HMC320MS8G
/
320MS8GE
v02.0607
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
5
AMPLIFIERS - SMT
Typical Applications
The HMC320MS8G / HMC320MS8GE is ideal for:
• UNII
• HiperLAN
Features
Selectable Functionality:
LNA, Driver, or LO Buffer Amp
Adjustable Input IP3 Up to +10 dBm
+3V Operation
Ultra Small 8 Lead MSOP:
14.8 mm
2
x 1mm High
Functional Diagram
General Description
The HMC320MS8G & HMC320MS8GE are low cost
C-band fixed gain Low Noise Amplifiers (LNA). The
HMC320MS8G & HMC320MS8GE operate using a
single positive supply that can be set between +3V
and +5V. With +3V bias, the LNA provides a noise
figure of 2.5dB, 12dB gain and better than 10dB return
loss across the UNII band. The HMC320MS8G &
HMC320MS8GE also feature an adaptive baising that
allows the user to select the optimal P1dB performance
for their system using an external set resistor on the
“RES” pin. P1dB performance can be set between a
range of +1 dBm to +13dBm. The low cost LNA uses
an 8-leaded MSOP ground base surface mount plas-
tic package, which occupies less than 14.8mm
2
.
Electrical Specifications,
T
A
= +25° C, Vdd = +3V
Parameter
Low Power*
(VSET = 0V, Idd = 7 mA)
Min.
Frequency Range
Gain
Gain Variation over Temperature
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Input Third Order Intercept Point (IIP3)
Supply Current (Idd)
4
7
-4
-3
8
Typ.
5-6
10
0.025
±0.5
2.7
10
13
-1
1
7
3.8
4
10
6
4
16
0.035
8
Max.
Medium Power*
(VSET = 3V, Idd = 25 mA)
Min.
Typ.
5-6
12
0.025
±1.0
2.5
10
18
9
8
25
3.8
4
10
9
6
16
0.035
9
Max.
High Power*
(VSET = 3V, Idd = 40 mA)
Min.
Typ.
5-6
13
0.025
±1.5
2.6
10
20
12
10
40
3.8
16
0.035
Max.
GHz
dB
dB/°C
dB
dB
dB
dB
dBm
dBm
mA
Units
* R
BIAS
resistor value sets current. See adaptive biasing application note.
5 - 60
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC320MS8G
/
320MS8GE
v02.0607
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
Broadband Gain & Return Loss
Medium Power Bias
15
10
5
RESPONSE (dB)
0
-5
-10
-15
-20
-25
-30
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
FREQUENCY (GHz)
S11
S21
S22
Gain @ Three Bias Conditions
16
14
12
GAIN (dB)
10
8
6
4
2
0
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
Low Power Bias
Medium Power Bias
High Power Bias
5
AMPLIFIERS - SMT
Gain vs. Temperature
Medium Power Bias
16
14
12
GAIN (dB)
10
8
6
4
2
0
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
+25 C
+85 C
-40 C
Input Return Loss
@ Three Bias Conditions
0
INPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
Low Power Bias
Medium Power Bias
High Power Bias
Noise Figure vs. Temperature
Medium Power Bias
5
4.5
Output Return Loss
@ Three Bias Conditions
0
OUTPUT RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
Low Power Bias
Medium Power Bias
High Power Bias
4
NOISE FIGURE (dB)
3.5
3
2.5
2
1.5
1
0.5
0
4.5
5
5.5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
6
6.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 61
HMC320MS8G
/
320MS8GE
v02.0607
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
5
AMPLIFIERS - SMT
Noise Figure
@ Three Bias Conditions
5
4.5
4
NOISE FIGURE (dB)
Input IP3 @ Three Bias Conditions
15
13
11
INPUT IP3 (dBm)
9
7
5
3
1
-1
-3
Low Power Bias
Medium Power Bias
High Power Bias
3.5
3
2.5
2
1.5
1
0.5
0
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
Low Power Bias
Medium Power Bias
High Power Bias
-5
4.5
5
5.5
FREQUENCY (GHz)
6
6.5
Output 1dB Compression
@ Three Bias Conditions
15
13
11
9
P1dB (dBm)
7
5
3
1
-1
-3
-5
4.5
Low Power Bias
Medium Power Bias
High Power Bias
Reverse Isolation
@ Three Bias Conditions
0
REVERSE ISOLATION (dB)
-10
-20
-30
-40
-50
-60
Low Power Bias
Medium Power Bias
High Power Bias
5
5.5
FREQUENCY (GHz)
6
6.5
4
4.5
5
5.5
6
6.5
7
FREQUENCY (GHz)
5 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC320MS8G
/
320MS8GE
v02.0607
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
Adaptive Biasing
Optimizing P1dB Performance
The bias level may be changed to adjust the P1dB and return loss performance. The table below contains the HMC-
320MS8G RF performance as a function of various VSET and RBIAS settings. It will be necessary for the VSET
voltage source to provide 100uA of current to the amplifier. The Idd and Vdd quiescent performance will not change
as a function of changing the VSET voltage.
5
AMPLIFIERS - SMT
RF Performance at 5.8 GHz (Vdd = +3V)
VSET
(VDC)
0
3
3
3
RBIAS Resistor
Between Pin 3 and
GND (Ohms)
174
23
7
GND
(No Resistor)
Idd (mA)
7
25
40
60
Output
P1dB (dBm)
1.0
9.0
13.0
14.0
Output
Return Loss
(dB)
16.0
12.0
15.0
15.0
Applying the adaptive biasing
A dynamically controlled bias can be implemented with this design. A typical application wil include sens-
ing an RF signal level and then adjusting the VSET. The bias adjustment can be accomplished by either
analog or digitals means, after the RF signal has been detected and translated to a DC voltage using
external power detection circuitry.
Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 - 63
HMC320MS8G
/
320MS8GE
v02.0607
GaAs MMIC LOW NOISE
AMPLIFIER , 5.0 - 6.0 GHz
5
AMPLIFIERS - SMT
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Control Voltage Range (VSET)
RF Input Power (RFin)(Vdd = +3.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 2.98 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7.0 Vdc
0 to Vdd
+5 dBm
150 °C
0.194 W
336 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Truth Table
VSET
0V
3V
3V
Operating
Current Idd
7 mA
25 mA
40 mA
Operating
State
Low Power
Medium Power
High Power
Resistor Rbias
174 Ohm
23 Ohm
7 Ohm
Set external bias resistor (R
BIAS
) to achieve desired operat-
ing current, 0 < R
BIAS
< 200 Ohm.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
HMC320MS8G
HMC320MS8GE
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
[3]
H320
XXXX
H320
XXXX
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
5 - 64
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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