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IDT70V639S15PRFG8: 产品描述Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, TQFP-128; 产品类别存储; 文件大小187KB，共23页; 制造商IDT (Integrated Device Technology); 标准

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IDT70V639S15PRFG8概述

Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, TQFP-128

IDT70V639S15PRFG8规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	LFQFP,
针数	128
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	15 ns
JESD-30 代码	R-PQFP-G128
JESD-609代码	e3
长度	20 mm
内存密度	2359296 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端子数量	128
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	128KX18
封装主体材料	PLASTIC/EPOXY
封装代码	LFQFP
封装形状	RECTANGULAR
封装形式	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
认证状态	Not Qualified
座面最大高度	1.6 mm
最大供电电压 (Vsup)	3.45 V
最小供电电压 (Vsup)	3.15 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	MATTE TIN
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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HIGH-SPEED 3.3V 128K x 18

ASYNCHRONOUS DUAL-PORT

STATIC RAM

PRELIMINARY

IDT70V639S

Features

True Dual-Port memory cells which allow simultaneous

access of the same memory location

High-speed access

– Commercial: 10/12/15ns (max.)

– Industrial: 12/15ns (max.)

Dual chip enables allow for depth expansion without

external logic

IDT70V639 easily expands data bus width to 36 bits or

more using the Master/Slave select when cascading more

than one device

M/S = V

for

BUSY

output flag on Master,

M/S = V

for

BUSY

input on Slave

Busy and Interrupt Flags

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

– Due to limited pin count, JTAG is not supported on the

128-pin TQFP package.

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 128-pin Thin Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

Functional Block Diagram

R/W

Dout0-8_L

Dout9-17_L

Dout0-8_R

Dout9-17_R

128K x 18

MEMORY

ARRAY

I/O

- I/O

17L

Din_L

Din_R

I/O

- I/O

17R

16L

Address

Decoder

ADDR_L

ADDR_R

Address

Decoder

16R

R/W

BUSY

SEM

INT

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

BUSY

M/S

SEM

INT

TDI

TDO

JTAG

TMS

TCK

TRST

5621 drw 01

NOTES:

BUSY

is an input as a Slave (M/S=V

) and an output when it is a Master (M/S=V

BUSY

and

INT

are non-tri-state totem-pole outputs (push-pull).

JUNE 2001

DSC-5621/3

IDT70V639S15PRFG8相似产品对比

	IDT70V639S15PRFG8	IDT70V639S12BFG8	IDT70V639S10BCG8	IDT70V639S15BCG8	IDT70V639S10BFG8	IDT70V639S15BFG8	IDT70V639S12PRFG8	IDT70V639S12PRFGI8	IDT70V639S12BCG8	IDT70V639S12BCGI8
描述	Dual-Port SRAM, 128KX18, 15ns, CMOS, PQFP128, TQFP-128	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA208, FINE PITCH, BGA-208	Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 10ns, CMOS, PBGA208, FINE PITCH, BGA-208	Dual-Port SRAM, 128KX18, 15ns, CMOS, PBGA208, FINE PITCH, BGA-208	Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, TQFP-128	Dual-Port SRAM, 128KX18, 12ns, CMOS, PQFP128, TQFP-128	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, BGA-256	Dual-Port SRAM, 128KX18, 12ns, CMOS, PBGA256, BGA-256
是否无铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	QFP	BGA	BGA	BGA	BGA	BGA	QFP	QFP	BGA	BGA
包装说明	LFQFP,	TFBGA,	BGA-256	BGA-256	TFBGA,	TFBGA,	LFQFP,	LFQFP,	BGA-256	BGA-256
针数	128	208	256	256	208	208	128	128	256	256
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	15 ns	12 ns	10 ns	15 ns	10 ns	15 ns	12 ns	12 ns	12 ns	12 ns
JESD-30 代码	R-PQFP-G128	S-PBGA-B208	S-PBGA-B256	S-PBGA-B256	S-PBGA-B208	S-PBGA-B208	R-PQFP-G128	R-PQFP-G128	S-PBGA-B256	S-PBGA-B256
JESD-609代码	e3	e1	e1	e1	e1	e1	e3	e3	e1	e1
长度	20 mm	15 mm	17 mm	17 mm	15 mm	15 mm	20 mm	20 mm	17 mm	17 mm
内存密度	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit	2359296 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	18	18	18	18	18	18	18	18	18
湿度敏感等级	3	3	3	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	128	208	256	256	208	208	128	128	256	256
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	85 °C	70 °C	85 °C
组织	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18	128KX18
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFQFP	TFBGA	LBGA	LBGA	TFBGA	TFBGA	LFQFP	LFQFP	LBGA	LBGA
封装形状	RECTANGULAR	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE	GRID ARRAY, LOW PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260	260	260
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.2 mm	1.5 mm	1.5 mm	1.2 mm	1.2 mm	1.6 mm	1.6 mm	1.5 mm	1.5 mm
最大供电电压 (Vsup)	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V	3.45 V
最小供电电压 (Vsup)	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V	3.15 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
端子面层	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	MATTE TIN	MATTE TIN	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式	GULL WING	BALL	BALL	BALL	BALL	BALL	GULL WING	GULL WING	BALL	BALL
端子节距	0.5 mm	0.8 mm	1 mm	1 mm	0.8 mm	0.8 mm	0.5 mm	0.5 mm	1 mm	1 mm
端子位置	QUAD	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	QUAD	QUAD	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	30	30	30	30	30	30	30	30	30	30
宽度	14 mm	15 mm	17 mm	17 mm	15 mm	15 mm	14 mm	14 mm	17 mm	17 mm
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
Base Number Matches	1	1	1	1	1	1	1	1	-	-

IDT70V639S15PRFG8

IDT70V639S15PRFG8概述

IDT70V639S15PRFG8规格参数

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IDT70V639S15PRFG8相似产品对比

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