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CMH08A

产品描述2 A, 400 V, SILICON, RECTIFIER DIODE
产品类别分立半导体    二极管   
文件大小181KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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CMH08A概述

2 A, 400 V, SILICON, RECTIFIER DIODE

CMH08A规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Toshiba(东芝)
包装说明R-PDSO-F2
针数2
制造商包装代码3-4E1A
Reach Compliance Codeunknow
ECCN代码EAR99
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.8 V
JESD-30 代码R-PDSO-F2
最大非重复峰值正向电流20 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-40 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压400 V
最大反向恢复时间0.035 µs
表面贴装YES
端子形式FLAT
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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CMH08A
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CMH08A
Switching Mode Power Supply Applications
Unit: mm
Repetitive peak reverse voltage: V
RRM
= 400 V
Average forward current: I
F (AV)
= 2.0 A
Low forward voltage: V
FM
=1.8 V(Max.)
Very Fast Reverse-Recovery Time: trr =35ns(Max.)
Suitable for compact assembly due to small surface-mount package
“M−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Repetitive peak reverse voltage
Average forward current
Peak one cycle surge forward current
(non-repetitive)
Junction temperature
Storage temperature range
Symbol
V
RRM
I
F (AV)
I
FSM
T
j
T
stg
Rating
400
2.0 (Note 1)
20 (50 Hz)
−40~150
−40~150
Unit
V
A
A
°C
°C
Note 1: Tℓ=99°C Device mounted on a seramic board
board size: 50 mm
×
50 mm
soldering land: 2 mm
×2
mm
board thickness:0.64t
JEDEC
JEITA
Note 2: Using continuously under heavy loads (e.g. the application of
TOSHIBA
3-4E1A
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.023 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
V
FM (1)
Peak forward voltage
Peak repetitive reverse current
Reverse recovery time
Forward recovery time
V
FM (2)
V
FM (3)
I
RRM
t
rr
t
fr
Test Condition
I
FM
=
0.1 A (pulse test)
I
FM
=
1.0 A (pulse test)
I
FM
=
2.0 A (pulse test)
V
RRM
=
400 V (pulse test)
I
F
=
1 A, di/dt =
−30
A/μs
I
F
=
1.0 A
Device mounted on a ceramic board
(board size: 50 mm
×
50 mm)
(soldering land: 2 mm
×
2 mm)
(board thickness: 0.64 t)
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 6 mm
×
6 mm)
(board thickness: 1.6 t)
Device mounted on a glass-epoxy board
(board size: 50 mm
×
50 mm)
(soldering land: 2.1 mm
×
1.4 mm)
(board thickness: 1.6 t)
Thermal resistance
(junction to lead)
R
th (j-ℓ)
Min
Typ.
0.88
1.3
1.6
Max
1.8
10
35
100
60
μA
ns
ns
V
Unit
135
°C/W
210
16
°C/W
1
2006-11-08

 
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