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IS43LR32160B: 产品描述DRAM 512M, 1.8v, Mobile DDR, 16Mx32; 产品类别存储; 文件大小1MB，共44页; 制造商ISSI(芯成半导体); 官网地址http://www.issi.com/

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DRAM 512M, 1.8v, Mobile DDR, 16Mx32

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)
产品种类 Product Category	DRAM
类型 Type	SDRAM Mobile - LPDDR1
Data Bus Width	32 bit
Organization	16 M x 32
封装 / 箱体 Package / Case	BGA-90
Memory Size	512 Mbit
电源电压-最大 Supply Voltage - Max	1.95 V
电源电压-最小 Supply Voltage - Min	1.7 V
安装风格 Mounting Style	SMD/SMT
工作电源电压 Operating Supply Voltage	1.8 V

	IS43LR32160B	IS46LR32160B-6BLA2-TR	IS43LR32160B-6BLI-TR
描述	DRAM 512M, 1.8v, Mobile DDR, 16Mx32	DRAM 512M (16Mx32) Mobile DDR 1.8v	DRAM 512M, 1.8V, 166Mhz 16Mx32 DDR Mobile
Product Attribute	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	ISSI(芯成半导体)	ISSI(芯成半导体)	ISSI(芯成半导体)
产品种类 Product Category	DRAM	DRAM	DRAM
类型 Type	SDRAM Mobile - LPDDR1	SDRAM Mobile - LPDDR1	SDRAM Mobile - LPDDR1
Data Bus Width	32 bit	32 bit	32 bit
Organization	16 M x 32	16 M x 32	16 M x 32
封装 / 箱体 Package / Case	BGA-90	BGA-90	BGA-90
Memory Size	512 Mbit	512 Mbit	512 Mbit
电源电压-最大 Supply Voltage - Max	1.95 V	1.95 V	1.95 V
电源电压-最小 Supply Voltage - Min	1.7 V	1.7 V	1.7 V
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
工作电源电压 Operating Supply Voltage	1.8 V	1.8 V	1.8 V
RoHS	-	Details	Details
Maximum Clock Frequency	-	166 MHz	166 MHz
Access Time	-	6 ns	6 ns
Supply Current - Max	-	110 mA	70 mA
最小工作温度 Minimum Operating Temperature	-	- 40 C	- 40 C
最大工作温度 Maximum Operating Temperature	-	+ 105 C	+ 85 C
系列 Packaging	-	Reel	Reel
Moisture Sensitive	-	Yes	Yes
工厂包装数量 Factory Pack Quantity	-	2500	2500

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