ISL9K8120P3
May 2002
ISL9K8120P3
8A, 1200V Stealth™ Dual Diode
General Description
The ISL9K8120P3 is a Stealth™ dual diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49413
.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 5.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 32ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
JEDEC TO-220AB
Symbol
K
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
A
1
A
2
Device Maximum Ratings (per leg)
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 105 C)
Total Device Current (Both Legs)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
o
Ratings
1200
1200
1200
8
16
16
100
71
20
-55 to 150
300
260
Units
V
V
V
A
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A
ISL9K8120P3
Package Marking and Ordering Information
Device Marking
K8120P3
Device
ISL9K8120P3
Package
TO-220AB
Tape Width
N/A
Quantity
50
Electrical Characteristics (per leg)
T
C
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 1200V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 8A
T
C
= 25°C
T
C
= 125°C
-
-
2.8
2.7
3.3
3.1
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
30
-
pF
Switching Characteristics
t
rr
t
rr
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 30V
I
F
= 8A, dI
F
/dt = 100A/µs, V
R
= 30V
I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 780V, T
C
= 25°C
I
F
= 8A,
dI
F
/dt = 200A/µs,
V
R
= 780V,
T
C
= 125°C
I
F
= 8A,
dI
F
/dt = 1000A/µs,
V
R
= 780V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
35
300
4.3
525
375
9
5.5
1.1
200
5.5
11
1.2
310
32
44
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
µC
ns
-
A
µC
A/µs
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
TO-220
-
-
-
-
1.75
62
°C/W
°C/W
Thermal Resistance Junction to Ambient TO-220
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A
ISL9K8120P3
Typical Performance Curves (per leg)
20
18
I
R
, REVERSE CURRENT (µA)
I
F
, FORWARD CURRENT (A)
16
14
12
10
8
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
25
o
C
125
o
C
150
o
C
100
125
o
C
10
100
o
C
75
o
C
1
1000
150
o
C
0.1
25
o
C
0.01
200
300
400
500
600
700
800
900 1000 1100 1200
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500
450
400
t, RECOVERY TIMES (ns)
V
R
= 780V, T
C
= 125
o
C
t
b
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
Figure 2. Reverse Current vs Reverse Voltage
500
450
400
t, RECOVERY TIMES (ns)
350
300
250
200
150
100
t
b
AT I
F
= 16A, 8A, 4A
V
R
= 780V, T
C
= 125
o
C
350
300
250
200
150
100
50
0
0
2
4
10
6
8
12
I
F
, FORWARD CURRENT (A)
14
16
t
a
AT dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
50
0
200
t
a
AT I
F
= 16A, 8A, 4A
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. t
a
and t
b
Curves vs Forward Current
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
14
13
12
11
10
9
8
7
6
5
4
0
2
4
6
8
10
12
14
16
I
F
, FORWARD CURRENT (A)
dI
F
/dt = 200A/µs
dI
F
/dt = 800A/µs
V
R
= 780V, T
C
= 125
o
C
16
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
V
R
= 780V, T
C
= 125
o
C
14
I
F
= 16A
dI
F
/dt = 600A/µs
12
I
F
= 8A
10
I
F
= 4A
8
6
4
100
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A
ISL9K8120P3
Typical Performance Curves (per leg) (Continued)
12
S, REVERSE RECOVERY SOFTNESS FACTOR
11
I
F
= 16A
10
9
8
7
6
5
4
3
2
100
I
F
= 4A
I
F
= 8A
Q
RR
, REVERSE RECOVERED CHARGE (nC)
V
R
= 780V, T
C
= 125
o
C
2000
1800
1600
1400
1200
1000
800
600
400
100
I
F
= 4A
I
F
= 8A
V
R
= 780V, T
C
= 125
o
C
I
F
= 16A
200
900
300
400
500
600
700
800
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
1000
200
300
400
500
600
700
800
900
1000
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
500
f = 1MH
Z
C
J
, JUNCTION CAPACITANCE (pF)
400
Figure 8. Reverse Recovered Charge vs dI
F
/dt
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
-4.4
I
F
= 8A, V
R
= 780V, dI
F
/dt = 200A/µs
500
-4.8
I
RM(REC)
450
300
-5.2
400
200
-5.6
t
RR
350
100
0
0.03
0.1
1
10
100
-6.0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
300
150
V
R
, REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse
Voltage
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 10. Reverse Recovery Current and Times
vs Case Temperature
8
6
4
2
0
90
100
110
120
130
140
150
T
C
, CASE TEMPERATURE (
o
C)
Figure 11. DC Current Derating Curve
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A
t
RR
, RECOVERY TIMES (ns)
ISL9K8120P3
Typical Performance Curves (per leg) (Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1.0
THERMAL IMPEDANCE
Z
θJA
, NORMALIZED
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
I
F
DUT
R
G
CURRENT
SENSE
+
MOSFET
V
DD
0
0.25 I
RM
I
RM
dI
F
dt
t
a
t
rr
t
b
V
GE
t
1
t
2
-
Figure 13. It
rr
Test Circuit
Figure 14. t
rr
Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
V
DD
= 50V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage
Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9K8120P3 Rev. A
嵌入式系统
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