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FRF501G

产品描述5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
产品类别分立半导体    二极管   
文件大小209KB,共2页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

FRF501G概述

5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

FRF501G规格参数

参数名称属性值
是否Rohs认证符合
Reach Compliance Codecompli
ECCN代码EAR99
二极管类型RECTIFIER DIODE
最大正向电压 (VF)1.5 V
湿度敏感等级1
最大非重复峰值正向电流30 A
最高工作温度150 °C
最大输出电流5 A
最大重复峰值反向电压50 V
最大反向恢复时间0.15 µs
表面贴装NO
Base Number Matches1

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FRF501G - FRF507G
Isolated 5.0 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AB
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: ITO-220AB molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@2.5A
Maximum DC Reverse Current
o
@T
C
=25 C at Rated DC Blocking Voltage
o
@ T
C
=125 C
Maximum Reverse Recovery Time (Note1)
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance ( Note 3 )
Symbol FRF FRF FRF FRF FRF FRF FRF
Units
501G 502G 503G 504G 505G 506G 507G
V
RRM
50
100
200
400
600
800 1000
V
V
RMS
35
70
140
280
420
560
700
V
V
DC
50
100
200
400
600
800 1000
V
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
5.0
30
1.5
5.0
100
150
250
140
4.0
-65 to +150
500
A
A
V
uA
uA
nS
pF
o
C/W
o
C
R
θJC
Operating and Storage Temperature Range
T
J,
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Heatsink Size 2” x 3” x 0.25” Al-Plate.
Version: A06

FRF501G相似产品对比

FRF501G FRF501G_1 FRF502G FRF503G FRF507G FRF506G FRF505G FRF504G
描述 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 5 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AB
是否Rohs认证 符合 - 符合 符合 符合 符合 符合 符合
Reach Compliance Code compli - compli compliant compli compli compliant compliant
二极管类型 RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.5 V - 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V 1.5 V
湿度敏感等级 1 - 1 1 1 1 1 1
最大非重复峰值正向电流 30 A - 30 A 30 A 30 A 30 A 30 A 30 A
最高工作温度 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 5 A - 5 A 5 A 5 A 5 A 5 A 5 A
最大重复峰值反向电压 50 V - 100 V 200 V 1000 V 800 V 600 V 400 V
最大反向恢复时间 0.15 µs - 0.15 µs 0.15 µs 0.5 µs 0.5 µs 0.25 µs 0.15 µs
表面贴装 NO - NO NO NO NO NO NO
Base Number Matches 1 - 1 1 1 1 - 1

 
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