65
to +175
A
A
A
°C
MUR880E
MUR8100E
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Value
2.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150°C)
(i
F
= 8.0 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 100°C)
(Rated DC Voltage, T
C
= 25°C)
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
Symbol
v
F
Value
1.5
1.8
500
25
100
75
20
Unit
V
i
R
mA
t
rr
ns
W
AVAL
mJ
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2
MUR8100E, MUR880E
100
70
50
30
20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10,000
1000
IR, REVERSE CURRENT (
m
A)
100
10
1.0
0.1
100°C
* The curves shown are typical for the highest voltage device in the voltage
*
grouping. Typical reverse current for lower voltage selections can be
*
estimated from these same curves if V
R
is sufficiently below rated V
R
.
175°C
150°C
10
7.0
5.0
3.0
2.0
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
T
J
= 175°C
100°C
25°C
T
J
= 25°C
0
200
400
600
800
1000
0.01
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
140
150
160
170
180
T
C
, CASE TEMPERATURE (°C)
SQUARE WAVE
dc
RATED V
R
APPLIED
1.0
0.7
0.5
0.3
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 3. Current Derating, Case
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
140
160
180
200
T
A
, AMBIENT TEMPERATURE (°C)
SQUARE WAVE
dc
SQUARE WAVE
dc
R
qJA
= 16°C/W
R
qJA
= 60°C/W
(No Heat Sink)
14
12
10
dc
8.0
6.0
4.0
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
T
J
= 175°C
SQUARE WAVE
Figure 4. Current Derating, Ambient
Figure 5. Power Dissipation
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MUR8100E, MUR880E
+V
DD
I
L
40
mH
COIL
BV
DUT
V
D
MERCURY
SWITCH
S
1
I
D
I
D
I
L
DUT
V
DD
t
0
t
1
t
2
t
Figure 6. Test Circuit
Figure 7. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
EQUATION (1):
BV
2
DUT
W
[
1 LI LPK
AVAL
2
V
BV
DUT DD
CH1
CH2
500V
50mV
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
The oscilloscope picture in Figure 8, shows the
MUR8100E in this test circuit conducting a peak current of
one ampere at a breakdown voltage of 1300 V, and using
Equation (2) the energy absorbed by the MUR8100E is
approximately 20 mjoules.
Although it is not recommended to design for this
condition, the new “E’’ series provides added protection
against those unforeseen transient viruses that can produce
unexplained random failures in unfriendly environments.
A
20ms
953 V
VERT
CHANNEL 2:
I
L
0.5 AMPS/DIV.
EQUATION (2):
2
W
[
1 LI LPK
AVAL
2
CHANNEL 1:
V
DUT
500 VOLTS/DIV.
TIME BASE:
20
ms/DIV.
1
CH1
ACQUISITIONS
SAVEREF SOURCE
CH2
217:33 HRS
STACK
REF
REF
Figure 8. Current−Voltage Waveforms
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4
MUR8100E, MUR880E
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
t, TIME (ms)
5.0
0.05
0.01
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
20
P
(pk)
Z
qJC
(t) = r(t) R
qJC
R
qJC
= 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC
(t)
D = 0.5
50
100
200
500
1000
Figure 9. Thermal Response
1000
T
J
= 25°C
C, CAPACITANCE (pF)
300
100
30
10
1.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
Figure 10. Typical Capacitance
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