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IDT72V2101L10PFG

产品描述FIFO, 256KX9, 6.5ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64
产品类别存储   
文件大小425KB,共27页
制造商IDT (Integrated Device Technology)
标准  
下载文档 详细参数 选型对比 全文预览

IDT72V2101L10PFG概述

FIFO, 256KX9, 6.5ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64

IDT72V2101L10PFG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码QFP
包装说明LQFP,
针数64
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
最长访问时间6.5 ns
其他特性RETRANSMIT; AUTO POWER DOWN
周期时间10 ns
JESD-30 代码S-PQFP-G64
JESD-609代码e3
长度14 mm
内存密度2359296 bit
内存宽度9
湿度敏感等级3
功能数量1
端子数量64
字数262144 words
字数代码256000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256KX9
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码LQFP
封装形状SQUARE
封装形式FLATPACK, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.6 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Matte Tin (Sn) - annealed
端子形式GULL WING
端子节距0.8 mm
端子位置QUAD
处于峰值回流温度下的最长时间30
宽度14 mm
Base Number Matches1

文档预览

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3.3 VOLT HIGH DENSITY CMOS
SUPERSYNC FIFO™
262,144 x 9
524,288 x 9
FEATURES:
IDT72V2101
IDT72V2111
Choose among the following memory organizations:
IDT72V2101
262,144 x 9
IDT72V2111
524,288 x 9
Pin-compatible with the IDT72V261/72V271 and the IDT72V281/
72V291 SuperSync FIFOs
10ns read/write cycle time (6.5ns access time)
Fixed, low first word data latency time
5V input tolerant
Auto power down minimizes standby power consumption
Master Reset clears entire FIFO
Partial Reset clears data, but retains programmable settings
Retransmit operation with fixed, low first word data latency time
Empty, Full and Half-Full flags signal FIFO status
Programmable Almost-Empty and Almost-Full flags, each flag can
default to one of two preselected offsets
Program partial flags by either serial or parallel means
Select IDT Standard timing (using
EF
and
FF
flags) or First Word Fall
Through timing (using
OR
and
IR
flags)
Output enable puts data outputs into high impedance state
Easily expandable in depth and width
Independent Read and Write clocks (permit reading and writing
simultaneously)
WEN
D
0
-D
8
Available in the 64-pin Thin Quad Flat Pack (TQFP)
High-performance submicron CMOS technology
Industrial temperature range (–40°C to +85°C) is available
Green parts available, see ordering information
DESCRIPTION:
The IDT72V2101/72V2111 are exceptionally deep, high speed, CMOS
First-In-First-Out (FIFO) memories with clocked read and write controls. These
FIFOs offer numerous improvements over previous SuperSync FIFOs,
including the following:
• The limitation of the frequency of one clock input with respect to the other has
been removed. The Frequency Select pin (FS) has been removed, thus
it is no longer necessary to select which of the two clock inputs, RCLK or
WCLK, is running at the higher frequency.
• The period required by the retransmit operation is now fixed and short.
• The first word data latency period, from the time the first word is written to an
empty FIFO to the time it can be read, is now fixed and short. (The variable
clock cycle counting delay associated with the latency period found on
previous SuperSync devices has been eliminated on this SuperSync family.)
SuperSync FIFOs are particularly appropriate for network, video, telecommu-
nications, data communications and other applications that need to buffer large
amounts of data.
FUNCTIONAL BLOCK DIAGRAM
WCLK
LD SEN
INPUT REGISTER
OFFSET REGISTER
FF/IR
PAF
EF/OR
PAE
HF
FWFT/SI
WRITE CONTROL
LOGIC
RAM ARRAY
262,144 x 9
524,288 x 9
FLAG
LOGIC
WRITE POINTER
READ POINTER
OUTPUT REGISTER
MRS
PRS
READ
CONTROL
LOGIC
RT
RESET
LOGIC
RCLK
REN
OE
Q
0
-Q
8
4669 drw 01
IDT and the IDT logo are trademarks of Integrated Device Technology, Inc. The SuperSync FIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
1
JULY 2014
DSC-4669/5
©
2014 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.

IDT72V2101L10PFG相似产品对比

IDT72V2101L10PFG IDT72V2111L15PFGI8 IDT72V2111L10PFG IDT72V2111L10PFG8
描述 FIFO, 256KX9, 6.5ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64 FIFO, 512KX9, 10ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64 FIFO, 512KX9, 6.5ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64 FIFO, 512KX9, 6.5ns, Synchronous, CMOS, PQFP64, PLASTIC, TQFP-64
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
零件包装代码 QFP QFP QFP QFP
包装说明 LQFP, LQFP, LQFP, LQFP,
针数 64 64 64 64
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最长访问时间 6.5 ns 10 ns 6.5 ns 6.5 ns
周期时间 10 ns 15 ns 10 ns 10 ns
JESD-30 代码 S-PQFP-G64 S-PQFP-G64 S-PQFP-G64 S-PQFP-G64
JESD-609代码 e3 e3 e3 e3
长度 14 mm 14 mm 14 mm 14 mm
内存密度 2359296 bit 4718592 bit 4718592 bit 4718592 bit
内存宽度 9 9 9 9
湿度敏感等级 3 3 3 3
功能数量 1 1 1 1
端子数量 64 64 64 64
字数 262144 words 524288 words 524288 words 524288 words
字数代码 256000 512000 512000 512000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 85 °C 70 °C 70 °C
组织 256KX9 512KX9 512KX9 512KX9
可输出 YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LQFP LQFP LQFP LQFP
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE FLATPACK, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.6 mm 1.6 mm 1.6 mm 1.6 mm
最大供电电压 (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V
最小供电电压 (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) - annealed MATTE TIN Matte Tin (Sn) - annealed MATTE TIN
端子形式 GULL WING GULL WING GULL WING GULL WING
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 QUAD QUAD QUAD QUAD
处于峰值回流温度下的最长时间 30 30 30 30
宽度 14 mm 14 mm 14 mm 14 mm
Base Number Matches 1 1 1 1
其他特性 RETRANSMIT; AUTO POWER DOWN - RETRANSMIT; AUTO POWER DOWN RETRANSMIT; AUTO POWER DOWN
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