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HN1K06FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

HN1K06FU

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

High input impedance and extremely low drive current.

V

th

is low and it is possible to drive directly at low-voltage CMOS.

: V

th

= 0.5 to 1.5 V

Switching speed is fast.

Suitable for high-density mounting because of a compact package

(Q1, Q2 common)

Absolute Maximum Ratings

(Ta

=

25°C)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Symbol

V

DS

V

GSS

I

D

P

D

(Note 1)

T

ch

T

stg

Rating

20

10

100

200

150

−55

to 150

Unit

V

mA

mW

°C

JEDEC

JEITA

TOSHIBA

Weight: 6.8 mg

―

2-2J1C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: TOTAL rating

1

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HN1K06FU

Electrical Characteristics

(Ta

=

25°C) (Q1, Q2 common)

Characteristic

Gate leakage current

Drain-source breakdown voltage

Drain cut-off current

Gate threshold voltage

Forward transfer admittance

Drain-source ON resistance

Input capacitance

Reverse transfer capacitance

Output capacitance

Symbol

I

GSS

V

(BR) DSS

I

DSS

V

th

⎪Y

fs

⎪

R

DS (ON)

C

iss

C

rss

C

oss

t

on

Switching time

t

off

Test Condition

V

GS

=

10 V, V

DS

=

0 V

I

D

=

100

μA,

V

GS

=

0 V

V

DS

=

20 V, V

GS

=

0 V

V

DS

=

3 V, I

D

=

0.1 mA

V

DS

=

3 V, I

D

=

10 mA

I

D

=

10 mA, V

GS

=

2.5 V

V

DS

=

3 V, V

GS

=0 V, f

=

1 MHz

V

DS

=

3 V, V

GS

=0 V, f

=

1 MHz

V

DS

=

3 V, V

GS

=0 V, f

=

1 MHz

V

DD

=

3 V, I

D

=

10 mA,

V

GS

=

0 to 2.5 V

V

DD

=

3 V, I

D

=

10 mA,

V

GS

=

0 to 2.5 V

Min

⎯

20

⎯

0.5

35

⎯

Typ.

⎯

62

3.5

14

5.3

16

0.28

0.34

Max

1

⎯

1

1.5

⎯

6.0

⎯

μs

⎯

Unit

μA

V

μA

V

mS

Ω

pF

Equivalent Circuit

(top view)

6

5

4

Marking

6

5

4

Q1

Q2

KJ

1

(Q1, Q2 common)

2

3

1

2

3

Switching Time Test Circuit

(a) Test circuit

I

D

2.5 V

0

10

μs

V

IN

50

Ω

R

L

OUT

V

DD

=

3 V

D.U.

<

1%

=

V

IN

: t

r

, t

f

<

5 ns

(Z

out

=

50

Ω)

Common Source

Ta

=

25°C

(b) V

IN

V

GS

2.5 V

10%

90%

0

V

DD

(c) V

OUT

V

DS

V

DS (ON)

90%

t

r

t

on

t

off

10%

V

DD

t

f

2

2007-11-01

HN1K06FU

(Q1, Q2 common)

I

D

– V

DS

100

2.5

80

1.9

60

2.0

Common source

Ta

=

25°C

0.8

1.0

2.5

1.2

I

D

– V

DS

(low voltage region)

Common source Ta

=

25°C

1.15

(mA)

I

D

I

D

(mA)

1.8

1.7

VGS

=

1.6 V

0.6

1.1

0.4

VGS

=

1.05 V

0.2

Drain current

40

20

1.4

1.2

Drain current

1.0

0.95

0

0.1

0.2

0.3

0.4

0.5

0

2

4

6

8

10

0

Drain-source voltage

V

DS

(V)

Drain-source voltage V

DS

(V)

I

DR

– V

DS

100

Common source

100

Ta

=

100°C

I

D

– V

GS

Common source

VDS

=

3 V

(mA)

VGS

=

0

10

(mA)

I

D

I

DR

Ta

=

25°C

10

Drain reverse current

G

S

0.1

I

DR

Drain current

1

D

−25°C

1

25°C

0.1

0.01

0

−0.2

−0.4

−0.6 −0.8

−1.0

−1.2

−1.4

−1.6

−1.8

0.01

0

1

2

3

4

5

6

Drain-source voltage

V

DS

(V)

Gate-source voltage

V

GS

(V)

⎪Y

fs

⎪

– I

D

300

Common source

VDS

=

3 V

100

C – V

DS

Common source

VGS

=

0

Coss

f

=

1 MHz

Ta

=

25°C

Forward transfer admittance

⎪Y

fs

⎪

(mS)

100 Ta

=

25°C

(pF)

30

Ciss

Crss

10

30

10

Capacitance

C

3

1

0.5

0.1

1

3

5

10

30

50

100

300

0.3 0.5

1

3

5

10

30

Drain current

I

D

(mA)

Drain-source voltage

V

DS

(V)

3

2007-11-01

HN1K06FU

(Q1, Q2 common)

V

DS (ON)

– I

D

3

1

Common source

VGS

=

2.5 V

Ta

=

25°C

1000

t – I

D

500

Drain-source on voltage

V

DS (ON)

(V)

(ns)

toff

tr

tf

ton

300

Switching time

0.1

t

100

50

0.01

2.5 V

30 0

10

μs

VIN

ID

IN

50

Ω

OUT

RL

VDD

10

VDD

=

5 V

D.U.

<

1%

=

VIN: tr, tf

<

5 ns

(Zout

=

50

Ω)

Common source

Ta

=

25°C

30

50

100

0.001

0.5

1

10

100

300

10

1

3

5

Drain current

I

D

(mA)

Drain current

I

D

(mA)

P

D

* – Ta

350

300

Drain power dissipation

P

D

* (mW)

250

200

150

100

50

0

20

40

60

80

100

120

140

160

Ambient temperature

Ta

(°C)

*: TOTAL rating

4

2007-11-01

HN1K06FU

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

20070701-EN GENERAL

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

•

The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

•

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

•

Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

5

2007-11-01

HN1K06FU_07

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