NCV7701
2.0 Amp H−Bridge Driver
This automotive grade H−Bridge driver provides a flexible means
for controlling loads requiring bidirectional drive currents. Bridge
outputs are protected from overcurrent at each switch and
overtemperature shutdown provides product robustness. The
NCV7701 inputs can be interfaced to a range of voltages, including
vehicle battery voltage. The product features a low quiescent current
mode, allowing unswitched connection to the power source. The
NCV7701 is produced using ON Semiconductor’s POWERSENSEt
BCD technology.
Features
http://onsemi.com
SO−20L
DW SUFFIX
CASE 751D
1
20
•
•
•
•
•
•
•
•
•
•
•
•
•
•
MARKING DIAGRAM
20
NCV7701
AWLYYWW
1
A
WL, L
YY, Y
WW, W
= Assembly Location
= Wafer Lot
= Year
= Work Week
Forward, Reverse, Brake High, Brake Low Modes
1.0 A Output Current Capability (DC)
Supply Voltage Range 7.0 V to 26 V
0.25
Ω
R
DS(ON)
per Driver @ 25°C
Sleep Mode (I
Q
< 10
µA)
Overvoltage Protection
Thermal Protection
Undervoltage Disable Function
Short Circuit Protection
Cross Conduction Protection
Synchronous Low−Side Rectification for Lower Power Dissipation
Diagnostic Output (Open Drain)
TTL/CMOS/Pull−Up to Battery Compatible Inputs
20 Lead SO Package with 8 Internally Fused Leads
PIN CONNECTIONS
1
V
BAT
NC
OUTB
GND
GND
GND
GND
FAULT
NC
NC
20
NC
NC
OUTA
GND
GND
GND
GND
EN
IN1
IN2
Typical Applications
•
DC Motors
•
Stepper Motors
•
Modulator Valves
ORDERING INFORMATION
Device
NCV7701DW
NCV7701DWR2
Package
SO−20L
SO−20L
Shipping†
37 Units/Rail
1000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 3
Publication Order Number:
NCV7701/D
NCV7701
V
BAT
EN
Voltage
Reference
200 kHz
Oscillator
Charge
Pumps
I
LIM
I
LIM
M1
IN1
Bridge
Control
IN2
M3
Gate
Drive
OUTB
OUTA
M2
Fault
Detection
•
TSD
•
OVSD
•
UVLO
M4
FAULT
Masking
Timer
I
LIM
I
LIM
GND
Figure 1. Block Diagram
MAXIMUM RATINGS*
Rating
Supply Voltage (DC) − V
BAT
(Note 1)
Logic Input Voltage (DC)
Junction Temperature Range
Storage Temperature Range
Peak Transient (1.0 ms rise time, 300 ms period, 31 V Load Dump @ V
BAT
= 14 V) (Note 1)
ESD Susceptibility (Human Body Model)
Package Thermal Resistance
Junction−to−Case, R
θJC
Junction−to−Ambient, R
θJA
Lead Temperature Soldering:
Reflow: (SMD styles only) (Note 2)
Value
−0.3 to 45
−0.3 to 12
−40 to 150
−65 to 150
45
2.0
9.0
55
230 peak
Unit
V
V
°C
°C
V
kV
°C/W
°C/W
°C
*The maximum package power dissipation must be observed.
1. External reverse−battery and transient voltage suppression (TVS) required.
2. 60 second maximum above 183°C.
http://onsemi.com
2
NCV7701
ELECTRICAL CHARACTERISTICS
(7.0 V
≤
V
BAT
≤
26 V, −40°C
≤
T
J
≤
125°C; unless otherwise specified.) Note 3.
Characteristic
General
V
BAT
Quiescent Current:
Low Quiescent
Normal Operation
EN Logic Input
Low Level Input Voltage
High Level Input Voltage
Input Bias Current
Input Leakage Current
IN1, IN2, Logic Inputs
Low Level Input Voltage
High Level Input Voltage
Input Bias Current
Input Leakage Current
IC Protection
Overvoltage Shutdown
Overvoltage Hysteresis
Undervoltage Voltage Lockout
Undervoltage Hysteresis
Thermal Shutdown
Thermal Hysteresis
Drivers OUTA, OUTB
Output High Voltage (V
H
)
Output Low Voltage (V
L
)
Current Limit
FAULT Output
Output Leakage Current
Output Low Voltage
AC Characteristics
Output Turn−On Delay
Output Turn−Off Delay
Current Limit Mask Time
−
−
−
−
−
20
5.0
5.0
40
10
10
60
µs
µs
µs
V
FAULT
= 5.0 V, Fault Absent
I
FAULT
= 0.5 mA, Fault Present
−
−
−
−
10
1.0
µA
V
V
BAT
= 14 V, I
SOURCE
= 1.0 A, V
H
= V
BAT
− OUT
X
V
BAT
= 14 V, I
SOURCE
= 1.0 A, V
L
= OUT
X
− V
GND
V
BAT
= 14 V
−
−
3.0
0.4
0.4
4.0
0.75
0.75
5.0
V
V
A
(Guaranteed by Design)
(Guaranteed by Design)
−
−
−
−
27
0.2
−
100
160
10
32
0.5
−
200
185
22.5
37
1.0
6.5
400
210
35
V
V
V
mV
°C
°C
−
−
5.0 V on Logic Input, EN = 5.0 V
0 V on Logic Input, EN = 0 V
−
2.0
5.0
−
−
−
20
−
0.8
−
40
1.0
V
V
µA
µA
EN = 5.0 V
EN = 0 V
−
−
−
2.5
15
−
−
−
50
−
0.7
−
100
1.0
V
V
µA
µA
EN = 0 V, V
BAT
≤
12.8 V
2.5 V
≤
EN
≤
V
BAT
, V
BAT
= 14 V
−
−
−
−
10
8.0
µA
mA
Test Conditions
Min
Typ
Max
Unit
3. Designed to meet these characteristics over the stated voltage and temperature ranges, though may not be 100% parametrically tested
in production.
http://onsemi.com
3
NCV7701
Table 1. H−Bridge Mode Control
EN
0
1
1
1
1
IN1
X
0
0
1
1
IN2
X
0
1
0
1
H−Bridge
Off (Sleep Mode)
Brake Low
Forward
Reverse
Brake High
OUTA
Off
Low
High
Low
High
OUTB
Off
Low
Low
High
High
Table 2. Fault Diagnostics
Fault Condition
No Faults
Undervoltage
Overvoltage
Thermal Shutdown
Current Limit
Fault Pin
High Z
Low
Low
Low
Low
H−Bridge
Normal Operation
Off
Off
Off
1 or more Drivers in
Current Limit
PACKAGE PIN DESCRIPTION
Pin No.
1
2, 9, 10, 19, 20
3
4, 5, 6, 7, 14, 15, 16, 17
8
11
12
13
18
Symbol
V
BAT
NC
OUTB
GND
FAULT
IN2
IN1
EN
OUTA
IC supply voltage.
No connection.
Bridge output.
Power ground.
Diagnostic output.
Mode control input.
Mode control input.
Chip enable.
Bridge output.
Description
Operating Description
During power up, the outputs are HI−Z regardless of the
input states. When the undervoltage lockout threshold is
exceeded, the outputs will reflect the input states. Outputs
change to HI−Z whenever an undervoltage, overvoltage or
thermal shutdown fault is detected. Normal operation will
resume when faults are resolved.
Overcurrent Protection
Current is monitored continuously in each switch of each
half bridge when the ENA input is in a high state thus
protecting each switch from faults due to short to GND,
short to V
BAT
or shorted load conditions. Only the affected
half−bridge is disabled for short to V
BAT
or short to GND
faults. A mask timer is initiated after a fault is detected and
prevents recognition of an overcurrent event until the mask
time expires. Persistence of an overcurrent condition causes
the bridge output to change to HI−Z and the FAULT output
to latch low until the next transition occurs on either the
input related to the faulted output or the ENA input is
brought low then high again. This method of protection
provides current limiting on a cycle−by−cycle basis and
helps allow a stall torque current to be ignored during motor
start. Continued overcurrent may eventually result in
activation of the thermal shutdown circuitry, thus activating
a second level of protection for the NCV7701.
http://onsemi.com
4
NCV7701
V
IGN
1
20
V
BAT
+
NC
NC
OUTA
GND
NCV7701
GND
GND
GND
EN
IN1
IN2
TVS
47
µF
NC
OUTB
GND
GND
GND
GND
FAULT
NC
NC
Controller
V
CC
Figure 2. Application Diagram
http://onsemi.com
5