Si9947DY
Dual P-Channel Enhancement-Mode MOSFET
Product Summary
V
DS
(V)
–20
r
DS(on)
(W)
0.10 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
I
D
(A)
"3.5
"2.5
Recommended upgrade: Si4947DY or Si4953DY
Lower profile/smaller size—see LITE FOOTR equivalent: Si6955DQ
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
D
1
P Channel MOSFET
D
2
D
2
P Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–20
"20
"3.5
"2.5
"10
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70134.
A SPICE Model data sheet is available for this product (FaxBack document #70636).
Symbol
R
thJA
Limit
62.5
Unit
_C/W
Siliconix
S-47958—Rev. F, 15-Apr-96
1
Si9947DY
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –16 V, V
GS
= 0 V
V
DS
= –10 V, V
GS
= 0 V, T
J
= 70_C
V
DS
v
–5 V, V
GS
= –10 V
V
DS
v
–5 V, V
GS
= –4.5 V
V
GS
= –10 V, I
D
= 3.5 A
V
GS
= –4.5 V, I
D
= 2 A
V
DS
= –15 V, I
D
= –3.5 A
I
S
= –1.7 A, V
GS
= 0 V
4.0
–0.9
–1.2
–14
–2.5
0.10
0.19
A
W
S
V
–1.0
"100
–1
–5
V
nA
mA
Symbol
Test Condition
Min
Typ
a
Max
Unit
On-State Drain Current
b
I
D(on)
Drain-Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
r
DS(on)
g
fs
V
SD
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –3.5 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
,
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
1A
10 V
V
DS
= –10 V, V
GS
= –10 V, I
D
= –3.5 A
13
2
5
21
12
12
11
50
40
25
30
20
100
ns
30
nC
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
2
Siliconix
S-47958—Rev. F, 15-Apr-96
Si9947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
10
V
GS
= 10, 9, 8, 7, 6, 5 V
8
I
D
– Drain Current (A)
4V
I
D
– Drain Current (A)
8
10
Transfer Characteristics
6
6
4
3V
4
T
C
= 125_C
25_C
0
–55_C
2
2
2V
0
0
2
4
6
8
10
V
DS
– Drain-to-Source Voltage (V)
0
1
2
3
4
5
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.32
2000
Capacitance
r
DS(on)
– On-Resistance (
W
)
C – Capacitance (pF)
0.24
1500
0.16
V
GS
= 4.5 V
1000
0.08
V
GS
= 10 V
C
iss
500
C
oss
0
0
2
4
6
8
10
I
D
– Drain Current (A)
0
0
C
rss
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 3.5 A
Gate Charge
1.4
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 3.5 A
r
DS(on)
– On-Resistance (
W
)
(Normalized)
8
1.2
6
1.0
4
0.8
2
0
0
2
4
6
8
10
12
14
0.6
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Siliconix
S-47958—Rev. F, 15-Apr-96
3
Si9947DY
Typical Characteristics (25_C Unless Otherwise Noted)
10
Source-Drain Diode Forward Voltage
T
J
= 150_C
r
DS(on)
– On-Resistance (
W
)
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 25_C
I
D
= 3.5 A
1
0
0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
1.0
Threshold Voltage
I
D
= 250
mA
25
Single Pulse Power
20
0.5
V
GS(th)
Variance (V)
Power (W)
15
0.0
10
–0.5
5
–1
–50
0
50
T
J
– Temperature (_C)
100
150
0
10
–2
10
–1
1
Time (sec)
10
30
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
4. Surface Mounted
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-47958—Rev. F, 15-Apr-96
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