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FM25L256

产品描述SPECIALTY MEMORY CIRCUIT, PDSO8
产品类别存储   
文件大小159KB,共14页
制造商Ramtron International Corporation (Cypress Semiconductor Corporation)
官网地址http://www.cypress.com/
下载文档 详细参数 全文预览

FM25L256概述

SPECIALTY MEMORY CIRCUIT, PDSO8

专用存储器电路, PDSO8

FM25L256规格参数

参数名称属性值
功能数量1
端子数量8
最大工作温度85 Cel
最小工作温度-25 Cel
最大供电/工作电压3.6 V
最小供电/工作电压3 V
额定供电电压3.3 V
加工封装描述绿色, MS-012AA, SOIC-8
状态DISCONTINUED-UNCONFIRMED
工艺CMOS
包装形状矩形的
包装尺寸SMALL OUTLINE
表面贴装Yes
端子形式GULL WING
端子间距1.27 mm
端子位置
包装材料塑料/环氧树脂
温度等级其他
内存宽度8
组织32K × 8
存储密度262144 deg
操作模式同步
位数32768 words
位数32K
内存IC类型内存 电路

文档预览

下载PDF文档
Pre-Production
FM25L256
256Kb FRAM Serial 3V Memory – Extended Temp.
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 3.0V – 3.6V
1
µA
(typ) Standby Current
Industry Standard Configurations
Extended Temperature -25°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
“Green” Packaging Options
Description
The FM25L256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance.
FRAM also exhibits much lower power consumption
than EEPROM.
These capabilities make the FM25L256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256 provides substantial benefits to users
of serial EEPROM as a hardware drop-in
replacement. The FM25L256 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an extended temperature range of
-25°C to +85°C.
D
E
D S
N N
E G
M SI
6B
M E
25
O D
5L
C
2
E W
: FM
R E
ve
T N
ati
O R
tern
N O
Al
F
Pin Configuration
CS
1
2
3
4
8
7
6
5
VDD
SCK
SI
SO
HOLD
WP
VSS
/CS
SO
/WP
VSS
1
2
3
4
8
7
6
5
VDD
/HOLD
SCK
SI
Top View
Pin Name
/CS
/WP
/HOLD
SCK
SI
SO
VDD
VSS
Function
Chip Select
Write Protect
Hold
Serial Clock
Serial Data Input
Serial Data Output
Supply Voltage (3.0 to 3.6V)
Ground
Ordering Information
FM25L256-S
FM25L256-G
FM25L256-DG
8-pin SOIC
“Green” 8-pin SOIC
“Green” 8-pin TDFN
This is a product in the pre-production phase of development. Device
characterization is complete and Ramtron does not expect to change the
specifications. Ramtron will issue a Product Change Notice if any
specification changes are made.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
www.ramtron.com
Rev. 2.3
March 2007
Page 1 of 14

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