1N5402G: 产品描述3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD; 产品类别分立半导体二极管; 文件大小47KB，共2页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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1N5402G概述

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5402G规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Taiwan Semiconductor
包装说明	O-PALF-W2
Reach Compliance Code	_compli
ECCN代码	EAR99
其他特性	HIGH RELIABILITY, LOW POWER LOSS
应用	EFFICIENCY
外壳连接	ISOLATED
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	1 V
JEDEC-95代码	DO-201AD
JESD-30 代码	O-PALF-W2
湿度敏感等级	1
最大非重复峰值正向电流	125 A
元件数量	1
相数	1
端子数量	2
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	3 A
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	LONG FORM
认证状态	Not Qualified
最大重复峰值反向电压	200 V
表面贴装	NO
端子面层	Pure Tin (Sn)
端子形式	WIRE
端子位置	AXIAL

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1N5400G

THRU

1N5408G

3.0 AMPS. Glass Passivated Rectifiers

Voltage Range

50 to 1000 Volts

Current

3.0 Amperes

Features

Low forward voltage drop

High current capability

High reliability

High surge current capability

DO-201AD

Mechanical Data

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Axial leads, solderable per MIL-STD-

202, Method 208 guaranteed

Polarity: Color band denotes cathode end

High temperature soldering guaranteed:

260℃/10 seconds/.375”,(9.5mm) lead lengths

at 5 lbs.,(2.3kg) tension

Weight: 1.2 grams

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current .375”(9.5mm) Lead Length

= 75℃

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@3.0A

Maximum DC Reverse Current @ T

=25℃

at Rated DC Blocking Voltage @ T

=125℃

5400G 5401G 5402G 5404G 5406G 5407G 5408G

Units

RRM

RMS

(AV)

FSM

100

200

140

200

400

280

400

3.0

125

600

420

600

800 1000

560 700

800 1000

1.1

1.0

5.0

100

Typical Junction Capacitance ( Note 1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

STG

- 65 to + 150

Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.

2. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.

C/W

℃

- 540 -

1N5402G相似产品对比

	1N5402G	1N5400G	1N5400G_1	1N5401G	1N5404G
描述	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
应用	EFFICIENCY	EFFICIENCY	GENERAL PURPOSE	EFFICIENCY	EFFICIENCY
二极管元件材料	SILICON	SILICON	硅	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	整流二极管	RECTIFIER DIODE	RECTIFIER DIODE
最大非重复峰值正向电流	125 A	125 A	150 A	125 A	125 A
元件数量	1	1	1	1	1
相数	1	1	1	1	1
端子数量	2	2	2	2	2
最大重复峰值反向电压	200 V	50 V	50 V	100 V	400 V
端子形式	WIRE	WIRE	线	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
是否Rohs认证	符合	符合	-	符合	符合
包装说明	O-PALF-W2	GREEN, PLASTIC PACKAGE-2	-	GREEN, PLASTIC PACKAGE-2	GREEN, PLASTIC PACKAGE-2
Reach Compliance Code	_compli	_compli	-	_compli	_compli
ECCN代码	EAR99	-	-	EAR99	EAR99
其他特性	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	-	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS
外壳连接	ISOLATED	ISOLATED	-	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	-	SINGLE	SINGLE
最大正向电压 (VF)	1 V	1 V	-	1 V	1 V
JEDEC-95代码	DO-201AD	DO-201AD	-	DO-201AD	DO-201AD
JESD-30 代码	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2
湿度敏感等级	1	1	-	1	1
最高工作温度	150 °C	150 °C	-	150 °C	150 °C
最低工作温度	-65 °C	-65 °C	-	-65 °C	-65 °C
最大输出电流	3 A	3 A	-	3 A	3 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	-	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	-	LONG FORM	LONG FORM
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
表面贴装	NO	NO	-	NO	NO
端子面层	Pure Tin (Sn)	Pure Tin (Sn)	-	Pure Tin (Sn)	Pure Tin (Sn)
Base Number Matches	-	1	-	1	1

1N5402G

1N5402G在线购买

1N5402G概述

1N5402G规格参数

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