Si1300BDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
20
±8
0.4
0.32
0.37
b, c
0.30
b, c
0.5
0.18
0.14
b, c
0.2
0.14
0.19
0.12
b, c
- 55 to 150
°C
W
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 360 °C/W.
t
5s
Steady State
Symbol
R
thJA
R
thJF
Typical
540
450
Maximum
670
570
Unit
°C/W
Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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Si1300BDL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
I
S
I
SM
V
SD
I
S
= 0.05 A
0.7
T
C
= 25 °C
0.18
0.4
1.2
A
V
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 25
I
D
0.4 A, V
GEN
= 4.5 V, R
g
= 1
f = 1 MHz
1.5
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.4
V
DS
= 10 V, V
GS
= 2.5 V, I
D
= 0.35
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
35
13
4
560
335
98
85
7
7
10
8
7
12
12
15
13
12
ns
840
503
pC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 4.5 V
V
DS
5
V, V
GS
= 2.5 V
V
GS
= 4.5 V, I
D
= 0.25
V
GS
= 2.5 V, I
D
= 0.15
0.4
0.12
0.65
0.85
0.85
1.08
0.4
20
20
- 2.8
1.0
± 100
100
5
V
mV/°C
V
nA
nA
µA
A
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300
µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1300BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.25
V
GS
= 10 V thru 2.5 V
1.00
I
D
- Drain Current (A)
V
GS
= 2.0 V
0.6
0.75
V
GS
= 1.5 V
I
D
- Drain Current (A)
0.8
0.4
0.50
0.2
0.25
T
A
= 25 °C
T
A
= 125 °C
V
GS
= 1.0 V
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.0
0.5
1.0
T
A
= - 55 °C
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
2.0
Transfer Characteristics Curves vs. Temperature
50
R
DS(on)
- On-Resistance ()
40
C - Capacitance (pF)
1.5
C
iss
30
1.0
V
GS
= 2.5 V
20
C
oss
10
C
rss
0.5
V
GS
= 4.5 V
0.0
0.0
0
0.25
0.50
0.75
1.00
1.25
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-Source Voltage (V)
On-Resistance vs. Drain Current
5
I
D
= 0.4 A
V
GS
- Gate-to-Source Voltage (V)
4
V
DS
= 10 V
R
DS(on)
- On-Resistance
1.4
1.6
I
D
= 0.25 A
Capacitance
3
(Normalized)
1.2
2
V
DS
= 16 V
1.0
1
0.8
0
0
150
300
450
600
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (pC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1300BDL
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
5.0
I
S
- Source Current (A)
1
T
J
= 150 °C
0.1
R
DS(on)
- On-Resistance ()
4.0
T
J
= 25 °C
3.0
2.0
T
A
= 125 °C
1.0
T
A
= 25 °C
0.01
0.001
0.0
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Forward Diode Voltage vs. Temperature
1.0
0.9
0.8
I
D
= 250 µA
Power (W)
V
GS(th)
(V)
0.7
0.6
0.5
0.4
2
0.3
0.2
- 50
0
0.001
6
8
10
R
DS(on)
vs. V
GS
vs. Temperature
T
A
= 25 °C
4
- 25
0
25
50
75
100
125
150
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
10
Single Pulse Power, Junction-to-Ambient
I
D
- Drain Current (A)
1
Limited by R
DS(on)
*
10 µs, 100 µs
1 ms
10 ms
100 ms
1s
10 s
100 s
BVDSS Limited
0.1
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
* V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
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Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?73557.
Document Number: 73557
S11-2000-Rev. D, 10-Oct-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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