BUH51
SWITCHMODEt NPN Silicon
Planar Power Transistor
The BUH51 has an application specific state−of−art die designed for
use in 50 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
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•
Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
•
Epoxy Meets UL 94 V−0 @ 0.125 in
•
ESD Ratings:
Machine Model, C
Human Body Model, 3B
POWER TRANSISTOR
3.0 AMPERE
800 VOLTS
50 WATTS
w
This device is available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
3
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
CM
I
BM
P
D
T
J
, T
stg
I
B
I
C
Value
500
800
800
10
3.0
8.0
2.0
4.0
50
0.4
– 65 to
150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
Y
WW
2 1
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
−
Peak (Note 1)
Base Current
−
Continuous
Base Current
−
Peak (Note 1)
*Total Device Dissipation @ T
C
= 25_C
*Derate above 25°C
Operating and Storage Temperature
TO−225
CASE 77
STYLE 3
MARKING DIAGRAM
1 BASE
2 COLLECTOR
3 EMITTER
YWW
BUH51
= Year
= Work Week
ORDERING INFORMATION
Device
BUH51
Package
TO−225
Shipping
500 Units/Box
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
R
θJC
R
θJA
T
L
2.5
100
260
_C/W
_C/W
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
©
Semiconductor Components Industries, LLC, 2006
March, 2006
−
Rev. 5
1
Publication Order Number:
BUH51/D
BUH51
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
Collector−Base Breakdown Voltage
(I
CBO
= 1.0 mA)
Emitter−Base Breakdown Voltage
(I
EBO
= 1.0 mA)
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0
Collector Cutoff Current
(V
CE
= Rated V
CES
, V
EB
= 0)
Collector Base Current
(V
CB
= Rated V
CBO
, V
EB
= 0
Emitter−Cutoff Current
(V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 1.0 Adc, I
B
= 0.2 Adc)
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 5.0 Vdc)
DC Current Gain
(I
C
= 0.8 Adc, V
CE
= 5.0 Vdc)
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 3.0
ms
after rising I
B1
reaches
90% of final I
B1
I
C
= 1.0 Adc, I
B1
= 0.2 Adc
V
CC
= 300 V
I
C
= 2.0 Adc, I
B1
= 0.4 Adc
V
CC
= 300 V
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
f
T
C
ob
C
ib
V
CE(dsat)
−
−
−
−
−
−
−
1.7
6.0
5.1
15
23
34
200
−
−
−
−
−
100
500
V
V
V
V
MHz
pF
pF
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
V
BE(sat)
V
CE(sat)
h
FE
−
−
−
−
8.0
6.0
5.0
4.0
10
8.0
14
18
0.92
0.8
0.3
0.32
10
8.0
7.5
6.2
14
13
20
25
1.1
−
0.5
0.6
−
−
−
−
−
−
−
−
Vdc
Vdc
−
−
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
V
CEO(sus)
V
CBO
V
EBO
I
CEO
I
CES
I
CBO
I
EBO
500
800
10
−
−
−
−
−
−
550
950
12.5
−
−
−
−
−
−
−
−
−
100
100
1000
100
1000
100
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 1.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 8.0 Vdc, f = 1.0 MHz)
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2
BUH51
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Turn−on Time
Turn−off Time
Turn−on Time
Turn−off Time
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
I
C
= 1.0 Adc
I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
I
C
= 2.0 Adc
I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
@ T
C
= 25°C
@ T
C
= 125°C
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
t
on
t
off
t
on
t
off
Min
−
−
−
−
−
−
−
−
Typ
110
125
3.5
4.1
700
1250
1.75
2.1
Max
150
−
4.0
−
1000
−
2.0
−
Unit
ns
ms
ns
ms
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
≤
10%, Pulse Width = 40
ms)
I
C
= 1.0 Adc, I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
V
CC
= 300 Vdc
I
C
= 2.0 Adc, I
B1
= 0.4 Adc
I
B2
= 0.4 Adc
V
CC
= 300 Vdc
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
Storage Time
Crossover Time
Fall Time
Storage Time
Crossover Time
t
fi
t
si
t
c
t
fi
t
si
t
c
−
−
−
−
−
−
−
−
−
−
−
−
200
320
3.4
4.0
350
640
140
300
2.3
2.8
400
725
300
−
3.75
−
500
−
200
−
2.75
−
600
−
ns
ms
ns
ns
ms
ns
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 1 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= 125°C
T
J
= 125°C
100
V
CE
= 3 V
10
T
J
= −20°C
T
J
= 25°C
10
T
J
= −20°C
T
J
= 25°C
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. DC Current Gain @ 1.0 V
Figure 2. DC Current Gain @ 3.0 V
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3
BUH51
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 5 V
hFE , DC CURRENT GAIN
VCE , VOLTAGE (VOLTS)
10
I
C
/I
B
= 5
T
J
= 125°C
1
T
J
= 25°C
T
J
= −20°C
0.1
T
J
= 125°C
10
T
J
= −20°C
T
J
= 25°C
1
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0.01
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 3. DC Current Gain @ 5.0 V
Figure 4. Collector−Emitter Saturation Voltage
10
I
C
/I
B
= 10
VCE , VOLTAGE (VOLTS)
VBE , VOLTAGE (VOLTS)
1.5
I
C
/I
B
= 5
1
T
J
= −20°C
1
T
J
= −20°C
T
J
= 125°C
0.1
0.001
0.1
1
0.01
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 25°C
0.5
T
J
= 25°C
T
J
= 125°C
10
0
0.001
0.1
1
0.01
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 5. Collector−Emitter Saturation Voltage
Figure 6. Base−Emitter Saturation Region
1.5
I
C
/I
B
= 10
2
T
J
= 25°C
4A
VCE , VOLTAGE (VOLTS)
1.5
2A
1A
1
3A
VBE , VOLTAGE (VOLTS)
1
T
J
= −20°C
T
J
= 25°C
T
J
= 125°C
0.5
0.5
V
CE(sat)
(I
C
= 500 mA)
1
0.1
I
B
, BASE CURRENT (A)
10
0
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
0
0.01
Figure 7. Base−Emitter Saturation Region
Figure 8. Collector Saturation Region
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4
BUH51
TYPICAL STATIC CHARACTERISTICS
1000
T
J
= 25°C
f
(test)
= 1 MHz
C, CAPACITANCE (pF)
BVCER (VOLTS)
C
ib
1000
T
J
= 25°C
900
800
700
600
500
400
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
100
10
100
1000
R
BE
(Ω)
10000
100000
BVCER @ 10 mA
BVCER(sus) @ 200 mA, 25 mH
100
C
ob
10
Figure 9. Capacitance
Figure 10. Resistive Breakdown
TYPICAL SWITCHING CHARACTERISTICS
2500
2000
I
B1
= I
B2
V
CC
= 300 V
PW = 40
μs
I
C
/I
B
= 5
10
8
t, TIME (
μ
s)
I
B1
= I
B2
V
CC
= 300 V
PW = 40
μs
I
C
/I
B
= 5
t, TIME (ns)
1500
6
1000
4
500
0
T
J
= 125°C
T
J
= 25°C
0
1
2
I
C
, COLLECTOR CURRENT (AMPS)
3
2
0
T
J
= 125°C
T
J
= 25°C
0
1
2
I
C
, COLLECTOR CURRENT (AMPS)
3
Figure 11. Resistive Switching, t
on
7
I
C
/I
B
= 5
5
t, TIME (
μ
s)
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
μH
4
Figure 12. Resistive Switch Time, t
off
I
C
/I
B
= 10
3
t, TIME (
μ
s)
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
μH
2
3
1
T
J
= 125°C
T
J
= 25°C
1
0
2
1
I
C
, COLLECTOR CURRENT (AMPS)
3
T
J
= 125°C
T
J
= 25°C
0
0.5
1.5
1
I
C
, COLLECTOR CURRENT (AMPS)
2
Figure 13. Inductive Storage Time, t
si
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5
Figure 13 Bis. Inductive Storage Time, t
si
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