Preliminary
TSM4415
30V P-Channel MOSFET
SOP-8
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5, Drain
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(mΩ)
-30
26 @ V
GS
= -20V
35 @ V
GS
= -10V
I
D
(A)
-8.0
-8.0
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Block Diagram
(1,2,3)
Application
●
●
Load Switch
PA Switch
(4)
Ordering Information
Part No.
TSM4415CS RL
Package
SOP-8
Packing
2.5kpcs/13” reel
(5,6,7,8)
P-Channel MOSFET
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
o
Limit
-30
±25
-8
-30
-1
Unit
V
V
A
A
A
W
o
o
Ta = 25
o
C
Ta = 70 C
P
D
3
2.1
+150
- 55 to +150
T
J
T
J
, T
STG
C
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t
≤
5 sec.
Symbol
RӨ
JF
RӨ
JA
Limit
30
75
Unit
o
o
C/W
C/W
1/1
Version: Preliminary
Preliminary
Electrical Specifications
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
V
DD
= -15V, R
L
= 1.8Ω,
I
D
= -1A, V
GEN
= -10V,
R
G
= 3Ω
t
d(on)
t
r
t
d(off)
--
--
--
--
20.5
4.4
42.8
7.3
V
GS
= 0V, I
D
= -250uA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= -24V, V
GS
= 0V
V
DS
≥
-10V, V
GS
= -5V
V
GS
= -20V, I
D
= -8A
V
GS
= -10V, I
D
= -8A
V
GS
= -6V, I
D
= -5A
V
DS
= -5V, I
D
= -8A
I
S
= -1A, V
GS
= 0V
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
R
DS(ON)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
-30
-1.0
--
--
-6
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
21
28
41
11.5
-0.8
18.1
6.5
3.2
TSM4415
30V P-Channel MOSFET
Conditions
Symbol
Min
Typ
Max
--
-3.0
±100
-1.0
--
26
35
--
--
-1.0
--
--
--
--
--
--
--
--
--
--
Unit
V
V
nA
µA
A
mΩ
S
V
V
DS
= -15V, I
D
= -8A,
V
GS
= -10V
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
nC
1047.9
172.8
115.5
pF
nS
t
f
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
Version: Preliminary
Preliminary
TSM4415
30V P-Channel MOSFET
SOP-8 Mechanical Drawing
A
DIM
SOP-8 DIMENSION
MILLIMETERS
MIN
4.80
3.80
1.35
0.35
0.40
0.10
0º
5.80
0.25
MAX
5.00
4.00
1.75
0.49
1.25
0.25
7º
6.20
0.50
MIN
0.189
0.150
0.054
0.014
0.016
0.004
0º
0.229
0.010
INCHES
MAX.
0.196
0.157
0.068
0.019
0.049
0.009
7º
0.244
0.019
16
9
B
P
A
B
C
D
F
G
R
1
8
G
C
D
K
M
1.27BSC
0.05BSC
K
M
F
P
R
3/3
Version: Preliminary
Preliminary
TSM4415
30V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: Preliminary
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