SEMiX 253GD176HDc
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMiX
®
33c
Trench IGBT Modules
SEMiX 253GD176HDc
Inverse diode
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Preliminary Data
Features
Typical Applications
Inverse diode
Remarks
Thermal characteristics
Temperature sensor
Mechanical data
GD
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01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
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01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
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01-03-2006 GES
© by SEMIKRON
SEMiX 253GD176HDc
Fig. 13 Typ. CAL diode recovered charge
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
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01-03-2006 GES
© by SEMIKRON