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7014S25JG8: 产品描述Dual-Port SRAM, 4KX9, 25ns, CMOS, PQCC52, 0.75 X 0.75 MM, 0.17 MM INCH HEIGHT, GREEN, PLASTIC, LCC-52; 产品类别存储; 文件大小101KB，共10页; 制造商IDT (Integrated Device Technology)

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7014S25JG8概述

Dual-Port SRAM, 4KX9, 25ns, CMOS, PQCC52, 0.75 X 0.75 MM, 0.17 MM INCH HEIGHT, GREEN, PLASTIC, LCC-52

7014S25JG8规格参数

参数名称	属性值
厂商名称	IDT (Integrated Device Technology)
包装说明	QCCJ,
Reach Compliance Code	compliant
最长访问时间	25 ns
JESD-30 代码	S-PQCC-J52
JESD-609代码	e3
长度	19.1262 mm
内存密度	36864 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	9
功能数量	1
端子数量	52
字数	4096 words
字数代码	4000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	4KX9
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装形状	SQUARE
封装形式	CHIP CARRIER
并行/串行	PARALLEL
座面最大高度	4.57 mm
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	MATTE TIN
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
宽度	19.1262 mm
Base Number Matches	1

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HIGH-SPEED

4K x 9DUAL-PORT

STATIC RAM

Features:

◆

IDT7014S

◆

True Dual-Ported memory cells which allow simultaneous

reads of the same memory location

High-speed access

– Commercial: 12/15/20/25ns (max.)

– Industrial: 20ns (max.)

Standard-power operation

– IDT7014S

Active: 750mW (typ.)

Fully asynchronous operation from either port

TTL-compatible; single 5V (±10%) power supply

Available in 52-pin PLCC and a 64-pin TQFP

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

Description:

The IDT7014 is a high-speed 4K x 9 Dual-Port Static RAM designed

to be used in systems where on-chip hardware port arbitration is not

needed. This part lends itself to high-speed applications which do not rely

on BUSY signals to manage simultaneous access.

The IDT7014 provides two independent ports with separate control,

address, and I/O pins that permit independent, asynchronous access for

reads or writes to any location in memory. See functional description.

The IDT7014 utilitizes a 9-bit wide data path to allow for parity at the

user's option. This feature is especially useful in data communication

applications where it is necessary to use a parity bit for transmission/

reception error checking.

Fabricated using a high-performance technology, these Dual-Ports

typically operate on only 750mW of power at maximum access times as

fast as 12ns.

The IDT7014 is packaged in a 52-pin PLCC and a 64-pin thin quad

flatpack, (TQFP).

Functional Block Diagram

R/W

I/O

- I/O

I/O

CONTROL

I/O

CONTROL

I/O

- I/O

- A

11L

ADDRESS

DECODER

MEMORY

ARRAY

ADDRESS

DECODER

- A

11R

2528 drw 01

MARCH 2016

DSC 2528/18

7014S25JG8相似产品对比

	7014S25JG8	7014S15PFG8	7014S20JGI8	7014S20JG8	7014S20PFGI8	7014S20PFG8	7014S25PFG8	7014S15JG8
描述	Dual-Port SRAM, 4KX9, 25ns, CMOS, PQCC52, 0.75 X 0.75 MM, 0.17 MM INCH HEIGHT, GREEN, PLASTIC, LCC-52	Dual-Port SRAM, 4KX9, 15ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64	Dual-Port SRAM, 8KX9, 20ns, CMOS, PQCC68, 0.95 X 0.95 INCH, 0.17 INCH HEIGHT, GREEN, PLASTIC, LCC-68	Dual-Port SRAM, 4KX9, 20ns, CMOS, PQCC52, 0.75 X 0.75 MM, 0.17 MM INCH HEIGHT, GREEN, PLASTIC, LCC-52	Dual-Port SRAM, 8KX9, 20ns, CMOS, PQFP80, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-80	Dual-Port SRAM, 4KX9, 20ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64	Dual-Port SRAM, 4KX9, 25ns, CMOS, PQFP64, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, TQFP-64	Dual-Port SRAM, 4KX9, 15ns, CMOS, PQCC52, 0.75 X 0.75 MM, 0.17 MM INCH HEIGHT, GREEN, PLASTIC, LCC-52
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
包装说明	QCCJ,	LQFP,	QCCJ,	QCCJ,	LQFP,	LQFP,	LQFP,	QCCJ,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	25 ns	15 ns	20 ns	20 ns	20 ns	20 ns	25 ns	15 ns
JESD-30 代码	S-PQCC-J52	S-PQFP-G64	S-PQCC-J68	S-PQCC-J52	S-PQFP-G80	S-PQFP-G64	S-PQFP-G64	S-PQCC-J52
JESD-609代码	e3	e3	e3	e3	e3	e3	e3	e3
长度	19.1262 mm	14 mm	24.2062 mm	19.1262 mm	14 mm	14 mm	14 mm	19.1262 mm
内存密度	36864 bit	36864 bit	73728 bit	36864 bit	73728 bit	36864 bit	36864 bit	36864 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	9	9	9	9	9	9	9	9
功能数量	1	1	1	1	1	1	1	1
端子数量	52	64	68	52	80	64	64	52
字数	4096 words	4096 words	8192 words	4096 words	8192 words	4096 words	4096 words	4096 words
字数代码	4000	4000	8000	4000	8000	4000	4000	4000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C	70 °C	70 °C
组织	4KX9	4KX9	8KX9	4KX9	8KX9	4KX9	4KX9	4KX9
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	LQFP	QCCJ	QCCJ	LQFP	LQFP	LQFP	QCCJ
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	CHIP CARRIER	FLATPACK, LOW PROFILE	CHIP CARRIER	CHIP CARRIER	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	FLATPACK, LOW PROFILE	CHIP CARRIER
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
座面最大高度	4.57 mm	1.6 mm	4.57 mm	4.57 mm	1.6 mm	1.6 mm	1.6 mm	4.57 mm
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN	MATTE TIN
端子形式	J BEND	GULL WING	J BEND	J BEND	GULL WING	GULL WING	GULL WING	J BEND
端子节距	1.27 mm	0.8 mm	1.27 mm	1.27 mm	0.65 mm	0.8 mm	0.8 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
宽度	19.1262 mm	14 mm	24.2062 mm	19.1262 mm	14 mm	14 mm	14 mm	19.1262 mm
Base Number Matches	1	1	1	1	1	1	-	-

7014S25JG8

7014S25JG8概述

7014S25JG8规格参数

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7014S25JG8相似产品对比

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