PD - 95168
Si4410DYPbF
l
l
l
l
l
l
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
Lead-Free
HEXFET
®
Power MOSFET
A
A
D
D
D
D
S
S
S
G
1
8
7
2
V
DSS
= 30V
3
6
4
5
R
DS(on)
= 0.0135Ω
Description
This N-channel HEXFET
®
Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
dv/dt
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
Units
V
A
W
W/°C
V/ns
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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09/22/04
Si4410DYPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.029 ––– V/°C Reference to 25°C, I
D
= 1mA
0.010 0.0135
V
GS
= 10V, I
D
= 10A
Ω
0.015 0.020
V
GS
= 4.5V, I
D
= 5.0A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
35 –––
S
V
DS
= 15V, I
D
= 10A
––– 1.0
V
DS
= 30V, V
GS
= 0V
µA
––– 25
V
DS
= 30V, V
GS
= 0V, T
J
= 55°C
––– -100
V
GS
= -20V
nA
––– 100
V
GS
= 20V
30
45
I
D
= 10A
5.4 –––
nC V
DS
= 15V
6.5 –––
V
GS
= 10V, See Fig. 10
11 –––
V
DD
= 25V
7.7 –––
I
D
= 1.0A
ns
38 –––
R
G
= 6.0Ω
44 –––
R
D
= 25Ω,
1585 –––
V
GS
= 0V
739 –––
pF
V
DS
= 15V
106 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Parameter
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
0.7
50
2.3
A
50
1.1
80
V
ns
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.3A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.3A
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 8.0mH
R
G
= 25Ω, I
AS
= 10A. (See Figure 15)
Pulse width
≤
300µs; duty cycle
≤
2%.
When mounted on FR4 Board, t
≤10
sec
I
SD
≤2.3A,
di/dt
≤
130A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
2
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Si4410DYPbF
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
100
4.5V
4.5V
10
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= -55°C
T
J
= 25°C
T
J
= 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10A
I
D
= 11A
I
D
, Drain-to-Source Current (A)
1.5
100
1.0
0.5
10
4
8
V
DS
= 25V
20µs PULSE WIDTH
12
16
A
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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Si4410DYPbF
2400
2000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 10A
V
DS
= 24V
V
DS
= 15V
16
C, Capacitance (pF)
1600
Ciss
12
1200
Coss
800
8
400
4
Crss
0
1
10
100
0
0
10
20
30
40
50
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
T
J
= 25
°
C
1
I
D
, Drain Current (A)
100
10us
10
100us
1ms
0.1
0.4
V
GS
= 0 V
0.5
0.6
0.7
0.8
0.9
1.0
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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Si4410DYPbF
10.0
100
8.0
80
I
D
, Drain Current (A)
Power ( W)
6.0
60
4.0
40
2.0
20
0.0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
A
T
C
, Case Temperature ( ° C)
Time (sec)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Typical Power Vs. Time
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
t
1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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