Datasheet> 器件分类 > 存储> VS27217801BTGE-10

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VS27217801BTGE-10: 产品描述Synchronous DRAM Module, 2MX72, 8ns, CMOS, DIMM-168; 产品类别存储; 文件大小140KB，共15页; 制造商Vanguard International Semiconductor Corporation; 官网地址http://www.vis.com.tw/

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VS27217801BTGE-10概述

Synchronous DRAM Module, 2MX72, 8ns, CMOS, DIMM-168

VS27217801BTGE-10规格参数

参数名称	属性值
厂商名称	Vanguard International Semiconductor Corporation
零件包装代码	DIMM
包装说明	DIMM,
针数	168
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
访问模式	SINGLE BANK PAGE BURST
最长访问时间	8 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N168
内存密度	150994944 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE
内存宽度	72
功能数量	1
端口数量	1
端子数量	168
字数	2097152 words
字数代码	2000000
工作模式	SYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	2MX72
封装主体材料	UNSPECIFIED
封装代码	DIMM
封装形状	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	NO
技术	CMOS
温度等级	COMMERCIAL
端子形式	NO LEAD
端子位置	DUAL
Base Number Matches	1

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VIS

Description

VS27217801BTGE,VS47217801BTGE

2M,4MX72-Bit

SDRAM Module

The VS27217801BTGE and VS47217801BTGE are 2M x 72 - bit and 4M x 72 - bit dual - in - line syn-

chronous dynamic RAM module (DIMM). It is mounted with 9/18 pieces of 2M x 8 synchronous

DRAM(VG3617801BT), and each in a standard 44 pin TSOP package. The VS27217801BTGE and

VS47217801BTGE make high density possible without utilizing the surface mount technology on the printed

circuit board. Decoupling capacitors are mounted on power supply line for noise reduction. The module uses

serial presence detects implemented via a 2k-bit serial EEPROM component.

Features

VS27217801BTGE, VS47217801BTGE :

• Single 3.3V (

0.3V

) power supply

• Utilizes 100MHz SDRAM components

• Fully synchronous with all signals referenced to a positive clock edge

• Programmable burst length (1,2,4,8 & Full page)

• Programmable wrap sequence (Sequential/Interleave)

• Automatic precharge and controlled precharge

• Auto refresh and self refresh modes

• I/O level : LVTTL interface

• Random column access in every cycle

• 2048 refresh cycles/32ms

• Serial Presence Detect (SPD)

• JEDEC Standard pinout

• Comply to Intel PC - 100 4clock unbuffered SDRAM DIMM spec.

• ECC-optimized configuration

Document:1G5-0140

Rev.1

Page 1

VS27217801BTGE-10相似产品对比

	VS27217801BTGE-10	VS47217801BTGE-8H	VS27217801BTGE-8L	VS27217801BTGE-8H	VS47217801BTGE-8L	VS47217801BTGE-10
描述	Synchronous DRAM Module, 2MX72, 8ns, CMOS, DIMM-168	Synchronous DRAM Module, 4MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 2MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 2MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 4MX72, 6ns, CMOS, DIMM-168	Synchronous DRAM Module, 4MX72, 8ns, CMOS, DIMM-168
厂商名称	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation	Vanguard International Semiconductor Corporation
零件包装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
包装说明	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,	DIMM,
针数	168	168	168	168	168	168
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N	N
访问模式	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
最长访问时间	8 ns	6 ns	6 ns	6 ns	6 ns	8 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
内存密度	150994944 bit	301989888 bit	150994944 bit	150994944 bit	301989888 bit	301989888 bit
内存集成电路类型	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
内存宽度	72	72	72	72	72	72
功能数量	1	1	1	1	1	1
端口数量	1	1	1	1	1	1
端子数量	168	168	168	168	168	168
字数	2097152 words	4194304 words	2097152 words	2097152 words	4194304 words	4194304 words
字数代码	2000000	4000000	2000000	2000000	4000000	4000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	2MX72	4MX72	2MX72	2MX72	4MX72	4MX72
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装代码	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
自我刷新	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	NO	NO	NO	NO	NO	NO
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	1

VS27217801BTGE-10

VS27217801BTGE-10概述

VS27217801BTGE-10规格参数

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VS27217801BTGE-10相似产品对比

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