HMC-ALH140
v01.0108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Features
Noise Figure: 4 dB
Gain: 11.5 dB
P1dB Output Power: +15 dBm
Supply Voltage: +4V @ 60 mA
Die Size: 2.5 x 1.4 x 0.1 mm
1
LOW NOISE AMPLIFIERS - CHIP
Typical Applications
This HMC-ALH140 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT
• SATCOM
Functional Diagram
General Description
The HMC-ALH140 is a two Stage GaAs MMIC HEMT
Low Noise Amplifier die which operates between
24 and 40 GHz. The amplifier provides 11.5 dB of
gain, from a bias supply of +4V @ 60 mA with
a noise figure of 4 dB. The HMC-ALH140 amplifier
die is ideal for integration into Multi-Chip-Modules
(MCMs) due to its small size (3.5 mm2).
Electrical Specifi cations
,
T
A
= +25° C, Vdd= 4V
[1]
, Idd = 60mA
[2]
Parameter
Frequency Range
Gain
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression
Supply Current (Idd)
10
Min.
Typ.
24 - 30
12
4
13
15
15
60
100
10
Max.
Min.
Typ.
24 - 40
11.5
4
13
15
15
60
100
10
Max.
Min.
Typ.
35 - 40
11.5
4
20
20
15
60
100
dB
dB
dBm
mA
Max.
Units
GHz
dB
[1] Unless otherwise indicated, all measurements are from probed die
[2] Adjust Vgg between -1V to +0.3V (Typ. -0.2V) to achieve Idd
total
= 60 mA
1 - 120
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH140
v01.0108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Linear Gain vs. Frequency
14
12
Noise Figure vs. Frequency
5
1
LOW NOISE AMPLIFIERS - CHIP
4
10
GAIN (dB)
8
6
4
2
0
20
25
30
35
40
45
FREQUENCY (GHz)
0
35
36
37
38
39
40
FREQUENCY (GHz)
NOISE FIGURE (dB)
RETURN LOSS (dB)
20
25
30
35
40
45
3
2
1
Input Return Loss vs. Frequency
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
FREQUENCY (GHz)
Output Return Loss vs. Frequency
0
-5
-10
-15
-20
-25
-30
20
25
30
35
40
45
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 12
HMC-ALH140
v01.0108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage
Gate Bias Voltage
RF Input Power
Channel Temperature
Storage Temperature
+5.5 Vdc
-1 to +0.3 Vdc
6 dBm
180 °C
-65 to +150 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information
[1]
Standard
WP - 10
Alternate
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 122
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH140
v01.0108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
Pad Descriptions
Pad Number
1
Function
RFIN
Description
This pad is AC coupled and matched to
50 Ohms.
Interface Schematic
1
Power Supply Voltage for the amplifier. See assembly for
required external components.
2, 6
Vdd
3, 5
Vgg
Gate control for amplifier. Please follow “MMIC Amplifier Bias-
ing Procedure” application note. See assembly for required
external components.
This pad is AC coupled and matched to
50 Ohms.
4
RFOUT
Die bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 12
LOW NOISE AMPLIFIERS - CHIP
HMC-ALH140
v01.0108
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 24 - 40 GHz
1
LOW NOISE AMPLIFIERS - CHIP
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.10 Ohms
Note 3: Gate bond pads (VG) exist on the upper & lower sides of the MMIC for assembly convenience. For best performance the
unused pad should be attached to a 100pF cap to ground, but is not required.
1 - 124
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
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