Specification Comparison
Vishay Siliconix
Si6463BDQ vs. Si6463DQ
Description:
Package:
Pin Out:
P-Channel, 1.8 V (G-S) MOSFET
TSSOP-8
Identical
Part Number Replacements
Si6463BDQ-T1-E3 Replaces Si6463DQ-T1-E3
Si6463BDQ-T1 Replaces Si6463DQ-T1
Summary of Performance
The Si6463BDQ is the replacement to the original Si6463DQ; both parts perform identically, including limits to the parametric tables below.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
and T
stg
R
thJA
Si6463BDQ
- 20
±8
- 7.4
- 5.9
- 30
- 1.35
1.5
1.0
- 55 to 150
83
Si6463DQ
- 20
± 12
- 6.5
- 5.2
- 30
- 1.5
1.5
1.0
- 55 to 150
83
Unit
V
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
T
A
= 25 °C
Power Dissipation
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A
W
°C
°C/W
SPECIFICATIONS (T
J
= 25 °C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
V
GS
= - 10 V
V
GS
= - 4.5 V
V
GS
= - 4.5 V
V
GS
= - 2.5 V
V
GS
= - 1.8 V
Symbol
Si6463BDQ
Min
- 0.45
Typ
Max
- 0.8
± 100
-1
Min
- 0.6
± 100
-1
- 20
- 10
0.011
0.015
0.020
34
- 0.64
40
5.2
8
35
40
190
90
75
0.015
0.020
0.027
- 1.1
60
0.015
0.022
NS
26
- 0.65
33
7.5
7.5
24
26
120
65
40
0.020
0.030
Si6463DQ
Typ
Max
Unit
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
nA
µA
A
Ω
S
V
NS
- 20
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Charge
Gate-Source Charge
Gate-Drain Charge
Switching
Turn-On Time
Turn-Off Time
r
DS(on)
g
fs
V
SD
Q
g1
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
- 1.1
60
nC
Source-Drain Reverse Recovery Time
NS denotes parameter not specified
55
60
300
150
120
50
50
200
110
60
ns
1. For the Si6463BDQ, V
GS
= 5 V. For the Si6463DQ, V
GS
= 4.5 V.
Document Number: 74227
Revision: 15-May-06
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