SBL1030CT thru SBL1045CT
Low V
F
Schottky Barrier Rectifiers
Dimensions TO-220AB
A
C(TAB)
A
C
A
C
A
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
V
RRM
V
30
35
40
45
V
RMS
V
21
24.5
28
31.5
V
DC
V
30
35
40
45
SBL1030CT
SBL1035CT
SBL1040CT
SBL1045CT
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Symbol
I
(AV)
I
FSM
V
F
I
R
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward Rectified Current
@T
C
=95
o
C
Maximum Ratings
10
125
0.55
@T
J
=25
o
C
@T
J
=100
o
C
0.5
50
250
3.0
-55 to +125
-55 to +150
Unit
A
A
V
mA
pF
o
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 5.0A DC (Note 1)
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance Per Element (Note 2)
Typical Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
C/W
o
o
C
C
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
3. Thermal Resistance Junction To Case.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low V
F
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
SBL1030CT thru SBL1045CT
Low V
F
Schottky Barrier Rectifiers
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
12
10
8
6
4
2
0
RESISTIVE OR INDUCTIVE LOAD
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
150
125
100
75
50
25
0
1
2
5
10
20
50
100
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
25
50
75
100
125
150
175
CASE TEMPERATURE , C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
1000
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS
REVERSE CURRENT ,(mA)
100
10
10
T
J
= 100 C
1.0
T
J
= 75 C
1.0
T
J
= 25 C
0.1
T
J
= 25 C
PULSE WIDTH 300ua
300us
2% Duty cycle
0.01
0
20
40
60
80
100
120
140
0.1
0.1
0.2
0.3
0.4
0.5
PERCENT OF RATED PEAK REVERSE VOLTAGE (VOLTS)
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
CAPACITANCE , (pF)
100
T
J
= 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
FPGA/CPLD
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