UFB60FA40P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
1
4
RoHS
COMPLIANT
• Optimized for power conversion: welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
2
3
• Direct mounting to heatsink
• UL E78996 approved
• Totally lead (Pb)-free
• Designed and qualified for industrial level
SOT-227
DESCRIPTION
The UFB60FA40P insulated modules integrate two state of
the art Vishay HPP ultrafast recovery rectifiers in the
compact, industry standard SOT-227 package. The planar
structure of the diodes, and the platinum doping life time
control, provide a ultrasoft recovery current shape, together
with the best overall performance, ruggedness and reliability
characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not to
be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
dc-to-dc converters. Their extremely optimized stored
charge and low recovery current reduce both over
dissipation in the switching elements (and snubbers) and
EMI/RFI.
PRODUCT SUMMARY
V
R
I
F(AV)
at T
C
= 90 °C
t
rr
400 V
60 A
46 ns
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
RMS isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 minute
TEST CONDITIONS
MAX.
400
30
A
250
64
2500
- 55 to 150
W
V
°C
UNITS
V
Document Number: 94521
Revision: 07-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
UFB60FA40P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
ELECTRICAL SPECIFICATIONS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode breakdown voltage
Forward voltage
SYMBOL
V
BR
V
FM
I
R
= 100 µA
I
F
=
30
A
I
F
=
30
A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 400 V
TEST CONDITIONS
MIN.
400
-
-
-
-
-
TYP.
-
1.13
0.93
-
-
68
MAX.
-
1.39
1.07
100
1.0
-
µA
mA
pF
V
UNITS
Reverse leakage current
Junction capacitance
I
RM
C
T
DYNAMIC RECOVERY CHARACTERISTICS PER DIODE
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 200 A/µs, V
R
=
30
V
Reverse recovery time
t
rr
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
=
30
A
dI
F
/dt = 200 A/µs
V
R
= 200 V
MIN.
-
-
-
-
-
-
-
TYP.
32
67
120
6.8
15
228
900
MAX.
46
-
-
-
A
-
-
nC
-
ns
UNITS
Reverse recovery charge
Q
rr
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case,
single leg conducting
Junction to case,
both leg conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
TEST CONDITIONS
MIN.
-
R
thJC
-
R
thCS
Flat, greased surface
-
-
-
-
0.05
30
1.3
0.95
K/W
-
-
-
g
Nm
TYP.
-
MAX.
1.9
UNITS
°C/W
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94521
Revision: 07-May-08
UFB60FA40P
Insulated Ultrafast
Rectifier Module, 60 A
Vishay High Power Products
100
1000
Reverse Current - I
R
(µA)
Tj = 150˚C
10
1
0.1
125˚C
25˚C
0.01
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
Instantaneous Forward Current - I
F
(A)
100
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 150˚C
Tj = 125˚C
Junction Capacitance - C
T
(pF)
1000
10
Tj = 25˚C
100
T = 25˚C
J
1
0
0.5
1
1.5
2
Forward Voltage Drop - V
FM
(V)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Diode)
10
Thermal Impedance Z
thJC
(°C/W)
Fig.
3
- Typical Junction Capacitance vs. Reverse Voltage
1
Single Pulse
(Thermal Impedance)
P
DM
t1
0.1
Notes:
1. Duty factor D = t1/ t2
t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Diode)
Document Number: 94521
Revision: 07-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
UFB60FA40P
Vishay High Power Products
Insulated Ultrafast
Rectifier Module, 60 A
150
If = 30A
Vrr = 100V
160
Allowable Case Temperature (°C)
140
130
120
DC
trr ( ns )
140
120
100
80
Square wave (D = 0.50)
Tj = 125˚C
110
100
90
80
60
Rated Vr applied
40
see note (1)
70
Tj = 25˚C
20
0
10
20
30
40
50
60
70
60
50
100
dI
F
/dt (A/µs )
Average Forward Current - I
F(AV)
(A)
1000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
2400
70
RMS Limit
Average Power Loss ( W )
2000
If = 30A
Vrr = 100V
Tj = 125˚C
60
50
DC
Qrr ( nC )
1600
40
30
20
10
0
0
10
20
30
40
50
60
70
Average Forward Current - I
F(AV)
(A)
1200
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
800
Tj = 25˚C
400
0
100
dI
F
/dt (A/µs )
1000
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
(1)
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94521
Revision: 07-May-08
UFB60FA40P
Insulated Ultrafast
Rectifier Module, 60 A
V
R
= 200 V
Vishay High Power Products
0.01
Ω
L = 70 µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94521
Revision: 07-May-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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