STGBL6NC60DI, STGDL6NC60DI
STGFL6NC60DI, STGPL6NC60DI
6 A, 600 V hyper fast IGBT
Features
■
■
■
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very high frequency operation
1
3
2
3
1
2
Very soft ultrafast recovery antiparallel diode
TO-220FP
TO-220
Applications
■
■
■
High frequency inverters
SMPS and PFC (hard switching too)
High frequency motor drive
3
1
3
1
DPAK
D²PAK
Description
Thanks to a new lifetime control system, this new
PowerMESH™ technology-based series of
devices exhibits very low turn-off energy,
representing the best trade-off between on-state
voltage and switching losses and thus allowing
very high operating frequencies.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
GBL6NC60DI
GDL6NC60DI
GPL6NC60DI
GFL6NC60DI
Package
D²PAK
DPAK
TO-220
TO-220FP
Packaging
Tape and reel
Tape and reel
Tube
Tube
Order codes
STGBL6NC60DIT4
STGDL6NC60DIT4
STGPL6NC60DI
STGFL6NC60DI
August 2009
Doc ID 15536 Rev 2
1/18
www.st.com
18
Contents
STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuits
............................................... 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
Doc ID 15536 Rev 2
STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Value
Symbol
Parameter
DPAK
V
CES
I
C(1)
I
C(1)
I
CL(2)
I
CP(3)
V
GE
I
F
I
FSM
P
TOT
V
ISO
T
j
Collector-emitter voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Surge non repetitive forward current t
p
=10ms
sinusoidal
Total dissipation at T
C
= 25 °C
Isolation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s; T
C
=25 °C)
Operating junction temperature
50
--
13
5
TO-220
D²PAK
600
14
6
18
18
±20
10
25
56
--
– 55 to 150
22
2500
7
3
Unit
TO-220FP
V
A
A
A
A
V
A
A
W
V
°C
1. Calculated according to the iterative formula:
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= ---------------------------------------------------------------------------------------------------------
-
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2. Vclamp = 80%,(V
CES
), Tj =150°C, R
G
= 10
Ω,
V
GE
= 15 V
3. Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Thermal data
Value
Symbol
Parameter
DPAK
Thermal resistance junction-case IGBT max.
2.5
4.5
100
TO-220
D²PAK
2.2
4
Unit
TO-220FP
5.6
7
62.5
°C/W
°C/W
°C/W
R
thj-case
R
thj-amb
Thermal resistance junction-case diode max.
Thermal resistance junction-ambient max.
Doc ID 15536 Rev 2
3/18
Electrical characteristics
STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
2
Electrical characteristics
(T
j
=25 °C unless otherwise specified)
Table 4.
Symbol
Static electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
V
(BR)CES
breakdown voltage
(V
GE
= 0)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
I
C
= 1 mA
600
1.9
2.2
2
3.75
V
V
V
V
V
µA
mA
nA
S
V
GE
= 15 V, I
C
= 1.5 A
Collector-emitter saturation
V
GE
= 15 V, I
C
= 3 A
voltage
V
GE
= 15 V, I
C
= 3 A,T
j
=125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
= 600 V, T
j
= 125 °C
V
GE
= ±20 V
V
CE
= 15 V
,
I
C
= 3 A
2.9
5.75
50
5
±100
3
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic electrical characteristics
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
Min.
Typ. Max.
208
32.5
5.4
12
2.6
4.9
Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
= 390 V, I
C
= 3 A,
V
GE
= 15 V
(see Figure 17)
-
-
-
-
4/18
Doc ID 15536 Rev 2
STGBL6NC60DI, STGDL6NC60DI, STGPL6NC60DI, STGFL6NC60DI
Electrical characteristics
Table 6.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test conditions
V
CC
= 390 V, I
C
= 3 A
,
R
G
= 10
Ω
V
GE
= 15 V
(see Figure 18)
V
CC
= 390 V, I
C
= 3 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Tj =125 °C
(see Figure 18)
V
CC
= 390 V, I
C
= 3 A,
,
R
GE
= 10
Ω
V
GE
= 15 V
(see Figure 18)
V
CC
= 390 V, I
C
= 3 A,
,
R
GE
= 10
Ω
V
GE
=15 V,
Tj = 125 °C
(see Figure 18)
Min.
Typ.
6.7
3.7
930
6.5
4
820
17
46
47
35
67
55
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
-
-
-
-
-
-
-
-
Table 7.
Symbol
E
on (1)
E
off(2)
E
ts
E
on (1)
E
off(2)
E
ts
1.
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390 V, I
C
= 3 A
R
G
= 10
Ω
V
GE
=15 V
,
(see Figure 18)
V
CC
= 390 V, I
C
= 3 A
,
R
G
= 10
Ω
V
GE
= 15 V,
Tj = 125 °C
(see Figure 18)
Min.
Typ.
32
24
56
51
46
97
Max.
Unit
µJ
µJ
µJ
µJ
µJ
µJ
-
-
-
-
Eon is the turn-on losses when a typical diode is used in the test circuit in
(see Figure 19).
If the IGBT is
offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs and diode
are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter
Test conditions
I
F
= 1 A
I
F
= 3 A
I
F
= 3 A, Tj=125 °C
I
F
= 3 A, V
R
= 40 V,
di/dt = 100 A/µs
(see Figure 19)
I
F
= 3 A,V
R
= 40 V,
T
j
=125 °C, di/dt = 100 A/µs
(see Figure 19)
Min.
Typ.
Max.
1.7
-
1.8
1.3
23
21
1.5
47
51
2
Unit
V
V
V
ns
nC
A
ns
nC
A
V
F
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
-
Doc ID 15536 Rev 2
5/18
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
