AUTOMOTIVE GRADE
AUIRFI4905
HEXFET
®
Power MOSFET
D
Features
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET
®
Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed an ruggedized device design that
HEXFET Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
Base Part Number
AUIRFI4905
Absolute Maximum Ratings
TO-220 Full-Pak
Package Type
V
DSS
R
DS(on)
max.
-55V
20m
-39A
G
S
I
D (Silicon Limited)
D
G
D
S
TO-220 Full-Pak
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRFI4905
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C (Bottom)
= 25°C
I
D
@ T
C (Bottom)
= 100°C
I
DM
P
D
@T
C
(Bottom)
= 25°C
V
GS
E
AS
I
AR
E
AR
T
J
T
STG
Thermal Resistance
Symbol
R
JC
R
JA
Junction-to-Case
Junction-to-Ambient
Parameter
Typ.
–––
–––
Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
Continuous Drain Current, V
GS
@ -10V (Silicon Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Max.
-39
-27
-155
55
0.37
± 20
1247
See Fig. 14, 15, 22a, 22b
-55 to + 175
Units
A
W
W/°C
V
mJ
A
°C
Max.
2.73
65
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification
standards can be found at
http://www.irf.com/
1
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© 2015 International Rectifier
Submit Datasheet Feedback
April 20, 2015
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
––– -0.049 –––
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
–––
–––
20
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
-2.0
––– -4.0
gfs
Forward Transconductance
17
–––
–––
–––
–––
-25
Drain-to-Source Leakage Current
I
DSS
–––
––– -250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Q
g
Total Gate Charge
–––
110
165
Q
gs
Gate-to-Source Charge
–––
18
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
51
–––
t
d(on)
Turn-On Delay Time
–––
14
–––
t
r
Rise Time
–––
45
–––
t
d(off)
Turn-Off Delay Time
–––
71
–––
Fall Time
–––
61
–––
t
f
L
D
Internal Drain Inductance
–––
4.5
–––
L
S
Internal Source Inductance
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
2.8
64
164
7.5
3560
1290
480
Max.
-39
-155
-1.6
–––
–––
–––
–––
–––
–––
–––
AUIRFI4905
Units
V
V/°C
m
V
S
µA
nA
Units
Conditions
V
GS
= 0V, I
D
= -250µA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -10V, I
D
= -23A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -10V, I
D
= -23A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
dv/dt
Peak Diode Recovery
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
I
D
= -23A
nC V
DS
= -44V
V
GS
= -10V
V
DD
= -28V
ns I
D
= -23A
R
G
= 2.7
V
GS
= -10V
Between lead,
nH 6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
pF V
DS
= -25V
ƒ = 1.0 MHz
Units
Conditions
D
MOSFET symbol
A
showing the
G
integral reverse
A
S
p-n junction diode.
V T
J
= 25°C, I
S
= -23A, V
GS
= 0V
V/ns T
J
= 175°C, I
S
= -23A, V
DS
= -55V
ns
nC
T
J
= 25°C, I
F
= -23A, V
R
= -28V
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 4.7mH, R
G
= 50, I
AS
= -23A, V
GS
=-10V.
SD
-23A, di/dt
1026A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
I
Pulse width
400µs; duty cycle
2%.
is measured at T
J
approximately 90°C.
R
2
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April 20, 2015
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
AUIRFI4905
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
100
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
-4.5V
10
-4.5V
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
1000
Gfs, Forward Transconductance (S)
Fig. 2
Typical Output Characteristics
40
T J = 25°C
30
-I D, Drain-to-Source Current (A)
100
T J = 25°C
T J = 175°C
10
20
T J = 175°C
1
VDS = -25V
60µs
PULSE WIDTH
0.1
0
2
4
6
8
10
12
10
V DS = -5.0V
0
0
10
20
30
40
50
60
70
80
-I D,Drain-to-Source Current (A)
-V GS, Gate-to-Source Voltage (V)
Fig. 3
Typical Transfer Characteristics
1000
Fig. 4
Typical Forward Transconductance vs Drain Current
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I SD, Reverse Drain Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = -39A
VGS = -10V
100
T J = 175°C
10
T J = 25°C
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V SD, Source-to-Drain Voltage (V)
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig. 5
Typical Source-to-Drain Diode
Forward Voltage
3
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© 2015 International Rectifier
Fig. 6
Normalized On-Resistance vs. Temperature
Submit Datasheet Feedback
April 20, 2015
100000
14.0
ID= -23A
AUIRFI4905
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
-V GS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
VDS= -44V
VDS= -28V
VDS= -11V
C, Capacitance (pF)
10000
Ciss
Coss
1000
Crss
100
1
10
-V DS, Drain-to-Source Voltage (V)
100
0
25
50
75
100
125
150
QG Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
40
-I D, Drain-to-Source Current (A)
100µsec
1msec
10msec
-I D, Drain Current (A)
100
30
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Safe Operating Area
10
Thermal Response ( Z thJC ) °C/W
Fig 10.
Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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April 20, 2015
5000
4.5
AUIRFI4905
EAS , Single Pulse Avalanche Energy (mJ)
-V GS(th) , Gate threshold Voltage (V)
ID
TOP
-8.8A
-13A
BOTTOM -23A
4000
4.0
3.5
3.0
2.5
2.0
1.5
ID = -250µA
ID = -1.0mA
ID = -1.0A
3000
2000
1000
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
Fig 12.
Maximum Avalanche Energy vs. Drain Current
100
Fig 13.
Threshold Voltage vs. Temperature
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj
= 150°C and
Tstart =25°C (Single Pulse)
-Avalanche Current (A)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j
= 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
tav (sec)
Fig 14.
Typical Avalanche Current vs. Pulse Width
1400
1200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = -23A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
T/ Z
thJC
I
av
= 2
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
EAR , Avalanche Energy (mJ)
1000
800
600
400
200
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 15.
Maximum Avalanche Energy vs. Temperature
5
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April 20, 2015
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