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70V639S10BFGI

产品描述Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208
产品类别存储   
文件大小185KB,共23页
制造商IDT (Integrated Device Technology)
标准  
下载文档 详细参数 选型对比 全文预览

70V639S10BFGI概述

Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208

70V639S10BFGI规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LFBGA,
针数208
Reach Compliance Codecompliant
ECCN代码3A991
最长访问时间10 ns
JESD-30 代码S-PBGA-B208
JESD-609代码e1
长度15 mm
内存密度2359296 bit
内存集成电路类型DUAL-PORT SRAM
内存宽度18
湿度敏感等级3
功能数量1
端子数量208
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织128KX18
封装主体材料PLASTIC/EPOXY
封装代码LFBGA
封装形状SQUARE
封装形式GRID ARRAY, LOW PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.7 mm
最大供电电压 (Vsup)3.45 V
最小供电电压 (Vsup)3.15 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度15 mm
Base Number Matches1

文档预览

下载PDF文档
HIGH-SPEED 3.3V 128K x 18
ASYNCHRONOUS DUAL-PORT
STATIC RAM
Features
IDT70V639S
Functional Block Diagram
UB
L
LB
L
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12/15ns (max.)
Dual chip enables allow for depth expansion without
external logic
IDT70V639 easily expands data bus width to 36 bits or
more using the Master/Slave select when cascading more
than one device
M/S = V
IH
for
BUSY
output flag on Master,
M/S = V
IL
for
BUSY
input on Slave
Busy and Interrupt Flags
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package.
LVTTL-compatible, single 3.3V (±150mV) power supply for
core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Available in a 128-pin Thin Quad Flatpack, 208-ball fine
pitch Ball Grid Array, and 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Green parts available, see ordering information
UB
R
LB
R
R/
W
L
B
E
0
L
B
E
1
L
B
E
1
R
B
E
0
R
R/
W
R
CE
0 L
CE
1 L
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
128K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
A
16L
A
0L
Address
Decoder
ADDR_L
ADDR_R
Address
Decoder
A
16R
A
0R
OE
L
CE
0L
CE
1L
R/W
L
BUSY
L
SEM
L
INT
L
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
OE
R
CE
0 R
CE
1 R
R/W
R
BUSY
R
M/S
SEM
R
INT
R
TDI
TDO
JTAG
TMS
TCK
TRST
5621 drw 01
NOTES:
1.
BUSY
is an input as a Slave (M/S=V
IL
) and an output when it is a Master (M/S=V
IH
).
2.
BUSY
and
INT
are non-tri-state totem-pole outputs (push-pull).
JULY 2008
DSC-5621/5
1
©2008 Integrated Device Technology, Inc.

70V639S10BFGI相似产品对比

70V639S10BFGI IDT70V639S15BCI8 IDT70V639S15PRFI8 70V639S10PRFGI 70V639S10BCGI IDT70V639S15BFI8
描述 Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, FPBGA-208 Application Specific SRAM, 128KX18, 15ns, CMOS, PBGA256 Application Specific SRAM, 128KX18, 15ns, CMOS, PQFP128 Dual-Port SRAM, 128KX18, 10ns, CMOS, PQFP128, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, TQFP-128 Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN, BGA-256 Application Specific SRAM, 128KX18, 15ns, CMOS, PBGA208
是否无铅 不含铅 含铅 含铅 不含铅 不含铅 含铅
是否Rohs认证 符合 不符合 不符合 符合 符合 不符合
Reach Compliance Code compliant not_compliant not_compliant compliant compliant not_compliant
最长访问时间 10 ns 15 ns 15 ns 10 ns 10 ns 15 ns
JESD-30 代码 S-PBGA-B208 S-PBGA-B256 R-PQFP-G128 R-PQFP-G128 S-PBGA-B256 S-PBGA-B208
JESD-609代码 e1 e0 e0 e3 e1 e0
内存密度 2359296 bit 2359296 bit 2359296 bit 2359296 bit 2359296 bit 2359296 bit
内存集成电路类型 DUAL-PORT SRAM APPLICATION SPECIFIC SRAM APPLICATION SPECIFIC SRAM DUAL-PORT SRAM DUAL-PORT SRAM APPLICATION SPECIFIC SRAM
内存宽度 18 18 18 18 18 18
端子数量 208 256 128 128 256 208
字数 131072 words 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
组织 128KX18 128KX18 128KX18 128KX18 128KX18 128KX18
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LFBGA BGA QFP LFQFP LBGA FBGA
封装形状 SQUARE SQUARE RECTANGULAR RECTANGULAR SQUARE SQUARE
封装形式 GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY FLATPACK FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE GRID ARRAY, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 225 240 260 260 225
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) TIN LEAD MATTE TIN Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn63Pb37)
端子形式 BALL BALL GULL WING GULL WING BALL BALL
端子节距 0.8 mm 1 mm 0.5 mm 0.5 mm 1 mm 0.8 mm
端子位置 BOTTOM BOTTOM QUAD QUAD BOTTOM BOTTOM
处于峰值回流温度下的最长时间 30 30 20 30 30 20
厂商名称 IDT (Integrated Device Technology) IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology)
湿度敏感等级 3 - 3 3 3 3
Base Number Matches 1 1 1 1 1 -

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