Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | LOGIC Devices |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP28,.3 |
| 针数 | 24 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 35 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T24 |
| JESD-609代码 | e0 |
| 长度 | 31.75 mm |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 24 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX4 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP28,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 225 |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大待机电流 | 0.001 A |
| 最小待机电流 | 2 V |
| 最大压摆率 | 0.12 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8952404XA | 5962-8868101LA | 5962-8868105XX | 5962-8868101XX | 5962-8952406XA | 5962-8868106XX | 5962-8868101XC | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 64KX4, 35ns, CMOS, CDIP24, CERAMIC, DIP-24 | Standard SRAM, 64KX4, 25ns, CMOS, CQCC28 | Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 64KX4, 20ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 64KX4, 20ns, CMOS, CQCC28 | Standard SRAM, 64KX4, 35ns, CMOS, CQCC28, CERAMIC, LCC-28 |
| 包装说明 | DIP, DIP28,.3 | DIP, | QCCN, | QCCN, | DIP, DIP28,.3 | QCCN, | QCCN, LCC28,.35X.55 |
| Reach Compliance Code | unknown | unknow | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C | 3A001.A.2.C |
| 最长访问时间 | 35 ns | 35 ns | 25 ns | 35 ns | 20 ns | 20 ns | 35 ns |
| JESD-30 代码 | R-GDIP-T24 | R-GDIP-T24 | R-CQCC-N28 | R-CQCC-N28 | R-GDIP-T24 | R-CQCC-N28 | R-CQCC-N28 |
| 内存密度 | 262144 bit | 262144 bi | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 28 | 28 | 24 | 28 | 28 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | DIP | DIP | QCCN | QCCN | DIP | QCCN | QCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | YES | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD |
| 端子位置 | DUAL | DUAL | QUAD | QUAD | DUAL | QUAD | QUAD |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 厂商名称 | LOGIC Devices | - | - | - | LOGIC Devices | LOGIC Devices | LOGIC Devices |
| 零件包装代码 | DIP | DIP | - | QLCC | DIP | - | DIP |
| 针数 | 24 | 24 | - | 28 | 24 | - | 24 |
| JESD-609代码 | e0 | e0 | - | - | e0 | - | e4 |
| 长度 | 31.75 mm | 31.75 mm | 13.97 mm | - | 31.75 mm | 13.97 mm | 13.97 mm |
| 端口数量 | 1 | 1 | - | - | 1 | - | 1 |
| 输出特性 | 3-STATE | 3-STATE | - | - | 3-STATE | - | 3-STATE |
| 可输出 | YES | NO | - | - | YES | - | NO |
| 筛选级别 | 38535Q/M;38534H;883B | MIL-STD-883 | - | - | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm | 5.08 mm | 3.048 mm | - | 5.08 mm | 3.048 mm | 2.03 mm |
| 最小待机电流 | 2 V | 2 V | - | - | 2 V | - | 2 V |
| 端子面层 | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | - | - | Tin/Lead (Sn/Pb) - hot dipped | - | Gold (Au) |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | - | 2.54 mm | 1.27 mm | 1.27 mm |
| 宽度 | 7.62 mm | 7.62 mm | 8.89 mm | - | 7.62 mm | 8.89 mm | 8.89 mm |
| 其他特性 | - | AUTOMATIC POWER-DOWN | TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY | - | - | TTL COMPATIBLE INPUTS/OUTPUTS; BATTERY BACKUP; LOW POWER STANDBY | AUTOMATIC POWER-DOWN |
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