FRA1001G - FRA1007G
10 AMPS. Glass Passivated Fast Recovery Rectifiers
TO-220AC
.185(4.70)
.175(4.44)
.412(10.5)
MAX
.113(2.87)
.103(2.62)
DIA
.154(3.91)
.148(3.74)
.27(6.86)
.23(5.84)
.594(15.1)
.587(14.9)
PIN1
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
2
.11(2.79)
.10(2.54)
.055(1.40)
.045(1.14)
Features
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
o
C /10 seconds .16”,(4.06mm) from
case.
Mounting position: Any
Weight: 2.24 grams
.205(5.20)
.195(4.95)
.025(0.64)
.014(0.35)
PIN 1
PIN 2
CASE
Dimensions in inches and (millimeters)
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Ratings and Electrical Characteristics
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
C
= 55
o
C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage @ 10A
Maximum DC Reverse Current @ T
C
=25 C
at Rated DC Blocking Voltage @ T
C
=125
o
C
Maximum Reverse Recovery Time ( Note 2 )
Typical Junction Capacitance ( Note 1 ) T
J
=
25 C
Typical Thermal Resistance ( Note 3 )
Operating and Storage Temperature Range
o
o
Symbol
FRA
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
50
35
50
FRA FRA FRA FRA FRA FRA
1001G 1002G 1003G 1004G 1005G 1006G 1007G
Units
V
V
V
A
A
V
uA
uA
nS
pF
o
C/W
o
C
100
70
100
200
140
200
400
280
400
10
150
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
150
250
60
3.0
-65 to +150
500
Cj
R
θJC
Notes:
T
J
,
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (FRA1001G THRU FRA1007G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
10
AVERAGE FORWARD CURRENT. (A)
8
40
6
Tj=125
0
C
INSTANTANEOUS REVERSE CURRENT. ( A)
4
10
Tj=75
0
C
2
4
2
1
0
0
50
100
o
150
CASE TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
0.4
0.2
Tj=25
0
C
PEAK FORWARD SURGE CURRENT. (A)
125
TJ=125
0
C
8.3ms Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
25
200
0
NUMBER OF CYCLES AT 60Hz
100
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1
2
5
10
20
50
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
0
40
20
10
250
CAPACITANCE.(pF)
200
4
2
1
150
100
0.4
50
0.2
0.1
0.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.1
0.5
1
5
10
50
100
500 1000
REVERSE VOLTAGE. (V)
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06
嵌入式系统
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