STTH60L06TV
Turbo 2 ultrafast high voltage rectifier
Main product characteristics
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(typ)
2 x 40 A
600 V
150° C
1.30 V
50 ns
A1 K1
A1 K2
A2 K2
STTH60L06TV1
K1
A2
STTH60L06TV2
A1
K2
K1
Features and benefits
■
■
■
■
■
A1
K1
A2
K2
Ultrafast switching
Low reverse current
Low thermal resistance
Reduces switching & conduction losses
Insulated package:
Electrical insulation = 2500 V
RMS
Capacitance = 45 pF
A2
ISOTOP
Description
The STTH60L06TV, which is using ST Turbo 2
600V technology, is specially suited for use in
switching power supplies, and industrial
applications (such as welding), as rectification
diode.
Table 1.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
RMS forward current
Average forward current,
δ
= 0.5
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Order codes
Part Number
STTH60L06TV1
STTH60L06TV2
Marking
STTH60L06TV1
STTH60L06TV2
Absolute ratings (limiting values per diode at 25° C, unless otherwise specified)
Parameter
Value
600
100
T
c
= 75° C per diode
T
c
= 70° C per diode
t
p
= 10 ms Sinusoidal
30
40
210
-55 to + 150
150
A
°C
°C
Unit
V
A
A
October 2006
Rev 3
1/7
www.st.com
Characteristics
STTH60L06TV
1
Table 2.
Characteristics
Thermal parameters
Symbol
R
th(j-c)
R
th(c)
Parameter
Per diode
Junction to case
Total
Coupling thermal resistance
0.85
0.1
°C/W
Value
1.60
Unit
When the diodes are used simultaneously:
∆T
j(diode1)
= P
(diode1)
x
R
th(j-c)
(per diode) + P
(diode2)
x
R
th(c)
Table 3.
Symbol
I
R(1)
V
F(2)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Test conditions
T
j
= 25° C
T
j
= 125° C
Forward voltage drop
T
j
= 25° C
T
j
= 150° C
V
R
= V
RRM
Min.
Typ
Max.
25
µA
25
250
1.55
I
F
= 60 A
V
1.0
1.25
Unit
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 0.95 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Table 4.
Symbol
Dynamic characteristics (per diode)
Parameter
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A
I
R
= 1 A, T
j
= 25° C
I
F
= 1 A, dI
F
/dt = 50 A/µs,
V
R
= 30 V, T
j
= 25° C
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
V
R
= 400 V, T
j
= 125° C
I
F
= 30 A
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
I
F
= 30 A, dI
F
/dt = 100 A/µs,
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
2.5
65
11.5
Min.
Typ
Max.
65
ns
90
16
500
A
ns
V
Unit
t
rr
Reverse recovery time
I
RM
t
fr
V
FP
2/7
STTH60L06TV
Characteristics
Figure 1.
P(W)
80
Conduction losses versus
average current (per diode)
δ
= 0.1
Figure 2.
I
FM
(A)
100
Forward voltage drop versus
forward current (per diode)
70
60
50
40
30
20
10
δ
= 0.2
δ
= 0.5
90
80
70
T
j
=150°C
(maximum values)
δ
= 0.05
δ
=1
60
50
40
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
T
30
20
I
F(AV)
(A)
0
0
10
20
30
δ
=tp/T
40
tp
50
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
FM
(V)
1.4
1.6
1.8
2.0
2.2
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
25
0.5
20
0.4
0.3
15
45
40
35
30
I
RM
(A)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
T
0.2
0.1
Single pulse
10
5
t
p
(s)
1.E-02
1.E-01
0.0
1.E-03
δ
=tp/T
1.E+00
tp
0
1.E+01
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 5.
t
rr
(ns)
800
700
600
Reverse recovery time versus
dI
F
/dt (typical values, per diode)
V
R
=400V
T
j
=125°C
Figure 6.
Q
rr
(nC)
3500
V
R
=400V
T
j
=125°C
Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
3000
I
F
=2 x I
F(AV)
I
F
=2 x I
F(AV)
2500
2000
I
F
=I
F(AV)
500
400
300
200
100
1000
500
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
1500
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
3/7
Characteristics
STTH60L06TV
Figure 7.
Reverse recovery softness factor
versus dI
F
/dt (typical values, per
diode)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
S factor
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.2
I
F
< 2 x I
F(AV)
V
R
=400V
T
j
=125°C
1.4
S factor
1.2
1.0
0.8
Q
RR
0.6
t
rr
0.4
I
RM
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
T
j
(°C)
dI
F
/dt(A/µs)
0.0
25
0
50
100
150
200
250
300
350
400
450
500
50
75
100
125
0.0
Figure 9.
Transient peak forward voltage
versus dI
F
/dt (typical values, per
diode)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values, per diode)
t
fr
(ns)
450
400
350
300
250
200
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
V
FP
(V)
10
9
8
7
6
5
4
3
2
1
0
0
50
100
150
I
F
=I
F(AV)
T
j
=125°C
150
100
50
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
100
V
R
(V)
10
1
10
100
1000
4/7
STTH60L06TV
Package mechanical data
2
Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Table 5.
ISOTOP dimensions
DIMENSIONS
REF.
Millimeters
Min.
A
A1
B
C
C2
D
D1
E
E1
E2
G
G1
G2
F
F1
P
P1
S
11.80
8.90
7.8
0.75
1.95
37.80
31.50
25.15
23.85
Max
12.20
9.10
8.20
0.85
2.05
38.20
31.70
25.50
24.15
Inches
Min.
0.465
0.350
0.307
0.030
0.077
1.488
1.240
0.990
0.939
Max.
0.480
0.358
0.323
0.033
0.081
1.504
1.248
1.004
0.951
24.80 typ.
14.90
12.60
3.50
4.10
4.60
4.00
4.00
30.10
15.10
12.80
4.30
4.30
5.00
4.30
4.40
30.30
0.976 typ.
0.587
0.496
0.138
0.161
0.181
0.157
0.157
1.185
0.594
0.504
0.169
0.169
0.197
0.69
0.173
1.193
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
5/7
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