74V2G66
Contents
Contents
1
2
3
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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Doc ID 8391 Rev 5
2/13
Description
74V2G66
1
Description
The 74V2G66 is an advanced high-speed CMOS dual bilateral switch developed using
silicon gate C
2
MOS technology. It achieves high speed propagation delay and very low ON
resistance, while maintaining true CMOS low power consumption. This bilateral switch
handles rail-to-rail analog and digital signals that may vary across the full power supply
range (from GND to V
CC
).
The C input is provided to control the switch, and it is compatible with standard CMOS
output; the switch is ON (port I/O is connected to port O/I) when the C input is held high and
OFF (high impedance state exists between the two ports) when C is held low. It can be used
in various applications, such as battery-powered systems and test equipment. It is available
in the commercial and extended temperature range housed in a SOT23-8L package. All
inputs and outputs are equipped with protection circuits to defend against static discharge,
giving them ESD immunity and transient excess voltage protection.
Figure 1.
Pin connection and IEC logic symbols
Figure 2.
Input equivalent circuit
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Doc ID 8391 Rev 5
74V2G66
Table 2.
Pin description
Pin No.
1, 5
2, 6
7, 3
4
8
Symbol
1I/O, 2I/O
1O/I, 2O/I
1C, 2C
GND
V
CC
Description
Name and function
Independent input/output
Independent output/input
Enable input (active HIGH)
Ground (0 V)
Positive supply voltage
Table 3.
Truth table
Control
H
L
Switch function
ON
OFF
(1)
1. High impedance state.
Table 4.
Symbol
V
CC
V
I
V
IC
V
O
I
IK
II
K
Absolute maximum ratings
(1)
Parameter
Supply voltage
DC Input voltage
DC control input voltage
DC output voltage
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et
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P
e
I
OK
I
O
I
CC
or I
GND
T
stg
T
L
uc
d
DC input diode current
DC control input diode current
)-
(s
t
b
O
so
te
le
Value
± 20
-20
± 20
± 50
± 50
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Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
-0.5 to +7.0
-0.5 to V
CC
+0.5
-0.5 to +7.0
-0.5 to V
CC
+0.5
DC output diode current
DC output current
DC V
CC
or ground current
Storage temperature
Lead temperature (10 sec.)
-65 to +150
300
1. Absolute maximum ratings are those values beyond which damage to the device may occur. Functional
operation under these conditions is not implied.
Doc ID 8391 Rev 5
4/13
Description
Table 5.
Recommended operating conditions
Parameter
Supply voltage
Input voltage
Control input voltage
Output voltage
Operating temperature
Input rise and fall time
(1)
V
CC
= 5.0 V
Value
2 to 5.5
0 to V
CC
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
74V2G66
Symbol
V
CC
V
I
V
IC
V
O
T
op
dt/dv
Unit
V
V
V
V
°C
ns/V
1. V
IN
from 30% to 70% of V
CC
on control pin.
Table 6.
DC specifications
Test condition
Value
Symbol
Parameter
V
CC
(V)
T
A
= 25 °C
Min.
Typ. Max.
-40 to 85 °C -55 to 125 °C
Min.
1.5
0.7
V
CC
0.5
0.5
0.3
V
CC
23
12
12.5
10
Max.
Min.
1.5
0.7
V
CC
0.5
0.3
V
CC
27
14
15
12
Max.
High level input
V
IH
Voltage
Low level input
V
IL
Voltage
2.0
2.7 to
5.5
2.0
2.7 to
5.5
1.5
R
ON
ON resistance
R
ON
b
O
I
OFF
et
l
so
ON resistance
r
P
e
od
5.0
(2)
3.3
(1)
5.0
(2)
5.5
3.3
(1)
uc
V
IC
= V
IH
V
I/O
= V
CC
to GND
I
I/O
≤
1 mA
s)
t(
O
-
0.7
V
CC
so
b
7.5
8.5
6.5
te
le
0.3
V
CC
19
10
10.5
8.5
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P
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s)
t(
Unit
V
V
12.5
Ω
V
IC
= V
IH
V
I/O
= V
CC
or GND
I
I/O
≤
1mA
V
OS
= V
CC
to GND
V
IS
= V
CC
to GND
V
IC
= V
IL
Ω
Input/output
leakage current
(SWITCH OFF)
Switch input
leakage current
(SWITCH ON,
OUTPUT
OPEN)
± 0.1
±1
±5
µA
I
IZ
5.5
V
OS
= V
CC
to GND
V
IC
= V
IH
± 0.1
±1
±5
µA
I
IN
I
CC
Control input
leakage current
Quiescent
supply current
0 to 5.5
5.5
V
IC
= 5.5 V or GND
V
I
= V
CC
or GND
± 0.1
1
± 1.0
10
± 1.0
20
µA
µA
1. Voltage range is 3.3 V ± 0.3 V.
2. Voltage range is 5 V ± 0.5 V.
5/13
Doc ID 8391 Rev 5
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