RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | LCC |
| 包装说明 | CHIP CARRIER, S-CQCC-N28 |
| 针数 | 28 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 47 mJ |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (Abs) (ID) | 4.6 A |
| 最大漏极电流 (ID) | 4.6 A |
| 最大漏源导通电阻 | 0.31 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CQCC-N28 |
| JESD-609代码 | e0 |
| 元件数量 | 4 |
| 端子数量 | 28 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 12 W |
| 最大脉冲漏极电流 (IDM) | 18.4 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | NO LEAD |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRHQ57110 | IRHQ53110 | IRHQ54110 | IRHQ58110 | |
|---|---|---|---|---|
| 描述 | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28), 100V, Quad N-CHANNEL |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 零件包装代码 | LCC | LCC | LCC | LCC |
| 包装说明 | CHIP CARRIER, S-CQCC-N28 | CHIP CARRIER, S-CQCC-N28 | CHIP CARRIER, S-CQCC-N28 | CHIP CARRIER, S-CQCC-N28 |
| 针数 | 28 | 28 | 28 | 28 |
| Reach Compliance Code | compli | unknown | compli | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | 47 mJ | 47 mJ | 47 mJ | 47 mJ |
| 配置 | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 100 V | 100 V | 100 V | 100 V |
| 最大漏极电流 (ID) | 4.6 A | 4.6 A | 4.6 A | 4.6 A |
| 最大漏源导通电阻 | 0.31 Ω | 0.31 Ω | 0.31 Ω | 0.31 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | S-CQCC-N28 | S-CQCC-N28 | S-CQCC-N28 | S-CQCC-N28 |
| 元件数量 | 4 | 4 | 4 | 4 |
| 端子数量 | 28 | 28 | 28 | 28 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 18.4 A | 18.4 A | 18.4 A | 18.4 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | - | 1 | 1 |
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