74LCX257FT
CMOS Digital Integrated Circuits Silicon Monolithic
74LCX257FT
1. Functional Description
•
Low-Voltage Quad 2-Channel Multiplexer (3-state) with 5-V Tolerant Inputs and Outputs
2. General
The 74LCX257FT is a high-performance CMOS multiplexer. Designed for use in 3.3 V systems, it achieves high-
speed operation while maintaining the CMOS low-power dissipation.
The device is designed for low-voltage (3.3 V) V
CC
applications, but it could be used to interface to 5 V supply
environment for inputs.
It is composed of four independent 2-channel multiplexers with common select and OE .
If OE is set high, the outputs are held in a high-impedance state. When SELECT is set low, "A" data inputs are
enabled. Conversely, when SELECT is high, "B" data inputs are enabled.
All inputs are equipped with protection circuits against static discharge.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature range: T
opr
= -40 to 125
Low-voltage operation: V
CC
= 1.65 to 3.6 V
High-speed operation: t
pd
= 7.0 ns (max) (V
CC
= 3.3
±
0.3 V)
Output current: |I
OH
|/I
OL
= 24 mA (min) (V
CC
= 3.0 V)
Power-down protection provided on all inputs and outputs
Pin and function compatible with the 74 series
(74LVC/ALVC/ etc.) 257 type
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP16B
Start of commercial production
©2016 Toshiba Corporation
1
2014-11
2016-09-15
Rev.2.0
74LCX257FT
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
8. Truth Table
Input
OE
H
L
L
L
L
Input
SELECT
X
L
L
H
H
Inputs
A
X
L
H
X
X
Inputs
B
X
X
X
L
H
Outputs
Y
Z
L
H
L
H
X:
Z:
Don't care
High impedance
©2016 Toshiba Corporation
2
2016-09-15
Rev.2.0
74LCX257FT
9. System Diagram
©2016 Toshiba Corporation
3
2016-09-15
Rev.2.0
74LCX257FT
10. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
Power dissipation
V
CC
/ground current
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
P
D
I
CC
/I
GND
T
stg
(Note 4)
(Note 3)
(Note 1)
(Note 2)
Note
Rating
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+ 0.5
-50
±50
±50
180
±100
-65 to 150
mA
mA
mA
mW
mA
Unit
V
V
V
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Output in OFF state.
Note 2: High or Low state. I
OUT
absolute maximum rating must be observed.
Note 3: V
OUT
< GND, V
OUT
> V
CC
Note 4: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
11. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Output current
Operating temperature
Input rise and fall times
Symbol
V
CC
(Note 1)
V
IN
V
OUT
I
OH
,I
OL
T
opr
dt/dv
(Note 6)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
Note
Rating
1.65 to 3.6
1.5 to 3.6
0 to 5.5
0 to 5.5
0 to V
CC
±24
±12
-40 to 125
0 to 10
ns/V
mA
V
V
Unit
V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 1: Data retention only.
Note 2: Output in OFF state.
Note 3: High or low state
Note 4: V
CC
= 3.0 to 3.6 V
Note 5: V
CC
= 2.7 to 3.0 V
Note 6: V
IN
= 0.8 to 2.0 V , V
CC
= 3.0 V
Note:
©2016 Toshiba Corporation
4
2016-09-15
Rev.2.0
74LCX257FT
12. Electrical Characteristics
12.1. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Symbol
V
IH
Test Condition
V
CC
(V)
1.65 to 2.3
2.3 to 2.7
2.7 to 3.6
Low-level input voltage
V
IL
1.65 to 2.3
2.3 to 2.7
2.7 to 3.6
High-level output voltage
V
OH
V
IN
= V
IH
or V
IL
I
OH
= -100
µA
I
OH
= -4 mA
I
OH
= -8 mA
I
OH
= -12 mA
I
OH
= -18 mA
I
OH
= -24 mA
Low-level output voltage
V
OL
V
IN
= V
IH
or V
IL
I
OL
= 100
µA
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 12 mA
I
OL
= 16 mA
I
OL
= 24 mA
Input leakage current
3-state output OFF-state
leakage current
Power-OFF leakage current
Quiescent supply current
Quiescent supply current
I
IN
I
OZ
I
OFF
I
CC
∆I
CC
V
IN
= 0 to 5.5 V
V
IN
= V
IH
or V
IL
V
OUT
= 0 to 5.5 V
V
IN
/V
OUT
= 5.5 V
V
IN
= V
CC
or GND
V
IN
/V
OUT
= 3.6 to 5.5 V
V
IH
= V
CC
- 0.6 V
(per 1 input)
1.65 to 3.6
1.65
2.3
2.7
3.0
3.0
1.65 to 3.6
1.65
2.3
2.7
3.0
3.0
1.65 to 3.6
1.65 to 3.6
0
1.65 to 3.6
1.65 to 3.6
2.7 to 3.6
Min
V
CC
×
0.9
1.7
2.0
V
CC
- 0.2
1.05
1.7
2.2
2.4
2.2
Max
V
CC
×
0.1
0.7
0.8
0.2
0.45
0.7
0.4
0.4
0.55
±5.0
±5.0
10.0
10.0
±10.0
500
µA
µA
µA
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
5
2016-09-15
Rev.2.0
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