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CMS09_06

产品描述1 A, 30 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小155KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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CMS09_06概述

1 A, 30 V, SILICON, SIGNAL DIODE

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CMS09
TOSHIBA Schottky Barrier Rectifier
Schottky Barrier Type
CMS09
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Forward voltage: V
FM
= 0.45 V (½ax)
Average forward current: I
F (AV)
= 1.0 A
Repetitive peak reverse voltage: V
RRM
= 30 V
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
(Note 1)
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
30
1.0
(Ta
=
51°C)
25 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature
JEDEC
JEITA
TOSHIBA
3-4E1A
Note 1: Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm, soldering land: 6 mm
×
6 mm)
Weight: 0.023 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
V
FM (2)
V
FM (3)
Repetitive peak reverse current
Junction capacitance
I
RRM
I
RRM
C
j
Test Condition
I
FM
=
0.1 A
I
FM
=
0.5 A
I
FM
=
1.0 A
V
RRM
=
5 V
V
RRM
=
30 V
V
R
=
10 V, f
=
1.0 MHz
Device mounted on a ceramic board
(soldering land: 2 mm
×
2 mm)
Thermal resistance
R
th (j-a)
Device mounted on a glass-epoxy
board
(soldering land: 6 mm
×
6 mm)
Min
Typ.
0.32
0.37
0.40
1.5
15.0
70
Max
0.45
500
60
°C/W
135
16
°C/W
μA
pF
V
Unit
Thermal resistance
R
th (j-ℓ)
1
2006-11-13

CMS09_06相似产品对比

CMS09_06 CMS09
描述 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 30 V, SILICON, SIGNAL DIODE

 
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