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71V256SA10YI8: 产品描述Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28; 产品类别存储; 文件大小88KB，共8页; 制造商IDT (Integrated Device Technology)

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71V256SA10YI8概述

Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28

71V256SA10YI8规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	SOJ
包装说明	SOJ, SOJ28,.34
针数	28
Reach Compliance Code	not_compliant
ECCN代码	EAR99
Is Samacsys	N
最长访问时间	10 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-J28
JESD-609代码	e0
长度	17.9324 mm
内存密度	262144 bit
内存集成电路类型	CACHE SRAM
内存宽度	8
湿度敏感等级	3
功能数量	1
端子数量	28
字数	32768 words
字数代码	32000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	32KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	SOJ
封装等效代码	SOJ28,.34
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
并行/串行	PARALLEL
电源	3.3 V
认证状态	Not Qualified
座面最大高度	3.556 mm
最大待机电流	0.002 A
最小待机电流	3 V
最大压摆率	0.1 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	J BEND
端子节距	1.27 mm
端子位置	DUAL
宽度	7.5184 mm
Base Number Matches	1

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Lower Power

3.3V CMOS Fast SRAM

256K (32K x 8-Bit)

Features

Ideal for high-performance processor secondary cache

Commercial (0°C to +70°C) and Industrial (–40°C to +85°C)

temperature range options

Fast access times:

– Commercial and Industrial: 10/12/15/20ns

Low standby current (maximum):

– 2mA full standby

Small packages for space-efficient layouts:

– 28-pin 300 mil SOJ

– 28-pin TSOP Type I

Produced with advanced high-performance CMOS

technology

Inputs and outputs are LVTTL-compatible

Single 3.3V(±0.3V) power supply

IDT71V256SA

Description

The IDT71V256SA is a 262,144-bit high-speed static RAM organized

as 32K x 8. It is fabricated using IDT’s high-performance, high-reliability

CMOS technology.

The IDT71V256SA has outstanding low power characteristics while

at the same time maintaining very high performance. Address access

times of as fast as 10ns are ideal for 3.3V secondary cache in 3.3V

desktop designs.

When power management logic puts the IDT71V256SA in standby

mode, its very low power characteristics contribute to extended battery life.

By taking

HIGH, the SRAM will automatically go to a low power standby

mode and will remain in standby as long as

remains HIGH. Further-

more, under full standby mode (CS at CMOS level, f=0), power consump-

tion is guaranteed to always be less than 6.6mW and typically will be much

smaller.

The IDT71V256SA is packaged in a 28-pin 300 mil SOJ and a 28-pin

300 mil TSOP Type I.

Functional Block Diagram

ADDRESS

DECODER

262,144 BIT

MEMORY ARRAY

GND

I/O

INPUT

DATA

CIRCUIT

I/O

I/O CONTROL

CONTROL

CIRCUIT

3101 drw 01

JUNE 2002

DSC-3101/07

71V256SA10YI8相似产品对比

	71V256SA10YI8	71V256SA10PZ8	71V256SA15PZ8	71V256SA12PZI8	71V256SA12PZI	71V256SA10YI	71V256SA12PZ8	71V256SA20Y8
描述	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 15ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 10ns, CMOS, PDSO28, 0.300 INCH, SOJ-28	Cache SRAM, 32KX8, 12ns, CMOS, PDSO28, 0.300 INCH, TSOP1-28	Cache SRAM, 32KX8, 20ns, CMOS, PDSO28, 0.300 INCH, SOJ-28
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	SOJ	TSOP	TSOP	TSOP	TSOP	SOJ	TSOP	SOJ
包装说明	SOJ, SOJ28,.34	TSOP1, TSSOP28,.53,22	0.300 INCH, TSOP1-28	0.300 INCH, TSOP1-28	0.300 INCH, TSOP1-28	SOJ, SOJ28,.34	0.300 INCH, TSOP1-28	0.300 INCH, SOJ-28
针数	28	28	28	28	28	28	28	28
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	10 ns	10 ns	15 ns	12 ns	12 ns	10 ns	12 ns	20 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-J28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-J28	R-PDSO-G28	R-PDSO-J28
长度	17.9324 mm	11.8 mm	11.8 mm	11.8 mm	11.8 mm	17.9324 mm	11.8 mm	17.9324 mm
内存密度	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
内存集成电路类型	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM	CACHE SRAM
内存宽度	8	8	8	8	8	8	8	8
湿度敏感等级	3	3	3	3	1	1	3	3
功能数量	1	1	1	1	1	1	1	1
端子数量	28	28	28	28	28	28	28	28
字数	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
字数代码	32000	32000	32000	32000	32000	32000	32000	32000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	85 °C	85 °C	70 °C	70 °C
组织	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	SOJ	TSOP1	TSOP1	TSOP1	TSOP1	SOJ	TSOP1	SOJ
封装等效代码	SOJ28,.34	TSSOP28,.53,22	TSSOP28,.53,22	TSSOP28,.53,22	TSSOP28,.53,22	SOJ28,.34	TSSOP28,.53,22	SOJ28,.34
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	3.556 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	3.556 mm	1.2 mm	3.556 mm
最大待机电流	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
最小待机电流	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.1 mA	0.1 mA	0.085 mA	0.09 mA	0.09 mA	0.1 mA	0.09 mA	0.085 mA
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL
端子形式	J BEND	GULL WING	GULL WING	GULL WING	GULL WING	J BEND	GULL WING	J BEND
端子节距	1.27 mm	0.55 mm	0.55 mm	0.55 mm	0.55 mm	1.27 mm	0.55 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	7.5184 mm	8 mm	8 mm	8 mm	8 mm	7.5184 mm	8 mm	7.5184 mm
JESD-609代码	e0	e0	e0	e0	-	-	e0	e0
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	-	-	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
Base Number Matches	1	1	1	1	1	1	1	-

71V256SA10YI8

71V256SA10YI8概述

71V256SA10YI8规格参数

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