Freescale Semiconductor
Technical Data
Document Number: MHPA21010N
Rev. 6, 5/2006
UMTS Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in
50 ohm system
s operating in
the UMTS frequency band. A silicon FET design provides outstanding linearity
and gain. In addition, the excellent group delay and phase linearity characteris-
tics are ideal for digital modulation systems.
•
Typical W - CDMA Performance for V
DD
= 28 Volts, V
bias
= 8 Volts,
I
DQ
= 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels
at
±
5 MHz, ACPR Measured in 3.84 MHz Bandwidth.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF, 3GPP Test Model 1,
64 DTCH.
•
Adjacent Channel Power:
-
50 dBc @ 30 dBm, 5 MHz Channel Spacing
•
Power Gain: 23.7 dB Min (@ f = 2140 MHz)
•
0.2 dB Typical Gain Flatness
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
Ideal for Feedforward Base Station Applications
•
N Suffix Indicates Lead - Free Terminations
MHPA21010N
2110 - 2170 MHz
10 W, 23.7 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 3
Table 1. Maximum Ratings
(T
C
= 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power (Single Carrier CW)
Storage Temperature Range
Operating Case Temperature Range
Quiescent Bias Current
Symbol
V
DD
P
in
T
stg
T
C
I
DQ
Value
30
+20
- 40 to +100
- 20 to +100
750
Unit
Vdc
dBm
°C
°C
mA
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, V
BIAS
≅
8 V Set for Supply Current of 550 mA, T
C
= 25°C, 50
Ω
System)
Characteristic
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
Input VSWR
Noise Figure
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2140 MHz)
(f = 2110 - 2170 MHz)
(f = 2140 MHz)
Symbol
I
DD
G
p
G
F
P1dB
VSWR
in
NF
ACPR
Min
—
23.7
—
—
—
—
—
Typ
550
25
0.2
41.5
1.5:1
—
- 55
Max
—
—
0.6
—
2:1
10
- 50
dB
dBc
Unit
mA
dB
dB
dBm
Adjacent Channel Power Rejection @ 30 dBm Avg., 3.84 MHz BW,
5 MHz Channel Spacing
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHPA21010N
1
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL/ORL, INPUT/OUTPUT RETURN LOSS (dB)
20
15
10
5
0
−5
−10
−15
−20
2080
2100
2120
2140
2160
2180
V
DD
= 28 Vdc
P
out
= 5 W
I
DQ
= 550 mA
10 MHz Tone Spacing
G
ps
28
27
26
25
24
ORL
23
22
21
20
2200
30
28
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
26
24
22
20
18
25_C
16
2100
2110
2120
2130
2140
2150
2160
2170
2
2180
η
V
DD
= 28 Vdc
P
out
= 1 W (Avg.)
I
DQ
= 550 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
BW = 3.84 MHz Carrier Bandwidth
G
ps
16
T
C
= −10_C 14
η
, DRAIN EFFICIENCY (%)
40
G ps , POWER GAIN (dB)
25_C 12
85_C
10
8
85_C
−10_C 6
4
IRL
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 1. Two - Tone Power Gain, Input Return Loss
and Output Return Loss versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
Figure 2. 2 - Carrier W - CDMA Power Gain and Efficiency
versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−30
IM3
V
DD
= 28 Vdc
P
out
(P
in
) = 1 W (Avg.)
I
DQ
= 550 mA
−10
T
C
= 85_C −20
−10_C
−20
−25
−30
−35
−40
−45
−50
−55
10 MHz
−60
15
20
25
30
35
P
out
, OUTPUT POWER (WATTS) PEP
100 kHz
V
DD
= 28 Vdc, I
DQ
= 550 mA
100 kHz: f1 = 2139.95 MHz
f2 = 2140.05 MHz
10 MHz: f1 = 2135 MHz
f2 = 2145 MHz
−35
−40
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Carrier Bandwidth
−45
ACPR @ 5 MHz, IM3 @ 10 MHz, Bandwidth = 3.84 MHz
−50
ACPR
−55
2100
25_C
2120
2130
2140
2150
2160
2170
25_C
85_C
−30
−40
−10_C −50
−60
2180
2110
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA IM3 and ACPR
versus Frequency
IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc)
η
, DRAIN EFFICIENCY (%), Pout , OUTPUT POWER (dBm)
Figure 4. Two - Tone W - CDMA IM3 versus
Output Power
−20
−25
−30
−35
−40
−45
−50
−55
450 mA
−60
15
20
25
30
550 mA
V
DD
= 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
35
40
I
DQ
= 750 mA
650 mA
48
40
32
24
16
8
0
−5
G
ps
26
25
24
P
out
23
22
V
DD
= 28 Vdc
I
DQ
= 550 mA
f = 2140 MHz
0
5
10
15
20
25
21
20
P
in
, INPUT POWER (dBm)
η
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
MHPA21010N
2
Figure 6. CW Output Power, Efficiency and Gain
versus Input Power
RF Device Data
Freescale Semiconductor
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
