VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Output rectification
TO-247AC modified
TO-247AC
Base
common
cathode
2
Available
• Designed and qualified
JEDEC
®
-JESD 47
according
to
Base
common
cathode
2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
BENEFITS
• Reduced RFI and EMI
1
Cathode
3
Anode
Anode
1
Anode
3
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
VS-60EPU02PbF
VS-60EPU02-N3
VS-60APU02PbF
VS-60APU02-N3
DESCRIPTION / APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AC modified (2 pins),
TO-247AC
60 A
200 V
0.81 V
See Recovery table
175 °C
Single die
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Operating junction and storage temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
I
FRM
T
J
, T
Stg
T
C
= 127 °C
T
C
= 25 °C
Square wave, 20 kHz
TEST CONDITIONS
VALUES
200
60
800
120
-55 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 60 A
I
F
= 60 A, T
J
= 175 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.98
0.81
-
-
87
8.0
MAX.
-
1.08
0.88
50
2
-
-
μA
mA
pF
nH
V
UNITS
Revision: 17-Oct-16
Document Number: 94021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
TYP.
-
28
50
4
8
59
220
MAX.
35
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AC modified
Case style TO-247AC
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
-
0.2
5.5
0.2
-
60EPU02
60APU02
MAX.
0.70
K/W
-
-
-
1.2
g
oz.
N
m
UNITS
Revision: 17-Oct-16
Document Number: 94021
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
1000
1000
Vishay Semiconductors
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
T
J
= 175 °C
T
J
= 125 °C
I
F
- Instantaneous
Forward Current (A)
100
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
1
0
0.5
1
1.5
2
2.5
0
50
100
150
200
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
10
0
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
P
DM
t
1
t
2
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
.
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 17-Oct-16
Document Number: 94021
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
180
70
60
50
DC
Vishay Semiconductors
I
F
= 90 A
I
F
= 60 A
I
F
= 30 A
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
0
20
40
60
80
100
See note (1)
Square wave (D = 0.50)
80 % rated V
R
applied
t
rr
(ns)
40
30
20
10
0
100
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
RMS limit
dI
F
/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
800
700
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
Average Power Loss (W)
80
600
500
400
300
200
100
0
100
40
20
DC
0
0
20
40
60
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
80
100
Q
rr
(nC)
60
I
F
= 30 A
I
F
= 60 A
I
F
= 90 A
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 17-Oct-16
Document Number: 94021
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-60EPU02PbF, VS-60EPU02-N3, VS-60APU02PbF, VS-60APU02-N3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 17-Oct-16
Document Number: 94021
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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